JP5184890B2 - 基板のための処理チャンバ - Google Patents
基板のための処理チャンバ Download PDFInfo
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- JP5184890B2 JP5184890B2 JP2007547030A JP2007547030A JP5184890B2 JP 5184890 B2 JP5184890 B2 JP 5184890B2 JP 2007547030 A JP2007547030 A JP 2007547030A JP 2007547030 A JP2007547030 A JP 2007547030A JP 5184890 B2 JP5184890 B2 JP 5184890B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Description
[0001]本発明の実施形態は、一般的には、半導体処理装置に関する。更に詳細には、本発明の実施形態は、半導体製造のための化学気相堆積(CVD)システム及びCVDシステムを用いたインサイチュ乾式洗浄法に関する。
[0002]基板表面が酸素に晒される時に、典型的には未変性酸化物が形成する。基板表面がエッチングの間汚染される場合には、未変性酸化物も結果として生じてしまう。未変性酸化シリコン膜は、特に金属酸化物シリコン電界効果トランジスタ(“MOSFET”)構造の処理中に、露出したシリコン含有層上に形成される。酸化シリコン膜は、電気的に絶縁し、高い電気接触抵抗を引き起こすことから、接触電極又は相互接続電気経路との界面には望ましくない。MOSFET構造において、電極や相互接続経路は、ベアシリコン上に高融点金属を堆積させるとともに層をアニールして金属シリサイド層を与えることにより形成されたシリサイド層を含む。基板と金属間の界面における未変性酸化シリコン膜は、金属シリサイドを形成する拡散化学反応を妨害することによりシリサイド層の組成均一性を減少させる。そのことにより基板歩留まりが低くなり、また電気的接触部での過熱のために欠陥割合が増加する。未変性酸化シリコン膜は、また、基板上に連続して堆積される他のCVD又はスパッタ付着層の接着を妨げ得る。
[0096]6NH4F+SiO2 → (NH4)2SiF6+H2O
[0097](NH4)2SiF6+熱 → NH3+HF+SiF4
[0098]基板表面上に薄膜が形成された後、その上に基板が支持された支持部材310を加熱された分配プレート225の密接に近接してアニール位置に上げられる。分配プレート225から放射された熱は、(NH4)2SiF6の薄膜を揮発性SiF4、NH3、HF生成物へ十分に解離又は昇華させるのに十分でなければならない。その後、これらの揮発性生成物は、上記のように真空ポンプ125によってチャンバ100から除去される。典型的には、75℃以上の温度を用いて効果的に昇華させるとともに基板から薄膜を除去する。好ましくは、100℃以上の温度、例えば、約115℃〜約200℃が用いられる。
[00150]6NH4F+SiO2 → (NH4)2SiF6+H2O
[00151](NH4)2SiF6+熱 → NH3+HF+SiF4
[00152]基板表面上に薄膜が形成された後、その上に基板が支持された支持部材710を加熱されたガス分配アセンブリ720に密接に近接してアニール位置に上げられる。ガス分配アセンブリ720から放射された熱は、(NH4)2SiF6の薄膜を揮発性SiF4、NH3、HF生成物へ十分に解離又は昇華させるのに十分でなければならない。その後、これらの揮発性生成物は、上記のように真空ポンプによってチャンバ700から除去される。
[00158]エッチング中、2sccmのNF3、10sccmのNH3、2,500sccmのアルゴンのガス混合物をチャンバへ導入した。ガス混合物のプラズマを100ワットの電力を用いて点火した。底面のパージは1,500sccmのアルゴン、エッジのパージは50sccmのアルゴンであった。チャンバ圧を約6トールで維持し、基板温度は約22℃であった。基板を120秒間エッチングした。
Claims (6)
- 基板のための処理チャンバであって、
リッドアセンブリを有するチャンバ本体と、
前記リッドアセンブリの下の前記チャンバ本体の範囲内に少なくとも部分的に配置され且つ前記リッドアセンブリの下面と前記支持アセンブリの上面との間に画成された処理ゾーン内に基板を支持するように適合された支持アセンブリと、
を備え、前記リッドアセンブリが、
拡張する内径を有する円筒形の第一電極、及び、
接地されたカップ形状の第二電極、
を備え、前記第一電極は前記第二電極内に配置され、前記第一電極と前記第二電極との間に前記処理ゾーンから離れたプラズマ形成領域を画成し、前記プラズマ形成領域は、前記プラズマ形成領域と前記処理ゾーンとの間に配置された複数のアパーチャにより、前記処理ゾーンと連通している、前記処理チャンバ。 - 前記第一電極が、高周波源、マイクロ波源、又は直流又は交流の供給源に結合される、請求項1記載のチャンバ。
- 前記第一電極が、高周波源に結合される、請求項2記載のチャンバ。
- 前記第二電極が、前記第一電極より大きい表面積を有する、請求項3記載のチャンバ。
- 前記第二電極が、前記第一電極の下にある、請求項1記載のチャンバ。
- 前記支持アセンブリを通って熱伝達媒体を流すための1以上の流体チャネルを更に含む、請求項1記載のチャンバ。
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US63789704P | 2004-12-21 | 2004-12-21 | |
US60/637,897 | 2004-12-21 | ||
US11/137,200 | 2005-05-24 | ||
US11/137,200 US20060130971A1 (en) | 2004-12-21 | 2005-05-24 | Apparatus for generating plasma by RF power |
US11/266,167 US20060051966A1 (en) | 2004-02-26 | 2005-11-03 | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US11/266,167 | 2005-11-03 | ||
