JP2009071286A5 - - Google Patents
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- Publication number
- JP2009071286A5 JP2009071286A5 JP2008202638A JP2008202638A JP2009071286A5 JP 2009071286 A5 JP2009071286 A5 JP 2009071286A5 JP 2008202638 A JP2008202638 A JP 2008202638A JP 2008202638 A JP2008202638 A JP 2008202638A JP 2009071286 A5 JP2009071286 A5 JP 2009071286A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- forming
- display device
- manufacturing
- microcrystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 14
- 238000000034 method Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- 238000009832 plasma treatment Methods 0.000 claims 5
- 239000001307 helium Substances 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008202638A JP5478037B2 (ja) | 2007-08-17 | 2008-08-06 | 表示装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007212904 | 2007-08-17 | ||
| JP2007212903 | 2007-08-17 | ||
| JP2007212904 | 2007-08-17 | ||
| JP2007212903 | 2007-08-17 | ||
| JP2008202638A JP5478037B2 (ja) | 2007-08-17 | 2008-08-06 | 表示装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013262465A Division JP2014131036A (ja) | 2007-08-17 | 2013-12-19 | 成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009071286A JP2009071286A (ja) | 2009-04-02 |
| JP2009071286A5 true JP2009071286A5 (enExample) | 2011-08-04 |
| JP5478037B2 JP5478037B2 (ja) | 2014-04-23 |
Family
ID=40363287
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008202638A Expired - Fee Related JP5478037B2 (ja) | 2007-08-17 | 2008-08-06 | 表示装置の作製方法 |
| JP2013262465A Withdrawn JP2014131036A (ja) | 2007-08-17 | 2013-12-19 | 成膜装置 |
| JP2015225539A Expired - Fee Related JP6154880B2 (ja) | 2007-08-17 | 2015-11-18 | 表示装置の作製方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013262465A Withdrawn JP2014131036A (ja) | 2007-08-17 | 2013-12-19 | 成膜装置 |
| JP2015225539A Expired - Fee Related JP6154880B2 (ja) | 2007-08-17 | 2015-11-18 | 表示装置の作製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7611930B2 (enExample) |
| JP (3) | JP5478037B2 (enExample) |
| CN (1) | CN101369539B (enExample) |
| TW (1) | TWI506677B (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI575293B (zh) * | 2007-07-20 | 2017-03-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| US8101444B2 (en) | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2009071289A (ja) | 2007-08-17 | 2009-04-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20090090915A1 (en) | 2007-10-05 | 2009-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device having thin film transistor, and method for manufacturing the same |
| KR101999970B1 (ko) | 2008-09-19 | 2019-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN102246310B (zh) * | 2008-12-11 | 2013-11-06 | 株式会社半导体能源研究所 | 薄膜晶体管及显示装置 |
| KR20100067612A (ko) * | 2008-12-11 | 2010-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 표시 장치 |
| US8114720B2 (en) | 2008-12-25 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7989325B2 (en) * | 2009-01-13 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor |
| US9312156B2 (en) * | 2009-03-27 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| WO2011048925A1 (en) | 2009-10-21 | 2011-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5698950B2 (ja) * | 2009-10-23 | 2015-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| US8431496B2 (en) * | 2010-03-05 | 2013-04-30 | Semiconductor Energy Labortory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8487306B2 (en) * | 2010-06-18 | 2013-07-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element, display device, electronic device, and method for manufacturing photoelectric conversion element |
