JP5260861B2 - キャパシタ電極の製造方法と製造システムおよび記録媒体 - Google Patents
キャパシタ電極の製造方法と製造システムおよび記録媒体 Download PDFInfo
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- JP5260861B2 JP5260861B2 JP2006321680A JP2006321680A JP5260861B2 JP 5260861 B2 JP5260861 B2 JP 5260861B2 JP 2006321680 A JP2006321680 A JP 2006321680A JP 2006321680 A JP2006321680 A JP 2006321680A JP 5260861 B2 JP5260861 B2 JP 5260861B2
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- capacitor electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
Description
Oxide Etchant)やDHF(Diluted Hydro Fluoric acid)などのエッチング液を用いた湿式エッチングが一般に行われている。
Silicated Glass)膜100が成膜されており、更に、BPSG膜100には、円柱形状のストレージノードホール101が、ウェハW表面のストレージノード102に達する深さにパターン形成されている。なお、このストレージノードホール101は、ウェハWの表面にBPSG膜100を成膜させた後、フォトリソ工程等を経て形成される。
2 搬入出部
3 ロードロック室
4 反応処理装置
5 熱処理装置
6 制御コンピュータ
20 反応処理室
21 載置台
22 温調手段
50 熱処理室
51 載置台
52 温調手段
100 BPSG膜
101 ストレージノードホール
103 キャパシタ電極
C キャリア
W ウェハ
Claims (6)
- 基板表面のBPSG膜からなるシリコン酸化膜を除去してキャパシタ電極を製造するキャパシタ電極の製造方法であって、
前記基板を第1の処理温度にして、HFを含むガスを供給し、前記シリコン酸化膜と前記HFを含むガスとを化学反応させて、前記シリコン酸化膜をフルオロケイ酸からなる反応生成物に変質させる工程と、
前記基板を前記第1の処理温度よりも高い第2の処理温度にして、前記反応生成物を加熱し、塩基性ガスを供給して、前記反応生成物に変質させた前記シリコン酸化膜を除去する工程と、を有することを特徴とする、キャパシタ電極の製造方法。 - 前記キャパシタ電極がシリンダー型であることを特徴とする、請求項1に記載のキャパシタ電極の製造方法。
- 前記シリコン酸化膜を反応生成物に変質させる工程を、所定の減圧下で行うことを特徴とする、請求項1または2に記載のキャパシタ電極の製造方法。
- 前記反応生成物を加熱して除去する工程を、所定の減圧下で行うことを特徴とする、請求項1〜3のいずれかに記載のキャパシタ電極の製造方法。
- 前記塩基性ガスはアンモニアガスであることを特徴とする、請求項1〜4のいずれかに記載のキャパシタ電極の製造方法。
- 製造システムの制御コンピュータによって実行することが可能なプログラムが記録された記録媒体であって、
前記プログラムは、前記制御コンピュータによって実行されることにより、前記製造システムに、請求項1〜5のいずれかに記載のキャパシタ電極の製造方法を行わせるものであることを特徴とする、記録媒体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006321680A JP5260861B2 (ja) | 2006-11-29 | 2006-11-29 | キャパシタ電極の製造方法と製造システムおよび記録媒体 |
CN200710162501XA CN101192529B (zh) | 2006-11-29 | 2007-10-16 | 电容器电极的制造方法和制造系统 |
US11/946,289 US8124536B2 (en) | 2006-11-29 | 2007-11-28 | Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium |
TW096145144A TWI457990B (zh) | 2006-11-29 | 2007-11-28 | A manufacturing method of a capacitor electrode, a manufacturing system, and a recording medium |
KR1020070123083A KR100951733B1 (ko) | 2006-11-29 | 2007-11-29 | 캐패시터 전극의 제조 방법과 제조 시스템 및 기록 매체 |
EP07023122A EP1928011A3 (en) | 2006-11-29 | 2007-11-29 | Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006321680A JP5260861B2 (ja) | 2006-11-29 | 2006-11-29 | キャパシタ電極の製造方法と製造システムおよび記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008135632A JP2008135632A (ja) | 2008-06-12 |
JP5260861B2 true JP5260861B2 (ja) | 2013-08-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006321680A Active JP5260861B2 (ja) | 2006-11-29 | 2006-11-29 | キャパシタ電極の製造方法と製造システムおよび記録媒体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8124536B2 (ja) |
EP (1) | EP1928011A3 (ja) |
JP (1) | JP5260861B2 (ja) |
KR (1) | KR100951733B1 (ja) |
CN (1) | CN101192529B (ja) |
TW (1) | TWI457990B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US8917611B2 (en) | 2009-05-07 | 2014-12-23 | Jasper Technologies, Inc. | Core services platform for wireless voice, data and messaging network services |
JP5374039B2 (ja) * | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
