JP6227483B2 - プラズマ処理方法 - Google Patents
プラズマ処理方法 Download PDFInfo
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- JP6227483B2 JP6227483B2 JP2014111876A JP2014111876A JP6227483B2 JP 6227483 B2 JP6227483 B2 JP 6227483B2 JP 2014111876 A JP2014111876 A JP 2014111876A JP 2014111876 A JP2014111876 A JP 2014111876A JP 6227483 B2 JP6227483 B2 JP 6227483B2
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- 238000003672 processing method Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 59
- 238000004140 cleaning Methods 0.000 claims description 19
- 238000001020 plasma etching Methods 0.000 claims description 19
- 230000005291 magnetic effect Effects 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 230000001939 inductive effect Effects 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 59
- 238000005530 etching Methods 0.000 description 34
- 239000007789 gas Substances 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000007795 chemical reaction product Substances 0.000 description 16
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 11
- 239000000395 magnesium oxide Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910019236 CoFeB Inorganic materials 0.000 description 10
- 239000000696 magnetic material Substances 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
Description
102 誘導結合アンテナ
103 ファラデーシールド
104 ガス供給装置
105 サセプタ
106 試料台
107 直流電圧電源
108 第一の高周波電源
109 ウィンドウ
110 試料
111 電極カバー
112 処理室内壁
113 第二の高周波電源
114 排気装置
115 タンタル
116 上部コバルト鉄ボロン
117 酸化マグネシウム
118 シリコン基板
119 堆積膜
120 プラズマ
121 反応生成物
122 下部コバルト鉄ボロン
Claims (5)
- 試料がプラズマ処理される処理室と、前記処理室の上部を気密に封止する誘電体窓と、前記誘電体窓の上方に配置された誘導結合アンテナと、前記誘導結合アンテナに高周波電力を供給する高周波電源と、前記誘導結合アンテナと前記誘電体窓の間に配置されたファラデーシールドとを備えるプラズマ処理装置を用いて磁性膜をプラズマエッチングするプラズマ処理方法において、
前記磁性膜をプラズマエッチングした後、前記ファラデーシールドに高周波電圧を印加しながら行われるプラズマ処理によって前記誘電体窓を構成する材料を含む堆積膜を、前記プラズマエッチングされた磁性膜に形成することを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記磁性膜のプラズマエッチング後から前記プラズマエッチングされた磁性膜に前記堆積膜を形成するまでの間に前記処理室内をプラズマクリーニングすることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記プラズマエッチングされた磁性膜への堆積膜形成後、前記処理室から前記試料を搬出して前記処理室内をプラズマクリーニングすることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記磁性膜のプラズマエッチングは、前記ファラデーシールドに高周波電圧を印加しながら行われ、
前記プラズマエッチングされた磁性膜に前記堆積膜を形成する時のファラデーシールドに印加する高周波電圧は、前記磁性膜のプラズマエッチング時のファラデーシールドに印加する高周波電圧より高いことを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記誘電体窓は、アルミナからなることを特徴とするプラズマ処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014111876A JP6227483B2 (ja) | 2014-05-30 | 2014-05-30 | プラズマ処理方法 |
TW103123136A TWI544545B (zh) | 2014-05-30 | 2014-07-04 | Plasma processing method |
KR1020140097288A KR101636428B1 (ko) | 2014-05-30 | 2014-07-30 | 플라즈마 처리 방법 |
US14/447,614 US9281470B2 (en) | 2014-05-30 | 2014-07-31 | Plasma processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014111876A JP6227483B2 (ja) | 2014-05-30 | 2014-05-30 | プラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015226032A JP2015226032A (ja) | 2015-12-14 |
JP6227483B2 true JP6227483B2 (ja) | 2017-11-08 |
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JP2014111876A Active JP6227483B2 (ja) | 2014-05-30 | 2014-05-30 | プラズマ処理方法 |
Country Status (4)
Country | Link |
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US (1) | US9281470B2 (ja) |
JP (1) | JP6227483B2 (ja) |
KR (1) | KR101636428B1 (ja) |
TW (1) | TWI544545B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6499980B2 (ja) * | 2016-01-04 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945756A (ja) | 1995-07-26 | 1997-02-14 | Hitachi Ltd | 半導体製造装置および製造方法 |
JP2764027B2 (ja) | 1996-01-29 | 1998-06-11 | 株式会社日立製作所 | 試料処理方法及び装置 |
JP3630666B2 (ja) | 2002-02-15 | 2005-03-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP2013051227A (ja) * | 2011-08-30 | 2013-03-14 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
JP5783890B2 (ja) * | 2011-12-07 | 2015-09-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP5883772B2 (ja) * | 2012-11-27 | 2016-03-15 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP5919183B2 (ja) * | 2012-12-17 | 2016-05-18 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
JP2015018885A (ja) * | 2013-07-10 | 2015-01-29 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
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2014
- 2014-05-30 JP JP2014111876A patent/JP6227483B2/ja active Active
- 2014-07-04 TW TW103123136A patent/TWI544545B/zh active
- 2014-07-30 KR KR1020140097288A patent/KR101636428B1/ko active IP Right Grant
- 2014-07-31 US US14/447,614 patent/US9281470B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101636428B1 (ko) | 2016-07-05 |
TW201545231A (zh) | 2015-12-01 |
US9281470B2 (en) | 2016-03-08 |
TWI544545B (zh) | 2016-08-01 |
JP2015226032A (ja) | 2015-12-14 |
KR20150137936A (ko) | 2015-12-09 |
US20150349245A1 (en) | 2015-12-03 |
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