JP2013026265A - プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法 - Google Patents

プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法 Download PDF

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Publication number
JP2013026265A
JP2013026265A JP2011156533A JP2011156533A JP2013026265A JP 2013026265 A JP2013026265 A JP 2013026265A JP 2011156533 A JP2011156533 A JP 2011156533A JP 2011156533 A JP2011156533 A JP 2011156533A JP 2013026265 A JP2013026265 A JP 2013026265A
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JP
Japan
Prior art keywords
semiconductor substrate
plasma processing
plasma
active species
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011156533A
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English (en)
Japanese (ja)
Other versions
JP2013026265A5 (enExample
Inventor
Nobuyuki Kuboi
信行 久保井
Masanaga Fukazawa
正永 深沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011156533A priority Critical patent/JP2013026265A/ja
Priority to TW101121198A priority patent/TW201304002A/zh
Priority to CN2012102293826A priority patent/CN102881549A/zh
Priority to US13/543,796 priority patent/US10074517B2/en
Publication of JP2013026265A publication Critical patent/JP2013026265A/ja
Publication of JP2013026265A5 publication Critical patent/JP2013026265A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2011156533A 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法 Abandoned JP2013026265A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011156533A JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
TW101121198A TW201304002A (zh) 2011-07-15 2012-06-13 電漿處理方法、電漿處理裝置及半導體元件製造方法
CN2012102293826A CN102881549A (zh) 2011-07-15 2012-07-03 等离子体处理方法、处理装置及半导体装置的制造方法
US13/543,796 US10074517B2 (en) 2011-07-15 2012-07-07 Plasma treatment method, plasma treatment apparatus, and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011156533A JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2013026265A true JP2013026265A (ja) 2013-02-04
JP2013026265A5 JP2013026265A5 (enExample) 2014-08-28

Family

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Family Applications (1)

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JP2011156533A Abandoned JP2013026265A (ja) 2011-07-15 2011-07-15 プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法

Country Status (4)

Country Link
US (1) US10074517B2 (enExample)
JP (1) JP2013026265A (enExample)
CN (1) CN102881549A (enExample)
TW (1) TW201304002A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9059092B2 (en) * 2013-09-17 2015-06-16 Taiwan Semiconductor Manufacturing Company Limited Chemical dielectric formation for semiconductor device fabrication
US9728445B2 (en) * 2014-01-22 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming conducting via and damascene structure
US10829810B2 (en) 2016-09-30 2020-11-10 Gen-Probe Incorporated Compositions on plasma-treated surfaces

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989147A (en) * 1958-03-03 1961-06-20 Koppers Co Inc Hcn removal
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
DE4116840A1 (de) * 1991-05-23 1992-11-26 Degussa Verfahren zur abtrennung von cyanwasserstoff aus gasen und abgasen
JP2601208B2 (ja) * 1994-07-26 1997-04-16 ソニー株式会社 半導体基体の処理方法
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US5888591A (en) * 1996-05-06 1999-03-30 Massachusetts Institute Of Technology Chemical vapor deposition of fluorocarbon polymer thin films
US5679214A (en) * 1996-06-14 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd Method of maintaining a strong endpoint detection signal for RIE processes, via use of an insitu dry clean procedure
JP3160205B2 (ja) * 1996-09-02 2001-04-25 科学技術振興事業団 半導体装置の製造方法およびその製造装置
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
KR100311487B1 (ko) * 1997-12-16 2001-11-15 김영환 산화막식각방법
JP2000009037A (ja) * 1998-06-18 2000-01-11 Fujitsu Ltd 排気装置及び排気方法
US6613681B1 (en) * 1998-08-28 2003-09-02 Micron Technology, Inc. Method of removing etch residues
US6284149B1 (en) * 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
TW434816B (en) * 1998-12-28 2001-05-16 Asahi Chemical Micro Syst Method for forming contact hole
SE9903242D0 (sv) * 1999-09-13 1999-09-13 Acreo Ab A semiconductor device
US6793849B1 (en) * 2000-10-09 2004-09-21 The University Of Chicago N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
US6776851B1 (en) * 2001-07-11 2004-08-17 Lam Research Corporation In-situ cleaning of a polymer coated plasma processing chamber
US7465362B2 (en) * 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US6897154B2 (en) * 2002-06-14 2005-05-24 Applied Materials Inc Selective etching of low-k dielectrics
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
JP3757213B2 (ja) * 2003-03-18 2006-03-22 富士通株式会社 半導体装置の製造方法
JP2005033038A (ja) 2003-07-07 2005-02-03 Japan Science & Technology Agency 半導体装置及びその製造方法、並びに処理装置
US7351663B1 (en) * 2004-06-25 2008-04-01 Cypress Semiconductor Corporation Removing whisker defects
US7361930B2 (en) * 2005-03-21 2008-04-22 Agilent Technologies, Inc. Method for forming a multiple layer passivation film and a device incorporating the same
US20070207275A1 (en) * 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7556970B2 (en) * 2006-03-27 2009-07-07 Tokyo Electron Limited Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
JP2008000729A (ja) 2006-06-26 2008-01-10 Osaka Univ 廃液処理装置および廃液処理方法
US7642193B2 (en) * 2006-08-07 2010-01-05 Tokyo Electron Limited Method of treating a mask layer prior to performing an etching process
US7977244B2 (en) * 2006-12-18 2011-07-12 United Microelectronics Corp. Semiconductor manufacturing process
US7622390B2 (en) * 2007-06-15 2009-11-24 Tokyo Electron Limited Method for treating a dielectric film to reduce damage
CN101740333B (zh) * 2008-11-13 2011-10-05 中芯国际集成电路制造(北京)有限公司 灰化处理方法
US8962454B2 (en) * 2010-11-04 2015-02-24 Tokyo Electron Limited Method of depositing dielectric films using microwave plasma

Also Published As

Publication number Publication date
US10074517B2 (en) 2018-09-11
CN102881549A (zh) 2013-01-16
TW201304002A (zh) 2013-01-16
US20130017672A1 (en) 2013-01-17

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