JP4719910B2 (ja) | 2008-11-26 | 2011-07-06 | 国立大学法人東北大学 | 半導体装置の製造方法 |
CN102569037B (zh) * | 2011-11-29 | 2015-01-21 | 上海华力微电子有限公司 | 一种提高金属绝缘层金属电容层多次光刻重复性的方法 |
WO2015011829A1 (ja) * | 2013-07-26 | 2015-01-29 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP6059165B2 (ja) * | 2014-02-19 | 2017-01-11 | 東京エレクトロン株式会社 | エッチング方法、及びプラズマ処理装置 |
JP6230954B2 (ja) * | 2014-05-09 | 2017-11-15 | 東京エレクトロン株式会社 | エッチング方法 |
US10692730B1 (en) * | 2019-08-30 | 2020-06-23 | Mattson Technology, Inc. | Silicon oxide selective dry etch process |
JP2021180281A (ja) * | 2020-05-15 | 2021-11-18 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Family Cites Families (20)
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JP2526772B2 (ja) * | 1992-12-08 | 1996-08-21 | 日本電気株式会社 | 半導体装置の製造方法 |
US5425845A (en) * | 1993-06-09 | 1995-06-20 | Texas Instruments Incorporated | Method for selective removal of hard trench masks |
US5980770A (en) * | 1998-04-16 | 1999-11-09 | Siemens Aktiengesellschaft | Removal of post-RIE polymer on Al/Cu metal line |
JP2002261081A (ja) | 2001-03-01 | 2002-09-13 | Asm Japan Kk | 半導体ウエハのエッチング装置及び方法 |
JP3954833B2 (ja) * | 2001-10-19 | 2007-08-08 | 株式会社アルバック | バッチ式真空処理装置 |
KR100844982B1 (ko) * | 2002-06-29 | 2008-07-09 | 주식회사 하이닉스반도체 | 캐패시터의 제조 방법 |
US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
KR20040074459A (ko) * | 2003-02-19 | 2004-08-25 | 주식회사 하이닉스반도체 | 반도체 캐패시터의 저장 전극 형성방법 |
US7029536B2 (en) | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
KR100558194B1 (ko) * | 2003-10-17 | 2006-03-10 | 삼성전자주식회사 | 높은 식각 선택비를 갖는 식각 조성물, 이의 제조 방법,이를 이용한 산화막의 선택적 식각 방법 및 반도체 장치의제조 방법 |
KR100553839B1 (ko) * | 2003-11-27 | 2006-02-24 | 삼성전자주식회사 | 캐패시터와 그 제조 방법, 이를 포함하는 반도체 장치 및그 제조 방법 |
JP4495470B2 (ja) | 2004-01-13 | 2010-07-07 | 三星電子株式会社 | エッチング方法 |
KR101025323B1 (ko) * | 2004-01-13 | 2011-03-29 | 가부시키가이샤 아루박 | 에칭 장치 및 에칭 방법 |
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JP5184890B2 (ja) * | 2004-12-21 | 2013-04-17 | アプライド マテリアルズ インコーポレイテッド | 基板のための処理チャンバ |
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JP4663368B2 (ja) * | 2005-03-28 | 2011-04-06 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体 |
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2006
- 2006-11-29 JP JP2006321680A patent/JP5260861B2/ja active Active
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2007
- 2007-10-16 CN CN200710162501XA patent/CN101192529B/zh active Active
- 2007-11-28 US US11/946,289 patent/US8124536B2/en active Active
- 2007-11-28 TW TW096145144A patent/TWI457990B/zh active
- 2007-11-29 EP EP07023122A patent/EP1928011A3/en not_active Withdrawn
- 2007-11-29 KR KR1020070123083A patent/KR100951733B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100951733B1 (ko) | 2010-04-08 |
CN101192529A (zh) | 2008-06-04 |
JP2008135632A (ja) | 2008-06-12 |
TW200839854A (en) | 2008-10-01 |
KR20080048978A (ko) | 2008-06-03 |
US20080124936A1 (en) | 2008-05-29 |
EP1928011A3 (en) | 2011-08-03 |
CN101192529B (zh) | 2010-04-14 |
TWI457990B (zh) | 2014-10-21 |
EP1928011A2 (en) | 2008-06-04 |
US8124536B2 (en) | 2012-02-28 |
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