JP2018182104A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2018182104A JP2018182104A JP2017080800A JP2017080800A JP2018182104A JP 2018182104 A JP2018182104 A JP 2018182104A JP 2017080800 A JP2017080800 A JP 2017080800A JP 2017080800 A JP2017080800 A JP 2017080800A JP 2018182104 A JP2018182104 A JP 2018182104A
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- 238000000151 deposition Methods 0.000 title description 7
- 238000000034 method Methods 0.000 claims abstract description 147
- 238000005530 etching Methods 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims description 312
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 35
- 238000010926 purge Methods 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 125000003277 amino group Chemical group 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 13
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 12
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 3
- 239000010408 film Substances 0.000 description 192
- 239000010410 layer Substances 0.000 description 109
- 239000000463 material Substances 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 12
- 239000003507 refrigerant Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 239000010703 silicon Substances 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 101001090150 Equus caballus Sperm histone P2a Proteins 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 101001016600 Equus caballus Sperm histone P2b Proteins 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (16)
- 被処理体に対する成膜方法であって、該被処理体は支持基体と被処理層とを備え、該被処理層は該支持基体の主面に設けられ複数の凸領域を備え、該複数の凸領域のそれぞれは該主面の上方に延びており、該複数の凸領域のそれぞれの端面は該主面上から見て露出しており、当該方法は、
前記複数の凸領域のそれぞれの前記端面に膜を形成する第1の工程と、
前記第1の工程によって形成された前記膜を異方性エッチングし、一または複数の前記端面を選択的に露出させる第2の工程と、
を備え、
前記膜は、第1の膜および第2の膜を含み、
前記第1の工程は、
前記第1の膜をコンフォーマルに形成する第3の工程と、
前記第1の膜上に第2の膜を形成する第4の工程と、
を備え、
前記第4の工程は、
前記主面から離れる程に、膜厚が増加するように、前記第2の膜を形成する、
被処理体に対する成膜方法。 - 前記第3の工程は、
前記被処理体が配置される空間に第1のガスを供給する第5の工程と、
前記第5の工程の実行後に前記被処理体が配置される空間をパージする第6の工程と、
前記第6の工程の実行後に前記被処理体が配置される空間に第2のガスのプラズマを生成する第7の工程と、
前記第7の工程の実行後に前記被処理体が配置される空間をパージする第8の工程と、
を含む第1のシーケンスを繰り返し実行して前記第1の膜をコンフォーマルに形成し、
前記第5の工程は、前記第1のガスのプラズマを生成しない、
請求項1に記載の方法。 - 前記第1のガスは、有機含有のアミノシラン系ガスを含み、
前記第2のガスは、酸素原子を含む、
請求項2に記載の方法。 - 前記第1のガスは、モノアミノシランを含む、
請求項3に記載の方法。 - 前記第1のガスに含まれるアミノシラン系ガスは、1〜3個のケイ素原子を有するアミノシランを含む、
請求項3に記載の方法。 - 前記第1のガスに含まれるアミノシラン系ガスは、1〜3個のアミノ基を有するアミノシランを含む、
請求項3または請求項5に記載の方法。 - 前記第4の工程は、
前記被処理体が配置される空間に第3のガスのプラズマを生成する、
請求項1〜6の何れか一項に記載の方法。 - 前記第3のガスは、シリコン原子を含み、且つ、塩素原子または水素原子を含む、
請求項7に記載の方法。 - 前記第3のガスは、SiCl4ガスまたはSiH4ガスを含む、
請求項8に記載の方法。 - 前記第4の工程は、
前記被処理体が配置される空間に第4のガスを供給する第9の工程と、
前記第9の工程の実行後に前記被処理体が配置される空間をパージする第10の工程と、
前記第10の工程の実行後に前記被処理体が配置される空間に第5のガスのプラズマを生成する第11の工程と、
前記第11の工程の実行後に前記被処理体が配置される空間をパージする第12の工程と、
を含む第2のシーケンスを繰り返し実行して前記第2の膜を形成し、
前記第9の工程は、前記第4のガスのプラズマを生成しない、
請求項1〜6の何れか一項に記載の方法。 - 前記第4のガスは、シリコン原子および塩素原子を含み、
前記第5のガスは、酸素原子を含む、
請求項10に記載の方法。 - 前記第4のガスは、SiCl4ガスおよびArガスを含む混合ガスを含む、
請求項11に記載の方法。 - 前記第2の工程は、
前記被処理体が配置される空間に第6のガスのプラズマを生成し、該第6のガスのプラズマにバイアス電力を印加し、
請求項1〜12の何れか一項に記載の方法。 - 前記第6のガスは、フルオロカーボン系ガスを含む、
請求項13に記載の方法。 - 前記第2の工程の実行後に、前記被処理層に対しエッチングを行う第13の工程を備える、
請求項1〜14の何れか一項に記載の方法。 - 前記被処理層は、シリコン窒化物を含み、
前記膜は、シリコン酸化物を含む、
請求項1〜15の何れか一項に記載の方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318576A (ja) * | 1993-04-30 | 1994-11-15 | Oki Electric Ind Co Ltd | ドライエッチング方法 |
