CN101369540B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

Info

Publication number
CN101369540B
CN101369540B CN2008102104921A CN200810210492A CN101369540B CN 101369540 B CN101369540 B CN 101369540B CN 2008102104921 A CN2008102104921 A CN 2008102104921A CN 200810210492 A CN200810210492 A CN 200810210492A CN 101369540 B CN101369540 B CN 101369540B
Authority
CN
China
Prior art keywords
film
frequency power
substrate
forming
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008102104921A
Other languages
English (en)
Chinese (zh)
Other versions
CN101369540A (zh
Inventor
山崎舜平
手塚祐朗
鸟海聪志
古野诚
神保安弘
大力浩二
桑原秀明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101369540A publication Critical patent/CN101369540A/zh
Application granted granted Critical
Publication of CN101369540B publication Critical patent/CN101369540B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
CN2008102104921A 2007-08-17 2008-08-14 半导体装置的制造方法 Expired - Fee Related CN101369540B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007213102 2007-08-17
JP2007-213102 2007-08-17
JP2007213102 2007-08-17

Publications (2)

Publication Number Publication Date
CN101369540A CN101369540A (zh) 2009-02-18
CN101369540B true CN101369540B (zh) 2012-07-04

Family

ID=40363290

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008102104921A Expired - Fee Related CN101369540B (zh) 2007-08-17 2008-08-14 半导体装置的制造方法

Country Status (5)

Country Link
US (2) US7833845B2 (enExample)
JP (1) JP5331407B2 (enExample)
KR (1) KR101518792B1 (enExample)
CN (1) CN101369540B (enExample)
TW (1) TWI447915B (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825488B2 (en) * 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101743629B (zh) * 2007-07-17 2012-06-13 夏普株式会社 具备薄膜晶体管的半导体装置及其制造方法
JP5331407B2 (ja) * 2007-08-17 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US7989325B2 (en) 2009-01-13 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
WO2011002046A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101944656B1 (ko) 2009-06-30 2019-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5642447B2 (ja) * 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
TWI559501B (zh) 2009-08-07 2016-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011037010A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
JP5508889B2 (ja) * 2010-02-16 2014-06-04 日本放送協会 薄膜蛍光体、ディスプレイ、ブラウン管および薄膜蛍光体の製造方法
US8383434B2 (en) * 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP5933188B2 (ja) 2010-05-14 2016-06-08 株式会社半導体エネルギー研究所 微結晶シリコン膜及びその作製方法、並びに半導体装置
JP5785770B2 (ja) 2010-05-14 2015-09-30 株式会社半導体エネルギー研究所 微結晶半導体膜の作製方法、及び半導体装置の作製方法
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9170424B2 (en) * 2010-07-30 2015-10-27 Sony Corporation Illumination unit and display
CN102386072B (zh) 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
US8338240B2 (en) * 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP2012089708A (ja) 2010-10-20 2012-05-10 Semiconductor Energy Lab Co Ltd 微結晶シリコン膜の作製方法、半導体装置の作製方法
US8450158B2 (en) 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8394685B2 (en) 2010-12-06 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Etching method and manufacturing method of thin film transistor
KR101770969B1 (ko) * 2011-01-21 2017-08-25 삼성디스플레이 주식회사 터치 센싱 기판 및 이의 제조 방법
US9048327B2 (en) 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
JP2013051370A (ja) * 2011-08-31 2013-03-14 Tokyo Electron Ltd 成膜方法及び記憶媒体
US9111891B2 (en) * 2012-02-06 2015-08-18 Joled Inc. EL display apparatus and manufacturing method thereof
JP5963564B2 (ja) 2012-06-20 2016-08-03 スタンレー電気株式会社 液晶表示装置
JP2014107447A (ja) * 2012-11-28 2014-06-09 Nitto Denko Corp 封止シート、光半導体装置およびその製造方法
KR20140090019A (ko) * 2013-01-08 2014-07-16 삼성디스플레이 주식회사 표시 장치
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
US20160155803A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
CN104532192B (zh) * 2014-12-19 2018-01-30 深圳市华星光电技术有限公司 蒸镀装置
CN113571588A (zh) 2015-04-13 2021-10-29 株式会社半导体能源研究所 半导体装置及其制造方法
CN110730983B (zh) * 2017-06-07 2021-11-23 夏普株式会社 显示设备、显示设备的制造方法、显示设备的制造装置
WO2020101838A1 (en) * 2018-11-16 2020-05-22 Mattson Technology, Inc. Chamber seasoning to improve etch uniformity by reducing chemistry
CN113394235B (zh) * 2021-05-20 2022-10-21 北海惠科光电技术有限公司 阵列基板及阵列基板的制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1131340A (zh) * 1994-12-27 1996-09-18 松下电器产业株式会社 多结晶薄膜的形成方法和制造薄膜晶体管的方法
US6224950B1 (en) * 1993-12-27 2001-05-01 Kabushiki Kaisha Toshiba Method for formation of thin film

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US4605941A (en) * 1978-03-08 1986-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2726414B2 (ja) * 1987-03-04 1998-03-11 株式会社東芝 ケイ素系薄膜の製造方法
JPH06326026A (ja) 1993-04-13 1994-11-25 Applied Materials Inc 半導体装置の薄膜形成方法
US5571571A (en) * 1993-06-16 1996-11-05 Applied Materials, Inc. Method of forming a thin film for a semiconductor device
JPH0794749A (ja) * 1993-09-22 1995-04-07 Toshiba Corp 薄膜トランジスタの製造方法
JP3376051B2 (ja) * 1993-12-03 2003-02-10 三菱電機株式会社 薄膜トランジスタおよびその製造方法
JPH07254592A (ja) 1994-03-16 1995-10-03 Fujitsu Ltd 半導体装置の製造方法
JPH0888397A (ja) * 1994-09-16 1996-04-02 Casio Comput Co Ltd 光電変換素子
JPH09232235A (ja) * 1995-02-24 1997-09-05 Mitsui Toatsu Chem Inc 光電変換素子
JP3897582B2 (ja) * 2000-12-12 2007-03-28 キヤノン株式会社 真空処理方法、真空処理装置、半導体装置の製造方法および半導体装置
JP5331407B2 (ja) * 2007-08-17 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6224950B1 (en) * 1993-12-27 2001-05-01 Kabushiki Kaisha Toshiba Method for formation of thin film
CN1131340A (zh) * 1994-12-27 1996-09-18 松下电器产业株式会社 多结晶薄膜的形成方法和制造薄膜晶体管的方法

Also Published As

Publication number Publication date
JP2009071291A (ja) 2009-04-02
US8263421B2 (en) 2012-09-11
CN101369540A (zh) 2009-02-18
TW200917493A (en) 2009-04-16
US20110059562A1 (en) 2011-03-10
KR20090018587A (ko) 2009-02-20
KR101518792B1 (ko) 2015-05-12
TWI447915B (zh) 2014-08-01
US7833845B2 (en) 2010-11-16
US20090047761A1 (en) 2009-02-19
JP5331407B2 (ja) 2013-10-30

Similar Documents

Publication Publication Date Title
CN101369540B (zh) 半导体装置的制造方法
JP7689609B2 (ja) 半導体装置
CN101369541B (zh) 半导体器件的制造方法
JP5478037B2 (ja) 表示装置の作製方法
US7910929B2 (en) Semiconductor device
US8633485B2 (en) Display device and manufacturing method thereof
TWI521564B (zh) 半導體裝置的製造方法
US20090114917A1 (en) Thin film transistor and display device having the thin film transistor

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120704

Termination date: 20190814