JP7434272B2 - 3dnandエッチング - Google Patents
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- JP7434272B2 JP7434272B2 JP2021503162A JP2021503162A JP7434272B2 JP 7434272 B2 JP7434272 B2 JP 7434272B2 JP 2021503162 A JP2021503162 A JP 2021503162A JP 2021503162 A JP2021503162 A JP 2021503162A JP 7434272 B2 JP7434272 B2 JP 7434272B2
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- 238000005530 etching Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 54
- 239000012528 membrane Substances 0.000 claims description 26
- 229910052796 boron Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000004380 ashing Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 description 21
- 239000000463 material Substances 0.000 description 17
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 239000002243 precursor Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229940126062 Compound A Drugs 0.000 description 3
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3105—After-treatment
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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Description
これらの開口は、約1nmから約100nmの範囲内の幅を有する。側壁と底部とを有する実質的に均一な幅の間隙を形成するために、膜積層体は、ハードマスクを通して、第2の厚さの深さまでエッチングされる。第2の厚さは第1の厚さよりも薄い。原子層堆積によって、間隙の側壁及び底部に、実質的に共形のライナが堆積される。共形ライナはホウ素及び炭素を含む。間隙の底部から、ライナがエッチングされる。間隙の深さを伸ばすために、膜積層体は、ライナに対して第3の厚さの深さまで選択的にエッチングされる。ライナは、蒸気雰囲気下における約500°C以上の温度でのアニーリングと、約300°Cから約400 °Cの範囲内の温度での酸素プラズマ灰化とを含むプロセスによって、除去される。
Claims (14)
- 膜積層体をエッチングする方法であって、
第1の厚さの膜積層体が形成された基板を提供することと、
側壁及び底部を有する実質的に均一な幅の間隙を形成するために、前記膜積層体を第2の厚さの深さまでエッチングすることであって、前記第2の厚さが前記第1の厚さよりも薄い、エッチングすることと、
前記間隙の前記側壁及び前記底部にライナを堆積させることと、
前記間隙の前記底部から前記ライナをエッチングすることと、
前記間隙の深さを伸ばすために、前記膜積層体を、ライナに対して第3の厚さの深さまで選択的にエッチングすることと、
前記ライナを約500°C以上の温度における、水蒸気を含む雰囲気中でのアニーリングを含むプロセスによって除去することと、
を含む、方法。 - 交互になった複数の層の厚さが約200Åから約300Åの範囲内である、請求項1に記載の方法。
- エッチングの前に、前記膜積層体上にパターニングされたハードマスクを形成することを更に含む、請求項1に記載の方法。
- 前記パターニングされたハードマスクの開口が、前記膜積層体のエッチングされるべき部分を露出させる、請求項3に記載の方法。
- 前記開口が、約10nmから約100nmの範囲内の幅を有する、請求項4に記載の方法。
- 前記ライナがホウ素を含む、請求項1に記載の方法。
- 前記ライナがB、BN、BC、又はBCNのうちの一又は複数を含む、請求項6に記載の方法。
- 前記ライナが、約10Åから約50Åの範囲内の厚さを有する、請求項1に記載の方法。
- 前記ライナが炭素を含み、前記ライナは、約300°Cから約400 °Cの範囲内の温度で実施される酸素プラズマ灰化を更に含むプロセスによって除去される、請求項1に記載の方法。
- 各エッチングプロセスが実質的に指向性である、請求項1に記載の方法。
- 膜積層体をエッチングする方法であって、
第1の厚さの膜積層体が形成された基板を提供することであって、前記膜積層体が、交互になった酸化物と窒化物の層を備える、基板を提供することと、
前記膜積層体上にパターニングされたハードマスクを形成することと、
側壁及び底部を有する実質的に均一な幅の間隙を形成するために、前記ハードマスクを通して、前記膜積層体を第2の厚さの深さまでエッチングすることであって、前記第2の厚さが前記第1の厚さよりも薄い、エッチングすることと、
前記間隙の前記側壁及び前記底部にライナを堆積させることであって、共形の前記ライナがホウ素を含む、ライナを堆積させることと、
前記間隙の前記底部から前記ライナをエッチングすることと、
前記間隙の深さを伸ばすために、前記膜積層体を、ライナに対して第3の厚さの深さまで選択的にエッチングすることと、
前記ライナを除去するために、水蒸気雰囲気下で前記基板のアニーリングを実施することと、
を含む、方法。 - 前記間隙の前記実質的に均一な幅が、約10nmから約100nmの範囲内である、請求項11に記載の方法。
- 前記ライナが、約10Åから約50Åの範囲内の厚さを有する、請求項11に記載の方法。
- 膜積層体をエッチングする方法であって、
約200Åから約300Åの範囲内の第1の厚さの膜積層体が形成された基板を提供することであって、前記膜積層体が、交互になった酸化物と窒化物の層を備える、基板を提供することと、
前記膜積層体上に、前記膜積層体を露出させる開口を有するパターニングされたハードマスクを形成することであって、前記開口が、約10nmから約100nmの範囲内の幅を有する、パターニングされたハードマスクを形成することと、
側壁及び底部を有する実質的に均一な幅の間隙を形成するために、前記ハードマスクを通して、前記膜積層体を第2の厚さの深さまでエッチングすることであって、前記第2の厚さが前記第1の厚さよりも薄い、エッチングすることと、
前記間隙の前記側壁及び前記底部にライナを堆積させることであって、共形の前記ライナがホウ素及び炭素を含む、ライナを堆積させることと、
前記間隙の前記底部から前記ライナをエッチングすることと、
前記間隙の深さを伸ばすために、前記膜積層体を、ライナに対して第3の厚さの深さまで選択的にエッチングすることと、
前記ライナを、
約500°C以上の温度において、水蒸気雰囲気下でアニーリングを実施すること、及び
約300°Cから約400 °Cの範囲内の温度で酸素プラズマ灰化を実施すること、を含む、プロセスによって除去することと、
を含む、方法。
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