JP2013120810A5 - - Google Patents

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Publication number
JP2013120810A5
JP2013120810A5 JP2011267454A JP2011267454A JP2013120810A5 JP 2013120810 A5 JP2013120810 A5 JP 2013120810A5 JP 2011267454 A JP2011267454 A JP 2011267454A JP 2011267454 A JP2011267454 A JP 2011267454A JP 2013120810 A5 JP2013120810 A5 JP 2013120810A5
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JP
Japan
Prior art keywords
plasma
gas
plasma processing
processing method
cleaning
Prior art date
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Application number
JP2011267454A
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English (en)
Japanese (ja)
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JP5783890B2 (ja
JP2013120810A (ja
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Application filed filed Critical
Priority to JP2011267454A priority Critical patent/JP5783890B2/ja
Priority claimed from JP2011267454A external-priority patent/JP5783890B2/ja
Priority to KR1020120007301A priority patent/KR101266053B1/ko
Priority to TW101104031A priority patent/TWI457971B/zh
Priority to US13/399,030 priority patent/US8591752B2/en
Publication of JP2013120810A publication Critical patent/JP2013120810A/ja
Publication of JP2013120810A5 publication Critical patent/JP2013120810A5/ja
Application granted granted Critical
Publication of JP5783890B2 publication Critical patent/JP5783890B2/ja
Active legal-status Critical Current
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JP2011267454A 2011-12-07 2011-12-07 プラズマ処理方法 Active JP5783890B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011267454A JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法
KR1020120007301A KR101266053B1 (ko) 2011-12-07 2012-01-25 플라즈마 처리 방법
TW101104031A TWI457971B (zh) 2011-12-07 2012-02-08 Plasma processing method
US13/399,030 US8591752B2 (en) 2011-12-07 2012-02-17 Plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011267454A JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2013120810A JP2013120810A (ja) 2013-06-17
JP2013120810A5 true JP2013120810A5 (enExample) 2014-10-09
JP5783890B2 JP5783890B2 (ja) 2015-09-24

Family

ID=48571028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011267454A Active JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法

Country Status (4)

Country Link
US (1) US8591752B2 (enExample)
JP (1) JP5783890B2 (enExample)
KR (1) KR101266053B1 (enExample)
TW (1) TWI457971B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5887366B2 (ja) * 2013-03-26 2016-03-16 東京エレクトロン株式会社 遷移金属を含む膜をエッチングする方法
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) * 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10453925B2 (en) 2016-01-29 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth methods and structures thereof
JP6745199B2 (ja) * 2016-06-10 2020-08-26 東京エレクトロン株式会社 銅層をエッチングする方法
WO2017213193A1 (ja) * 2016-06-10 2017-12-14 東京エレクトロン株式会社 銅層をエッチングする方法
JP7241627B2 (ja) * 2019-07-05 2023-03-17 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
CN110491759A (zh) * 2019-08-21 2019-11-22 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统
TWI850909B (zh) * 2022-03-18 2024-08-01 日商國際電氣股份有限公司 氣體清潔方法、半導體裝置之製造方法、基板處理方法、程式及基板處理裝置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
US6878419B2 (en) * 2001-12-14 2005-04-12 3M Innovative Properties Co. Plasma treatment of porous materials
JP3630666B2 (ja) * 2002-02-15 2005-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR20030085879A (ko) * 2002-05-02 2003-11-07 삼성전자주식회사 반도체소자 제조용 건식식각장치의 세정방법
US20040200498A1 (en) * 2003-04-08 2004-10-14 Applied Materials, Inc. Method and apparatus for cleaning a substrate processing chamber
TWI249789B (en) * 2004-04-23 2006-02-21 United Microelectronics Corp Two-step stripping method for removing via photoresist during the fabrication of partial-via dual damascene structures
JP4418300B2 (ja) * 2004-05-25 2010-02-17 株式会社日立製作所 記録媒体作製方法とこれを用いた記録媒体及び情報記録再生装置
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
WO2009008659A2 (en) * 2007-07-11 2009-01-15 Sosul Co., Ltd. Plasma etching apparatus and method of etching wafer
JPWO2010084909A1 (ja) * 2009-01-21 2012-07-19 キヤノンアネルバ株式会社 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置
US20100304504A1 (en) * 2009-05-27 2010-12-02 Canon Anelva Corporation Process and apparatus for fabricating magnetic device
KR101630234B1 (ko) * 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
JP2010168663A (ja) * 2010-03-26 2010-08-05 Canon Anelva Corp プラズマ処理装置
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法

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