JP2013026265A5 - - Google Patents

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Publication number
JP2013026265A5
JP2013026265A5 JP2011156533A JP2011156533A JP2013026265A5 JP 2013026265 A5 JP2013026265 A5 JP 2013026265A5 JP 2011156533 A JP2011156533 A JP 2011156533A JP 2011156533 A JP2011156533 A JP 2011156533A JP 2013026265 A5 JP2013026265 A5 JP 2013026265A5
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JP
Japan
Prior art keywords
plasma processing
semiconductor substrate
active species
plasma
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011156533A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013026265A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011156533A priority Critical patent/JP2013026265A/ja
Priority claimed from JP2011156533A external-priority patent/JP2013026265A/ja
Priority to TW101121198A priority patent/TW201304002A/zh
Priority to CN2012102293826A priority patent/CN102881549A/zh
Priority to US13/543,796 priority patent/US10074517B2/en
Publication of JP2013026265A publication Critical patent/JP2013026265A/ja
Publication of JP2013026265A5 publication Critical patent/JP2013026265A5/ja
Abandoned legal-status Critical Current

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JP2011156533A 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法 Abandoned JP2013026265A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011156533A JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
TW101121198A TW201304002A (zh) 2011-07-15 2012-06-13 電漿處理方法、電漿處理裝置及半導體元件製造方法
CN2012102293826A CN102881549A (zh) 2011-07-15 2012-07-03 等离子体处理方法、处理装置及半导体装置的制造方法
US13/543,796 US10074517B2 (en) 2011-07-15 2012-07-07 Plasma treatment method, plasma treatment apparatus, and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011156533A JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2013026265A JP2013026265A (ja) 2013-02-04
JP2013026265A5 true JP2013026265A5 (enExample) 2014-08-28

Family

ID=47482835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011156533A Abandoned JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法

Country Status (4)

Country Link
US (1) US10074517B2 (enExample)
JP (1) JP2013026265A (enExample)
CN (1) CN102881549A (enExample)
TW (1) TW201304002A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9059092B2 (en) * 2013-09-17 2015-06-16 Taiwan Semiconductor Manufacturing Company Limited Chemical dielectric formation for semiconductor device fabrication
US9728445B2 (en) * 2014-01-22 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming conducting via and damascene structure
AU2017336002B2 (en) 2016-09-30 2022-09-08 Gen-Probe Incorporated Compositions on plasma-treated surfaces

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US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
KR100311487B1 (ko) * 1997-12-16 2001-11-15 김영환 산화막식각방법
JP2000009037A (ja) * 1998-06-18 2000-01-11 Fujitsu Ltd 排気装置及び排気方法
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KR100372996B1 (ko) * 1998-12-28 2003-02-25 아사히 가세이 마이크로시스템 가부시끼가이샤 컨택트 홀의 형성 방법
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