JP2013510442A5 - - Google Patents

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Publication number
JP2013510442A5
JP2013510442A5 JP2012537938A JP2012537938A JP2013510442A5 JP 2013510442 A5 JP2013510442 A5 JP 2013510442A5 JP 2012537938 A JP2012537938 A JP 2012537938A JP 2012537938 A JP2012537938 A JP 2012537938A JP 2013510442 A5 JP2013510442 A5 JP 2013510442A5
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JP
Japan
Prior art keywords
semiconductor
vacuum chamber
etching
cleaning
reactive
Prior art date
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Application number
JP2012537938A
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English (en)
Japanese (ja)
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JP5723377B2 (ja
JP2013510442A (ja
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Priority claimed from PCT/US2010/055096 external-priority patent/WO2011056783A2/en
Publication of JP2013510442A publication Critical patent/JP2013510442A/ja
Publication of JP2013510442A5 publication Critical patent/JP2013510442A5/ja
Application granted granted Critical
Publication of JP5723377B2 publication Critical patent/JP5723377B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012537938A 2009-11-09 2010-11-02 半導体のためのエッチングプロセス Expired - Fee Related JP5723377B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09
PCT/US2010/055096 WO2011056783A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Publications (3)

Publication Number Publication Date
JP2013510442A JP2013510442A (ja) 2013-03-21
JP2013510442A5 true JP2013510442A5 (enExample) 2013-08-29
JP5723377B2 JP5723377B2 (ja) 2015-05-27

Family

ID=43970710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012537938A Expired - Fee Related JP5723377B2 (ja) 2009-11-09 2010-11-02 半導体のためのエッチングプロセス

Country Status (7)

Country Link
US (1) US8765611B2 (enExample)
EP (1) EP2499663A2 (enExample)
JP (1) JP5723377B2 (enExample)
KR (1) KR20120095411A (enExample)
CN (1) CN102893378A (enExample)
TW (1) TW201135832A (enExample)
WO (1) WO2011056783A2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US9515223B2 (en) 2012-08-21 2016-12-06 Oji Holdings Corporation Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween
WO2014051909A1 (en) * 2012-09-25 2014-04-03 Applied Materials, Inc. Chamber clean with in gas heating source
CN103901516B (zh) * 2012-12-26 2016-06-15 清华大学 光栅的制备方法
US8941145B2 (en) * 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (ja) 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
KR102666776B1 (ko) * 2019-05-10 2024-05-21 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판
EP4060076A4 (en) * 2019-11-12 2023-01-25 Showa Denko K.K. Adhered substance removing method and film-forming method
CN113823992B (zh) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 半导体器件制造方法及半导体器件
CN115343788B (zh) * 2022-08-18 2024-03-15 上海交通大学 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜
WO2025153009A1 (en) * 2024-01-17 2025-07-24 The Hong Kong University Of Science And Technology Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma

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Publication number Priority date Publication date Assignee Title
JPH0294522A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
EP0647163B1 (en) * 1992-06-22 1998-09-09 Lam Research Corporation A plasma cleaning method for removing residues in a plasma treatment chamber
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
EP0774772A1 (en) 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
DE19736370C2 (de) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
KR100269323B1 (ko) * 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
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DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
SE9903213D0 (sv) * 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6347874B1 (en) * 2000-02-16 2002-02-19 3M Innovative Properties Company Wedge light extractor with risers
JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
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US8179034B2 (en) * 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (zh) 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
EP2449609A1 (en) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction

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