JP2013510442A5 - - Google Patents

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Publication number
JP2013510442A5
JP2013510442A5 JP2012537938A JP2012537938A JP2013510442A5 JP 2013510442 A5 JP2013510442 A5 JP 2013510442A5 JP 2012537938 A JP2012537938 A JP 2012537938A JP 2012537938 A JP2012537938 A JP 2012537938A JP 2013510442 A5 JP2013510442 A5 JP 2013510442A5
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JP
Japan
Prior art keywords
semiconductor
vacuum chamber
etching
cleaning
reactive
Prior art date
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JP2012537938A
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English (en)
Japanese (ja)
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JP5723377B2 (ja
JP2013510442A (ja
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Priority claimed from PCT/US2010/055096 external-priority patent/WO2011056783A2/en
Publication of JP2013510442A publication Critical patent/JP2013510442A/ja
Publication of JP2013510442A5 publication Critical patent/JP2013510442A5/ja
Application granted granted Critical
Publication of JP5723377B2 publication Critical patent/JP5723377B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012537938A 2009-11-09 2010-11-02 半導体のためのエッチングプロセス Expired - Fee Related JP5723377B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09
PCT/US2010/055096 WO2011056783A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Publications (3)

Publication Number Publication Date
JP2013510442A JP2013510442A (ja) 2013-03-21
JP2013510442A5 true JP2013510442A5 (enExample) 2013-08-29
JP5723377B2 JP5723377B2 (ja) 2015-05-27

Family

ID=43970710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012537938A Expired - Fee Related JP5723377B2 (ja) 2009-11-09 2010-11-02 半導体のためのエッチングプロセス

Country Status (7)

Country Link
US (1) US8765611B2 (enExample)
EP (1) EP2499663A2 (enExample)
JP (1) JP5723377B2 (enExample)
KR (1) KR20120095411A (enExample)
CN (1) CN102893378A (enExample)
TW (1) TW201135832A (enExample)
WO (1) WO2011056783A2 (enExample)

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JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
JP6036830B2 (ja) 2012-08-21 2016-11-30 王子ホールディングス株式会社 半導体発光素子用基板及び半導体発光素子、並びにこれらの製造方法
US9925569B2 (en) 2012-09-25 2018-03-27 Applied Materials, Inc. Chamber cleaning with infrared absorption gas
CN103901516B (zh) * 2012-12-26 2016-06-15 清华大学 光栅的制备方法
US8941145B2 (en) * 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (ja) * 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
KR102666776B1 (ko) * 2019-05-10 2024-05-21 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판
EP4060076A4 (en) * 2019-11-12 2023-01-25 Showa Denko K.K. METHODS FOR REMOVAL OF ADHESIVE SUBSTANCES AND FILM FORMING METHODS
WO2022110005A1 (zh) * 2020-11-27 2022-06-02 苏州晶湛半导体有限公司 半导体发光器件及其制备方法
CN113823992B (zh) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 半导体器件制造方法及半导体器件
CN115343788B (zh) * 2022-08-18 2024-03-15 上海交通大学 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜
CN117525220A (zh) * 2023-11-17 2024-02-06 北京北方华创微电子装备有限公司 半导体器件的制造方法及半导体工艺设备
TW202530773A (zh) * 2024-01-17 2025-08-01 香港科技大學 使用氬氣電漿對砷化鋁鎵光波導進行乾蝕刻的裝置與方法

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US5404027A (en) 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
KR100293830B1 (ko) * 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
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JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
EP0774772A1 (en) 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
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JP2005353972A (ja) 2004-06-14 2005-12-22 Canon Inc プラズマ処理方法
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
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WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
US8179034B2 (en) 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (zh) 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
US8541803B2 (en) * 2009-05-05 2013-09-24 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction

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