JP2009071291A5 - - Google Patents

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Publication number
JP2009071291A5
JP2009071291A5 JP2008204717A JP2008204717A JP2009071291A5 JP 2009071291 A5 JP2009071291 A5 JP 2009071291A5 JP 2008204717 A JP2008204717 A JP 2008204717A JP 2008204717 A JP2008204717 A JP 2008204717A JP 2009071291 A5 JP2009071291 A5 JP 2009071291A5
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JP
Japan
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frequency power
vacuum chamber
semiconductor device
manufacturing
introducing
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JP2008204717A
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English (en)
Japanese (ja)
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JP2009071291A (ja
JP5331407B2 (ja
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Priority claimed from JP2008204717A external-priority patent/JP5331407B2/ja
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Publication of JP2009071291A5 publication Critical patent/JP2009071291A5/ja
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Publication of JP5331407B2 publication Critical patent/JP5331407B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008204717A 2007-08-17 2008-08-07 半導体装置の作製方法 Expired - Fee Related JP5331407B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008204717A JP5331407B2 (ja) 2007-08-17 2008-08-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007213102 2007-08-17
JP2007213102 2007-08-17
JP2008204717A JP5331407B2 (ja) 2007-08-17 2008-08-07 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009071291A JP2009071291A (ja) 2009-04-02
JP2009071291A5 true JP2009071291A5 (enExample) 2011-08-11
JP5331407B2 JP5331407B2 (ja) 2013-10-30

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Family Applications (1)

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JP2008204717A Expired - Fee Related JP5331407B2 (ja) 2007-08-17 2008-08-07 半導体装置の作製方法

Country Status (5)

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US (2) US7833845B2 (enExample)
JP (1) JP5331407B2 (enExample)
KR (1) KR101518792B1 (enExample)
CN (1) CN101369540B (enExample)
TW (1) TWI447915B (enExample)

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JP5331407B2 (ja) * 2007-08-17 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US7989325B2 (en) 2009-01-13 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
WO2011002046A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101944656B1 (ko) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5642447B2 (ja) * 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
TWI559501B (zh) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011037010A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
JP5508889B2 (ja) * 2010-02-16 2014-06-04 日本放送協会 薄膜蛍光体、ディスプレイ、ブラウン管および薄膜蛍光体の製造方法
US8383434B2 (en) * 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP5933188B2 (ja) 2010-05-14 2016-06-08 株式会社半導体エネルギー研究所 微結晶シリコン膜及びその作製方法、並びに半導体装置
JP5785770B2 (ja) 2010-05-14 2015-09-30 株式会社半導体エネルギー研究所 微結晶半導体膜の作製方法、及び半導体装置の作製方法
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9170424B2 (en) * 2010-07-30 2015-10-27 Sony Corporation Illumination unit and display
CN102386072B (zh) 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
US8338240B2 (en) * 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP2012089708A (ja) 2010-10-20 2012-05-10 Semiconductor Energy Lab Co Ltd 微結晶シリコン膜の作製方法、半導体装置の作製方法
US8450158B2 (en) 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8394685B2 (en) 2010-12-06 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Etching method and manufacturing method of thin film transistor
KR101770969B1 (ko) * 2011-01-21 2017-08-25 삼성디스플레이 주식회사 터치 센싱 기판 및 이의 제조 방법
US9048327B2 (en) 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
JP2013051370A (ja) * 2011-08-31 2013-03-14 Tokyo Electron Ltd 成膜方法及び記憶媒体
US9111891B2 (en) * 2012-02-06 2015-08-18 Joled Inc. EL display apparatus and manufacturing method thereof
JP5963564B2 (ja) 2012-06-20 2016-08-03 スタンレー電気株式会社 液晶表示装置
JP2014107447A (ja) * 2012-11-28 2014-06-09 Nitto Denko Corp 封止シート、光半導体装置およびその製造方法
KR20140090019A (ko) * 2013-01-08 2014-07-16 삼성디스플레이 주식회사 표시 장치
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
US20160155803A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
CN104532192B (zh) * 2014-12-19 2018-01-30 深圳市华星光电技术有限公司 蒸镀装置
CN113571588A (zh) 2015-04-13 2021-10-29 株式会社半导体能源研究所 半导体装置及其制造方法
CN110730983B (zh) * 2017-06-07 2021-11-23 夏普株式会社 显示设备、显示设备的制造方法、显示设备的制造装置
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CN113394235B (zh) * 2021-05-20 2022-10-21 北海惠科光电技术有限公司 阵列基板及阵列基板的制造方法

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JP5331407B2 (ja) * 2007-08-17 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法

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