TWI782975B - 蝕刻方法 - Google Patents

蝕刻方法 Download PDF

Info

Publication number
TWI782975B
TWI782975B TW107112016A TW107112016A TWI782975B TW I782975 B TWI782975 B TW I782975B TW 107112016 A TW107112016 A TW 107112016A TW 107112016 A TW107112016 A TW 107112016A TW I782975 B TWI782975 B TW I782975B
Authority
TW
Taiwan
Prior art keywords
gas
film
processed
layer
etching method
Prior art date
Application number
TW107112016A
Other languages
English (en)
Chinese (zh)
Other versions
TW201903883A (zh
Inventor
熊倉翔
田端雅弘
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201903883A publication Critical patent/TW201903883A/zh
Application granted granted Critical
Publication of TWI782975B publication Critical patent/TWI782975B/zh

Links

Images

Classifications

    • H10P50/283—
    • H10P50/242—
    • H10P14/6336—
    • H10P14/6339—
    • H10P14/6687—
    • H10P14/69215—
    • H10P14/69433—
    • H10P50/267—
    • H10P50/73—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Magnetic Heads (AREA)
TW107112016A 2017-04-14 2018-04-09 蝕刻方法 TWI782975B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-080798 2017-04-14
JP2017080798A JP6823527B2 (ja) 2017-04-14 2017-04-14 エッチング方法

Publications (2)

Publication Number Publication Date
TW201903883A TW201903883A (zh) 2019-01-16
TWI782975B true TWI782975B (zh) 2022-11-11

Family

ID=63790267

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107112016A TWI782975B (zh) 2017-04-14 2018-04-09 蝕刻方法

Country Status (5)

Country Link
US (1) US10269578B2 (enExample)
JP (1) JP6823527B2 (enExample)
KR (1) KR102562634B1 (enExample)
CN (1) CN108735598B (enExample)
TW (1) TWI782975B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US12027375B2 (en) * 2019-02-14 2024-07-02 Lam Research Corporation Selective etch using a sacrificial mask
JP7277225B2 (ja) * 2019-04-08 2023-05-18 東京エレクトロン株式会社 エッチング方法、及び、プラズマ処理装置
JP7398915B2 (ja) * 2019-10-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110059599A1 (en) * 2009-09-10 2011-03-10 Lockheed Martin Corporation Graphene Nanoelectric Device Fabrication
US20110244688A1 (en) * 2010-03-31 2011-10-06 Kabushiki Kaisha Toshiba Method of producing mask
US9059043B1 (en) * 2014-02-11 2015-06-16 International Business Machines Corporation Fin field effect transistor with self-aligned source/drain regions
US9595451B1 (en) * 2015-10-19 2017-03-14 Applied Materials, Inc. Highly selective etching methods for etching dielectric materials
US20170076957A1 (en) * 2015-09-11 2017-03-16 Lam Research Corporation Systems and methods for performing in-situ deposition of sidewall image transfer spacers

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318576A (ja) * 1993-04-30 1994-11-15 Oki Electric Ind Co Ltd ドライエッチング方法
JP3259529B2 (ja) * 1994-07-11 2002-02-25 ソニー株式会社 選択エッチング方法
JP4123428B2 (ja) 2001-11-30 2008-07-23 東京エレクトロン株式会社 エッチング方法
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
JP2012018989A (ja) * 2010-07-06 2012-01-26 Elpida Memory Inc 半導体装置の製造方法
WO2012008179A1 (ja) * 2010-07-12 2012-01-19 住友精密工業株式会社 エッチング方法
CN103311092B (zh) * 2012-03-12 2015-08-05 中芯国际集成电路制造(上海)有限公司 沟槽的刻蚀方法
US9093389B2 (en) * 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
KR102233577B1 (ko) * 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
US9633867B2 (en) * 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
KR101702869B1 (ko) * 2015-09-10 2017-02-06 주식회사 케이씨텍 원자층 식각장치
US10115601B2 (en) * 2016-02-03 2018-10-30 Tokyo Electron Limited Selective film formation for raised and recessed features using deposition and etching processes
JP6812284B2 (ja) 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110059599A1 (en) * 2009-09-10 2011-03-10 Lockheed Martin Corporation Graphene Nanoelectric Device Fabrication
US20110244688A1 (en) * 2010-03-31 2011-10-06 Kabushiki Kaisha Toshiba Method of producing mask
US9059043B1 (en) * 2014-02-11 2015-06-16 International Business Machines Corporation Fin field effect transistor with self-aligned source/drain regions
US20170076957A1 (en) * 2015-09-11 2017-03-16 Lam Research Corporation Systems and methods for performing in-situ deposition of sidewall image transfer spacers
US9595451B1 (en) * 2015-10-19 2017-03-14 Applied Materials, Inc. Highly selective etching methods for etching dielectric materials

Also Published As

Publication number Publication date
TW201903883A (zh) 2019-01-16
KR20180116150A (ko) 2018-10-24
US10269578B2 (en) 2019-04-23
JP6823527B2 (ja) 2021-02-03
CN108735598B (zh) 2023-01-06
KR102562634B1 (ko) 2023-08-02
US20180301346A1 (en) 2018-10-18
CN108735598A (zh) 2018-11-02
JP2018182103A (ja) 2018-11-15

Similar Documents

Publication Publication Date Title
TWI782975B (zh) 蝕刻方法
KR102774973B1 (ko) 기판 처리 장치
TWI682461B (zh) 被處理體之處理方法
TWI805162B (zh) 被處理體之處理裝置
CN105489485A (zh) 处理被处理体的方法
JP6788400B2 (ja) 被処理体を処理する方法
TW201818465A (zh) 被處理體之處理方法
TWI820613B (zh) 成膜方法
JP7398915B2 (ja) 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置
TWI759348B (zh) 被處理體之處理方法