JP2013157601A5 - - Google Patents
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- Publication number
- JP2013157601A5 JP2013157601A5 JP2013004130A JP2013004130A JP2013157601A5 JP 2013157601 A5 JP2013157601 A5 JP 2013157601A5 JP 2013004130 A JP2013004130 A JP 2013004130A JP 2013004130 A JP2013004130 A JP 2013004130A JP 2013157601 A5 JP2013157601 A5 JP 2013157601A5
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- focused ion
- carbonaceous material
- directing
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000010884 ion-beam technique Methods 0.000 claims 25
- 238000000034 method Methods 0.000 claims 20
- 239000003575 carbonaceous material Substances 0.000 claims 15
- 239000007789 gas Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 8
- 238000003801 milling Methods 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- 239000004642 Polyimide Substances 0.000 claims 4
- 229920001721 polyimide Polymers 0.000 claims 4
- 229910052724 xenon Inorganic materials 0.000 claims 2
- -1 xenon ions Chemical class 0.000 claims 2
- 238000010292 electrical insulation Methods 0.000 claims 1
- 230000003993 interaction Effects 0.000 claims 1
- 238000001659 ion-beam spectroscopy Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261593281P | 2012-01-31 | 2012-01-31 | |
| US61/593,281 | 2012-01-31 | ||
| US13/717,272 US9443697B2 (en) | 2012-01-31 | 2012-12-17 | Low energy ion beam etch |
| US13/717,272 | 2012-12-17 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013157601A JP2013157601A (ja) | 2013-08-15 |
| JP2013157601A5 true JP2013157601A5 (enExample) | 2016-02-18 |
| JP6199564B2 JP6199564B2 (ja) | 2017-09-20 |
Family
ID=47749634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013004130A Active JP6199564B2 (ja) | 2012-01-31 | 2013-01-13 | 低エネルギー・イオン・ビーム・エッチング |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9443697B2 (enExample) |
| EP (1) | EP2624284B1 (enExample) |
| JP (1) | JP6199564B2 (enExample) |
| CN (1) | CN103227110B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10023955B2 (en) | 2012-08-31 | 2018-07-17 | Fei Company | Seed layer laser-induced deposition |
| EP2787523B1 (en) | 2013-04-03 | 2016-02-10 | Fei Company | Low energy ion milling or deposition |
| US9064811B2 (en) | 2013-05-28 | 2015-06-23 | Fei Company | Precursor for planar deprocessing of semiconductor devices using a focused ion beam |
| US9123506B2 (en) | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
| DE102014014572B4 (de) * | 2014-09-30 | 2023-08-17 | Carl Zeiss Microscopy Gmbh | Verfahren zum Strukturieren eines Objekts mit Hilfe eines Partikelstrahlgeräts |
| US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
| US10347463B2 (en) * | 2016-12-09 | 2019-07-09 | Fei Company | Enhanced charged particle beam processes for carbon removal |
| US10546719B2 (en) | 2017-06-02 | 2020-01-28 | Fei Company | Face-on, gas-assisted etching for plan-view lamellae preparation |
| CN108446415B (zh) * | 2017-12-22 | 2021-08-06 | 北京工业大学 | 一种适用于涂层粒子复合材料考虑几何随机分布的鲁棒设计方法 |
| CN110006934A (zh) * | 2017-12-28 | 2019-07-12 | Fei 公司 | 通过等离子体聚焦离子束处理生物低温样品的方法、装置和系统 |
| WO2019143474A1 (en) * | 2018-01-18 | 2019-07-25 | Applied Materials, Inc. | Etching apparatus and methods |
| US10930514B2 (en) * | 2018-06-11 | 2021-02-23 | Fei Company | Method and apparatus for the planarization of surfaces |
| WO2020150814A1 (en) | 2019-01-22 | 2020-07-30 | Techinsights Inc. | Ion beam delayering system and method, and endpoint monitoring system and method therefor |
| US11257683B2 (en) * | 2019-06-21 | 2022-02-22 | Fei Company | Perimeter trench formation and delineation etch delayering |
| CN111883555B (zh) * | 2020-08-31 | 2021-07-20 | 长江存储科技有限责任公司 | 一种集成电路修复方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63220525A (ja) * | 1987-03-09 | 1988-09-13 | Sumitomo Electric Ind Ltd | ダイヤモンド半導体のエツチング方法 |
| JPH0513319A (ja) * | 1991-06-28 | 1993-01-22 | Toshiba Corp | パターン形成方法 |
| US5958799A (en) * | 1995-04-13 | 1999-09-28 | North Carolina State University | Method for water vapor enhanced charged-particle-beam machining |
| JP2992626B2 (ja) * | 1995-07-18 | 1999-12-20 | 工業技術院長 | イオンビームによる表面処理方法及びその装置 |
| US6319884B2 (en) | 1998-06-16 | 2001-11-20 | International Business Machines Corporation | Method for removal of cured polyimide and other polymers |
| US6069079A (en) * | 1998-09-04 | 2000-05-30 | Advanced Micro Devices, Inc. | Exposure of desired node in a multi-layer integrated circuit using FIB and RIE |
| US6268608B1 (en) | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
| JP3123647B2 (ja) * | 1998-10-12 | 2001-01-15 | 日本電気株式会社 | 液晶配向膜の配向処理方法およびその装置 |
| JP2004537758A (ja) * | 2001-07-27 | 2004-12-16 | エフ・イ−・アイ・カンパニー | 電子ビーム処理 |
| JP3828514B2 (ja) * | 2003-06-30 | 2006-10-04 | Ｔｄｋ株式会社 | ドライエッチング方法及び情報記録媒体の製造方法 |
| US7670956B2 (en) * | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
| US7732241B2 (en) * | 2005-11-30 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Microstructure and manufacturing method thereof and microelectromechanical system |
| US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
| US7867910B2 (en) * | 2008-06-10 | 2011-01-11 | International Business Machines Corporation | Method of accessing semiconductor circuits from the backside using ion-beam and gas-etch |
| JP2010165626A (ja) * | 2009-01-19 | 2010-07-29 | Toyota Motor Corp | 電解質膜およびその製造方法 |
| US8778804B2 (en) | 2009-01-30 | 2014-07-15 | Fei Company | High selectivity, low damage electron-beam delineation etch |
-
2012
- 2012-12-17 US US13/717,272 patent/US9443697B2/en active Active
-
2013
- 2013-01-13 JP JP2013004130A patent/JP6199564B2/ja active Active
- 2013-01-30 EP EP13153160.0A patent/EP2624284B1/en active Active
- 2013-01-30 CN CN201310035562.5A patent/CN103227110B/zh active Active
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