PCT/US2005/046226 WO2006069085A2 (en) | 2004-12-21 | 2005-12-20 | An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
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JP5260861B2 (ja) * | 2006-11-29 | 2013-08-14 | 東京エレクトロン株式会社 | キャパシタ電極の製造方法と製造システムおよび記録媒体 |
US8642477B2 (en) | 2008-05-30 | 2014-02-04 | United Microelectronics Corp. | Method for clearing native oxide |
CN103109357B (zh) * | 2010-10-19 | 2016-08-24 | 应用材料公司 | 用于紫外线纳米固化腔室的石英喷洒器 |
JP5703000B2 (ja) * | 2010-12-01 | 2015-04-15 | 株式会社アルバック | ラジカルクリーニング方法 |
EP2815424B1 (en) | 2012-02-14 | 2017-08-16 | Entegris Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
JP2015138931A (ja) * | 2014-01-24 | 2015-07-30 | 株式会社日立ハイテクノロジーズ | 真空処理装置および真空処理方法 |
US10203604B2 (en) * | 2015-11-30 | 2019-02-12 | Applied Materials, Inc. | Method and apparatus for post exposure processing of photoresist wafers |
CN108292601A (zh) * | 2016-01-13 | 2018-07-17 | 应用材料公司 | 用于蚀刻硬件的基于氢等离子体的清洗工艺 |
US10337105B2 (en) * | 2016-01-13 | 2019-07-02 | Mks Instruments, Inc. | Method and apparatus for valve deposition cleaning and prevention by plasma discharge |
US10325790B2 (en) * | 2016-04-29 | 2019-06-18 | Applied Materials, Inc. | Methods and apparatus for correcting substrate deformity |
US10522371B2 (en) * | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
JP6742265B2 (ja) * | 2017-03-28 | 2020-08-19 | 東京エレクトロン株式会社 | 洗浄副生成物の付着抑制方法及びこれを用いた反応室内のクリーニング方法、並びに室温成膜装置 |
CN110249416B (zh) * | 2017-04-07 | 2023-09-12 | 应用材料公司 | 在基板边缘上的等离子体密度控制 |
JP6615153B2 (ja) * | 2017-06-16 | 2019-12-04 | 東京エレクトロン株式会社 | 基板処理装置、基板載置機構、および基板処理方法 |
DE202018100363U1 (de) * | 2018-01-23 | 2019-04-24 | Aixtron Se | Vorrichtung zum Verbinden eines Suszeptors mit einer Antriebswelle |
US11685994B2 (en) | 2019-09-13 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | CVD device pumping liner |
JP2021158251A (ja) * | 2020-03-27 | 2021-10-07 | 株式会社Screenホールディングス | 基板処理装置 |
KR102516340B1 (ko) * | 2020-09-08 | 2023-03-31 | 주식회사 유진테크 | 기판 처리 장치 및 기판 처리 장치의 운용 방법 |
US20230070804A1 (en) * | 2021-09-02 | 2023-03-09 | Wonik Ips Co., Ltd. | Substrate processing apparatus |
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JPH02121330A (ja) * | 1988-10-31 | 1990-05-09 | Hitachi Ltd | プラズマ処理方法及び装置 |
JPH05235520A (ja) * | 1992-02-20 | 1993-09-10 | Matsushita Electric Works Ltd | 回路用基板のプラズマ処理方法 |
EP0697467A1 (en) * | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
JP4121269B2 (ja) * | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | セルフクリーニングを実行するプラズマcvd装置及び方法 |
JP2003249490A (ja) * | 2001-12-20 | 2003-09-05 | Mitsubishi Heavy Ind Ltd | ラジカルガン |
US6921556B2 (en) * | 2002-04-12 | 2005-07-26 | Asm Japan K.K. | Method of film deposition using single-wafer-processing type CVD |
JP3838969B2 (ja) * | 2002-12-17 | 2006-10-25 | 沖電気工業株式会社 | ドライエッチング方法 |
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