JPH0831797A (ja) * | 1994-07-11 | 1996-02-02 | Sony Corp | 選択エッチング方法 |
WO2012008409A1 (ja) * | 2010-07-12 | 2012-01-19 | 住友精密工業株式会社 | エッチング方法 |
JP2012018989A (ja) * | 2010-07-06 | 2012-01-26 | Elpida Memory Inc | 半導体装置の製造方法 |
CN104217947A (zh) * | 2013-05-31 | 2014-12-17 | 中国科学院微电子研究所 | 半导体制造方法 |
JP2016027594A (ja) * | 2014-07-01 | 2016-02-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
JP2016131238A (ja) * | 2015-01-12 | 2016-07-21 | ラム リサーチ コーポレーションLam Research Corporation | 原子スケールのald(原子層堆積)プロセスとale(原子層エッチング)プロセスとの統合 |
JP2016216817A (ja) * | 2015-03-26 | 2016-12-22 | ラム リサーチ コーポレーションLam Research Corporation | 断続的な再修復プラズマを用い、aldによる酸化ケイ素表面コーティングを使用したラジカル再結合の最少化 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3288246B2 (ja) * | 1997-03-24 | 2002-06-04 | 日本電気株式会社 | 半導体装置および半導体装置の製造方法 |
US6885055B2 (en) * | 2003-02-04 | 2005-04-26 | Lee Jong-Ho | Double-gate FinFET device and fabricating method thereof |
US7344996B1 (en) | 2005-06-22 | 2008-03-18 | Novellus Systems, Inc. | Helium-based etch process in deposition-etch-deposition gap fill |
US7282766B2 (en) * | 2005-01-17 | 2007-10-16 | Fujitsu Limited | Fin-type semiconductor device with low contact resistance |
CN104488084B (zh) * | 2012-07-25 | 2017-08-04 | 电力集成公司 | 形成锥形氧化物的方法 |
US9378971B1 (en) | 2014-12-04 | 2016-06-28 | Lam Research Corporation | Technique to deposit sidewall passivation for high aspect ratio cylinder etch |
JP6366454B2 (ja) * | 2014-10-07 | 2018-08-01 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
JP6504827B2 (ja) * | 2015-01-16 | 2019-04-24 | 東京エレクトロン株式会社 | エッチング方法 |
JP6590333B2 (ja) | 2015-02-26 | 2019-10-16 | 学校法人東京理科大学 | Dna結合ドメイン組込み用ベクターおよびそのセット、融合タンパク質コーディングベクターおよびそのセットならびにその製造方法、デスティネーションベクター、植物細胞用発現ベクターおよびその製造方法、植物細胞用発現ベクター作製用キット、形質転換方法、ならびにゲノム編集方法 |
US9502238B2 (en) * | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
JP6462477B2 (ja) * | 2015-04-27 | 2019-01-30 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
US10199388B2 (en) | 2015-08-27 | 2019-02-05 | Applied Mateerials, Inc. | VNAND tensile thick TEOS oxide |
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- 2017-04-14 JP JP2017080800A patent/JP6767302B2/ja active Active
-
2018
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318576A (ja) * | 1993-04-30 | 1994-11-15 | Oki Electric Ind Co Ltd | ドライエッチング方法 |
JPH0831797A (ja) * | 1994-07-11 | 1996-02-02 | Sony Corp | 選択エッチング方法 |
JP2012018989A (ja) * | 2010-07-06 | 2012-01-26 | Elpida Memory Inc | 半導体装置の製造方法 |
WO2012008409A1 (ja) * | 2010-07-12 | 2012-01-19 | 住友精密工業株式会社 | エッチング方法 |
CN104217947A (zh) * | 2013-05-31 | 2014-12-17 | 中国科学院微电子研究所 | 半导体制造方法 |
JP2016027594A (ja) * | 2014-07-01 | 2016-02-18 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
JP2016131238A (ja) * | 2015-01-12 | 2016-07-21 | ラム リサーチ コーポレーションLam Research Corporation | 原子スケールのald(原子層堆積)プロセスとale(原子層エッチング)プロセスとの統合 |
JP2016216817A (ja) * | 2015-03-26 | 2016-12-22 | ラム リサーチ コーポレーションLam Research Corporation | 断続的な再修復プラズマを用い、aldによる酸化ケイ素表面コーティングを使用したラジカル再結合の最少化 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021080559A (ja) * | 2019-11-18 | 2021-05-27 | キヤノントッキ株式会社 | 成膜装置、これを用いた成膜方法及び電子デバイスの製造方法 |
JP7119042B2 (ja) | 2019-11-18 | 2022-08-16 | キヤノントッキ株式会社 | 成膜装置、これを用いた成膜方法及び電子デバイスの製造方法 |
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