JP6199564B2 - 低エネルギー・イオン・ビーム・エッチング - Google Patents

低エネルギー・イオン・ビーム・エッチング Download PDF

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JP6199564B2
JP6199564B2 JP2013004130A JP2013004130A JP6199564B2 JP 6199564 B2 JP6199564 B2 JP 6199564B2 JP 2013004130 A JP2013004130 A JP 2013004130A JP 2013004130 A JP2013004130 A JP 2013004130A JP 6199564 B2 JP6199564 B2 JP 6199564B2
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Prior art keywords
ion beam
focused ion
polyimide
etching
gas
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JP2013004130A
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English (en)
Japanese (ja)
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JP2013157601A (ja
JP2013157601A5 (enExample
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チャド・ルー
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
JP2013004130A 2012-01-31 2013-01-13 低エネルギー・イオン・ビーム・エッチング Active JP6199564B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261593281P 2012-01-31 2012-01-31
US61/593,281 2012-01-31
US13/717,272 US9443697B2 (en) 2012-01-31 2012-12-17 Low energy ion beam etch
US13/717,272 2012-12-17

Publications (3)

Publication Number Publication Date
JP2013157601A JP2013157601A (ja) 2013-08-15
JP2013157601A5 JP2013157601A5 (enExample) 2016-02-18
JP6199564B2 true JP6199564B2 (ja) 2017-09-20

Family

ID=47749634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013004130A Active JP6199564B2 (ja) 2012-01-31 2013-01-13 低エネルギー・イオン・ビーム・エッチング

Country Status (4)

Country Link
US (1) US9443697B2 (enExample)
EP (1) EP2624284B1 (enExample)
JP (1) JP6199564B2 (enExample)
CN (1) CN103227110B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10023955B2 (en) 2012-08-31 2018-07-17 Fei Company Seed layer laser-induced deposition
EP2787523B1 (en) 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
US9064811B2 (en) 2013-05-28 2015-06-23 Fei Company Precursor for planar deprocessing of semiconductor devices using a focused ion beam
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
DE102014014572B4 (de) * 2014-09-30 2023-08-17 Carl Zeiss Microscopy Gmbh Verfahren zum Strukturieren eines Objekts mit Hilfe eines Partikelstrahlgeräts
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
US10347463B2 (en) * 2016-12-09 2019-07-09 Fei Company Enhanced charged particle beam processes for carbon removal
US10546719B2 (en) 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
CN108446415B (zh) * 2017-12-22 2021-08-06 北京工业大学 一种适用于涂层粒子复合材料考虑几何随机分布的鲁棒设计方法
CN110006934A (zh) * 2017-12-28 2019-07-12 Fei 公司 通过等离子体聚焦离子束处理生物低温样品的方法、装置和系统
WO2019143474A1 (en) * 2018-01-18 2019-07-25 Applied Materials, Inc. Etching apparatus and methods
US10930514B2 (en) * 2018-06-11 2021-02-23 Fei Company Method and apparatus for the planarization of surfaces
WO2020150814A1 (en) 2019-01-22 2020-07-30 Techinsights Inc. Ion beam delayering system and method, and endpoint monitoring system and method therefor
US11257683B2 (en) * 2019-06-21 2022-02-22 Fei Company Perimeter trench formation and delineation etch delayering
CN111883555B (zh) * 2020-08-31 2021-07-20 长江存储科技有限责任公司 一种集成电路修复方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63220525A (ja) * 1987-03-09 1988-09-13 Sumitomo Electric Ind Ltd ダイヤモンド半導体のエツチング方法
JPH0513319A (ja) * 1991-06-28 1993-01-22 Toshiba Corp パターン形成方法
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
JP2992626B2 (ja) * 1995-07-18 1999-12-20 工業技術院長 イオンビームによる表面処理方法及びその装置
US6319884B2 (en) 1998-06-16 2001-11-20 International Business Machines Corporation Method for removal of cured polyimide and other polymers
US6069079A (en) * 1998-09-04 2000-05-30 Advanced Micro Devices, Inc. Exposure of desired node in a multi-layer integrated circuit using FIB and RIE
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
JP3123647B2 (ja) * 1998-10-12 2001-01-15 日本電気株式会社 液晶配向膜の配向処理方法およびその装置
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP3828514B2 (ja) * 2003-06-30 2006-10-04 Ｔｄｋ株式会社 ドライエッチング方法及び情報記録媒体の製造方法
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
US7732241B2 (en) * 2005-11-30 2010-06-08 Semiconductor Energy Labortory Co., Ltd. Microstructure and manufacturing method thereof and microelectromechanical system
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
US7867910B2 (en) * 2008-06-10 2011-01-11 International Business Machines Corporation Method of accessing semiconductor circuits from the backside using ion-beam and gas-etch
JP2010165626A (ja) * 2009-01-19 2010-07-29 Toyota Motor Corp 電解質膜およびその製造方法
US8778804B2 (en) 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch

Also Published As

Publication number Publication date
CN103227110B (zh) 2018-09-11
US20130248356A1 (en) 2013-09-26
JP2013157601A (ja) 2013-08-15
EP2624284A3 (en) 2014-04-16
EP2624284A2 (en) 2013-08-07
CN103227110A (zh) 2013-07-31
EP2624284B1 (en) 2016-05-25
US9443697B2 (en) 2016-09-13

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