CN103227110B - 低能量离子束蚀刻 - Google Patents

低能量离子束蚀刻 Download PDF

Info

Publication number
CN103227110B
CN103227110B CN201310035562.5A CN201310035562A CN103227110B CN 103227110 B CN103227110 B CN 103227110B CN 201310035562 A CN201310035562 A CN 201310035562A CN 103227110 B CN103227110 B CN 103227110B
Authority
CN
China
Prior art keywords
ion beam
focused ion
etch
polyimide
assist gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310035562.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN103227110A (zh
Inventor
C.吕埃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FEI Co
Original Assignee
FEI Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FEI Co filed Critical FEI Co
Publication of CN103227110A publication Critical patent/CN103227110A/zh
Application granted granted Critical
Publication of CN103227110B publication Critical patent/CN103227110B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
CN201310035562.5A 2012-01-31 2013-01-30 低能量离子束蚀刻 Active CN103227110B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201261593281P 2012-01-31 2012-01-31
US61/593,281 2012-01-31
US61/593281 2012-01-31
US13/717,272 US9443697B2 (en) 2012-01-31 2012-12-17 Low energy ion beam etch
US13/717272 2012-12-17
US13/717,272 2012-12-17

Publications (2)

Publication Number Publication Date
CN103227110A CN103227110A (zh) 2013-07-31
CN103227110B true CN103227110B (zh) 2018-09-11

Family

ID=47749634

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310035562.5A Active CN103227110B (zh) 2012-01-31 2013-01-30 低能量离子束蚀刻

Country Status (4)

Country Link
US (1) US9443697B2 (enExample)
EP (1) EP2624284B1 (enExample)
JP (1) JP6199564B2 (enExample)
CN (1) CN103227110B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10023955B2 (en) 2012-08-31 2018-07-17 Fei Company Seed layer laser-induced deposition
EP2787523B1 (en) 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
US9064811B2 (en) 2013-05-28 2015-06-23 Fei Company Precursor for planar deprocessing of semiconductor devices using a focused ion beam
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
DE102014014572B4 (de) * 2014-09-30 2023-08-17 Carl Zeiss Microscopy Gmbh Verfahren zum Strukturieren eines Objekts mit Hilfe eines Partikelstrahlgeräts
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
US10347463B2 (en) 2016-12-09 2019-07-09 Fei Company Enhanced charged particle beam processes for carbon removal
US10546719B2 (en) 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
CN108446415B (zh) * 2017-12-22 2021-08-06 北京工业大学 一种适用于涂层粒子复合材料考虑几何随机分布的鲁棒设计方法
CN110006934A (zh) * 2017-12-28 2019-07-12 Fei 公司 通过等离子体聚焦离子束处理生物低温样品的方法、装置和系统
WO2019143474A1 (en) 2018-01-18 2019-07-25 Applied Materials, Inc. Etching apparatus and methods
US10930514B2 (en) * 2018-06-11 2021-02-23 Fei Company Method and apparatus for the planarization of surfaces
US20220122805A1 (en) 2019-01-22 2022-04-21 Techinsights Inc. Ion beam delayering system and method, and endpoint monitoring system and method therefor
KR102613856B1 (ko) * 2019-06-21 2023-12-14 에프이아이 컴파니 둘레 트렌치 형성 및 윤곽 에칭 층 제거
CN111883555B (zh) * 2020-08-31 2021-07-20 长江存储科技有限责任公司 一种集成电路修复方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US6069079A (en) * 1998-09-04 2000-05-30 Advanced Micro Devices, Inc. Exposure of desired node in a multi-layer integrated circuit using FIB and RIE
CN1974373A (zh) * 2005-11-30 2007-06-06 株式会社半导体能源研究所 微结构、其制造方法、以及微电子机械系统

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63220525A (ja) * 1987-03-09 1988-09-13 Sumitomo Electric Ind Ltd ダイヤモンド半導体のエツチング方法
JPH0513319A (ja) * 1991-06-28 1993-01-22 Toshiba Corp パターン形成方法
JP2992626B2 (ja) * 1995-07-18 1999-12-20 工業技術院長 イオンビームによる表面処理方法及びその装置
US6319884B2 (en) 1998-06-16 2001-11-20 International Business Machines Corporation Method for removal of cured polyimide and other polymers
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
JP3123647B2 (ja) * 1998-10-12 2001-01-15 日本電気株式会社 液晶配向膜の配向処理方法およびその装置
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP3828514B2 (ja) * 2003-06-30 2006-10-04 Ｔｄｋ株式会社 ドライエッチング方法及び情報記録媒体の製造方法
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
US7867910B2 (en) * 2008-06-10 2011-01-11 International Business Machines Corporation Method of accessing semiconductor circuits from the backside using ion-beam and gas-etch
JP2010165626A (ja) * 2009-01-19 2010-07-29 Toyota Motor Corp 電解質膜およびその製造方法
US8778804B2 (en) 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958799A (en) * 1995-04-13 1999-09-28 North Carolina State University Method for water vapor enhanced charged-particle-beam machining
US6069079A (en) * 1998-09-04 2000-05-30 Advanced Micro Devices, Inc. Exposure of desired node in a multi-layer integrated circuit using FIB and RIE
CN1974373A (zh) * 2005-11-30 2007-06-06 株式会社半导体能源研究所 微结构、其制造方法、以及微电子机械系统

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Ion Beam Assisted Etching of a Fluorinated Polyimide in order to Insert it in an Electro-Optical System";B.LUCAS etl;《SYNTHETIC METALS》;19990601;第102卷(第1-3期);1423-1424 *
"ion-beam-assisted etching of diamond";N.N.Efremow etl;《JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B》;19850101;第3卷(第1期);416-418 *

Also Published As

Publication number Publication date
EP2624284A3 (en) 2014-04-16
EP2624284A2 (en) 2013-08-07
US20130248356A1 (en) 2013-09-26
JP2013157601A (ja) 2013-08-15
EP2624284B1 (en) 2016-05-25
JP6199564B2 (ja) 2017-09-20
CN103227110A (zh) 2013-07-31
US9443697B2 (en) 2016-09-13

Similar Documents

Publication Publication Date Title
CN103227110B (zh) 低能量离子束蚀刻
JP7342165B2 (ja) 改良された材料付着法および集束イオン・ビーム・システム
US9279752B2 (en) Method for preparing thin samples for TEM imaging
US9111720B2 (en) Method for preparing samples for imaging
US11062879B2 (en) Face-on, gas-assisted etching for plan-view lamellae preparation
CN105008891B (zh) 用于变更蚀刻速率的离子注入
EP2808885B1 (en) Precursor for planar deprocessing of semiconductor devices using a focused ion beam
US8822921B2 (en) Method for preparing samples for imaging
EP2749863A2 (en) Method for preparing samples for imaging
US8455822B2 (en) Navigation and sample processing using an ion source containing both low-mass and high-mass species
KR102705854B1 (ko) 반도체 소자의 분석 시스템 및 방법
KR20210116266A (ko) 후면 평면도 라멜라 제조를 위한 방법 및 시스템
CN100399530C (zh) 分析方法
DiBattista et al. Role of Advanced Circuit Edit for First Silicon Debug
Scrymgeour et al. Advancing the Understanding of Manufacturing Tools for Hardware Security

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant