JP2018182104A5 - - Google Patents

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Publication number
JP2018182104A5
JP2018182104A5 JP2017080800A JP2017080800A JP2018182104A5 JP 2018182104 A5 JP2018182104 A5 JP 2018182104A5 JP 2017080800 A JP2017080800 A JP 2017080800A JP 2017080800 A JP2017080800 A JP 2017080800A JP 2018182104 A5 JP2018182104 A5 JP 2018182104A5
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JP
Japan
Prior art keywords
gas
film
processed
space
plasma
Prior art date
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Application number
JP2017080800A
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English (en)
Japanese (ja)
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JP2018182104A (ja
JP6767302B2 (ja
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Priority claimed from JP2017080800A external-priority patent/JP6767302B2/ja
Priority to JP2017080800A priority Critical patent/JP6767302B2/ja
Priority to TW107112019A priority patent/TWI760472B/zh
Priority to TW111106913A priority patent/TWI820613B/zh
Priority to KR1020180042947A priority patent/KR102472335B1/ko
Priority to CN201810329353.4A priority patent/CN108735597B/zh
Priority to US15/952,359 priority patent/US10672605B2/en
Publication of JP2018182104A publication Critical patent/JP2018182104A/ja
Publication of JP2018182104A5 publication Critical patent/JP2018182104A5/ja
Priority to US15/930,637 priority patent/US11574806B2/en
Publication of JP6767302B2 publication Critical patent/JP6767302B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2017080800A 2017-04-14 2017-04-14 成膜方法 Active JP6767302B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2017080800A JP6767302B2 (ja) 2017-04-14 2017-04-14 成膜方法
TW107112019A TWI760472B (zh) 2017-04-14 2018-04-09 成膜方法
TW111106913A TWI820613B (zh) 2017-04-14 2018-04-09 成膜方法
KR1020180042947A KR102472335B1 (ko) 2017-04-14 2018-04-12 성막 방법
CN201810329353.4A CN108735597B (zh) 2017-04-14 2018-04-13 成膜方法
US15/952,359 US10672605B2 (en) 2017-04-14 2018-04-13 Film forming method
US15/930,637 US11574806B2 (en) 2017-04-14 2020-05-13 Film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017080800A JP6767302B2 (ja) 2017-04-14 2017-04-14 成膜方法

Publications (3)

Publication Number Publication Date
JP2018182104A JP2018182104A (ja) 2018-11-15
JP2018182104A5 true JP2018182104A5 (enExample) 2019-12-26
JP6767302B2 JP6767302B2 (ja) 2020-10-14

Family

ID=63790890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017080800A Active JP6767302B2 (ja) 2017-04-14 2017-04-14 成膜方法

Country Status (5)

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US (2) US10672605B2 (enExample)
JP (1) JP6767302B2 (enExample)
KR (1) KR102472335B1 (enExample)
CN (1) CN108735597B (enExample)
TW (2) TWI760472B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
KR102794843B1 (ko) * 2019-11-18 2025-04-10 캐논 톡키 가부시키가이샤 성막장치, 이를 사용한 성막방법 및 전자디바이스 제조방법
KR102793505B1 (ko) * 2019-11-19 2025-04-08 캐논 톡키 가부시키가이샤 냉각재킷, 이를 포함하는 성막장치, 이를 사용한 성막방법 및 전자디바이스 제조방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318576A (ja) * 1993-04-30 1994-11-15 Oki Electric Ind Co Ltd ドライエッチング方法
JP3259529B2 (ja) * 1994-07-11 2002-02-25 ソニー株式会社 選択エッチング方法
JP3288246B2 (ja) * 1997-03-24 2002-06-04 日本電気株式会社 半導体装置および半導体装置の製造方法
US6885055B2 (en) * 2003-02-04 2005-04-26 Lee Jong-Ho Double-gate FinFET device and fabricating method thereof
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7282766B2 (en) * 2005-01-17 2007-10-16 Fujitsu Limited Fin-type semiconductor device with low contact resistance
JP2012018989A (ja) * 2010-07-06 2012-01-26 Elpida Memory Inc 半導体装置の製造方法
WO2012008179A1 (ja) * 2010-07-12 2012-01-19 住友精密工業株式会社 エッチング方法
WO2014018273A1 (en) * 2012-07-25 2014-01-30 Power Integrations, Inc. Method of forming a tapered oxide
CN104217947B (zh) * 2013-05-31 2018-11-06 中国科学院微电子研究所 半导体制造方法
US9378971B1 (en) * 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
JP6366454B2 (ja) * 2014-10-07 2018-08-01 東京エレクトロン株式会社 被処理体を処理する方法
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
JP6590333B2 (ja) 2015-02-26 2019-10-16 学校法人東京理科大学 Ｄｎａ結合ドメイン組込み用ベクターおよびそのセット、融合タンパク質コーディングベクターおよびそのセットならびにその製造方法、デスティネーションベクター、植物細胞用発現ベクターおよびその製造方法、植物細胞用発現ベクター作製用キット、形質転換方法、ならびにゲノム編集方法
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US9502238B2 (en) * 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
JP6462477B2 (ja) * 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
US10199388B2 (en) * 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide

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