| US8778745B2 (en) * | 2010-06-29 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8440548B2 (en) | 2010-08-06 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor |
| US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8647919B2 (en) * | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
| US8338240B2 (en) * | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
| US8895116B2 (en) | 2010-11-04 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device |
| US8450158B2 (en) * | 2010-11-04 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
| US9048327B2 (en) * | 2011-01-25 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device |
| US9111775B2 (en) | 2011-01-28 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Silicon structure and manufacturing methods thereof and of capacitor including silicon structure |
| US8828859B2 (en) * | 2011-02-11 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor film and method for manufacturing semiconductor device |
| CN102646634B (zh) * | 2011-04-29 | 2013-06-12 | 京东方科技集团股份有限公司 | Tft-lcd阵列基板制造方法 |
| US9660092B2 (en) | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
| WO2015181679A1 (en) * | 2014-05-27 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN104532192B (zh) * | 2014-12-19 | 2018-01-30 | 深圳市华星光电技术有限公司 | 蒸镀装置 |
| JP6861479B2 (ja) * | 2016-06-24 | 2021-04-21 | 東京エレクトロン株式会社 | プラズマ成膜方法およびプラズマ成膜装置 |
| CN107658267B (zh) * | 2017-09-15 | 2020-11-06 | 惠科股份有限公司 | 阵列基板的制造方法 |
| CN108417583B (zh) * | 2018-03-09 | 2021-10-29 | 惠科股份有限公司 | 一种阵列基板的制造方法和阵列基板 |
| KR20200083813A (ko) * | 2018-12-28 | 2020-07-09 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN110634390A (zh) * | 2019-09-20 | 2019-12-31 | 武汉天马微电子有限公司 | 一种显示面板及显示装置 |
| US11674222B2 (en) * | 2020-09-29 | 2023-06-13 | Applied Materials, Inc. | Method of in situ ceramic coating deposition |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPS6092475A (ja) * | 1983-10-25 | 1985-05-24 | Anelva Corp | 光化学的薄膜製造方法および装置 |
| US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| JP2726414B2 (ja) * | 1987-03-04 | 1998-03-11 | 株式会社東芝 | ケイ素系薄膜の製造方法 |
| JPH01321625A (ja) * | 1988-06-23 | 1989-12-27 | Hitachi Ltd | 薄膜形成方法及び薄膜形成装置 |
| JP2708569B2 (ja) * | 1989-09-20 | 1998-02-04 | 株式会社日立製作所 | 真空装置の脱ガス方法及び脱ガス装置 |
| JPH03278466A (ja) * | 1990-03-27 | 1991-12-10 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
| JP2791422B2 (ja) | 1990-12-25 | 1998-08-27 | 株式会社 半導体エネルギー研究所 | 電気光学装置およびその作製方法 |
| US7115902B1 (en) * | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| JP2561572B2 (ja) * | 1991-05-11 | 1996-12-11 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型電界効果トランジスタの作製方法 |
| JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
| JP3025789B2 (ja) * | 1991-06-28 | 2000-03-27 | 東京エレクトロン株式会社 | 排気方法 |
| US5582880A (en) * | 1992-03-27 | 1996-12-10 | Canon Kabushiki Kaisha | Method of manufacturing non-single crystal film and non-single crystal semiconductor device |
| JP3201492B2 (ja) | 1992-03-27 | 2001-08-20 | キヤノン株式会社 | 非晶質シリコン膜の製造方法、非晶質窒化シリコン膜の製造方法、微結晶シリコン膜の製造方法、及び非単結晶半導体装置 |
| JPH05335256A (ja) * | 1992-06-03 | 1993-12-17 | Fujitsu Ltd | 半導体製造装置及びその清掃方法 |
| EP0632144B1 (en) * | 1993-06-30 | 1999-09-08 | Applied Materials, Inc. | Method of purging and pumping vacuum chamber to ultra-high vacuum |
| JPH0794749A (ja) | 1993-09-22 | 1995-04-07 | Toshiba Corp | 薄膜トランジスタの製造方法 |
| JP3152829B2 (ja) * | 1994-01-18 | 2001-04-03 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH0897436A (ja) * | 1994-07-27 | 1996-04-12 | Sharp Corp | 薄膜半導体素子とその製造方法 |
| US6699530B2 (en) * | 1995-07-06 | 2004-03-02 | Applied Materials, Inc. | Method for constructing a film on a semiconductor wafer |
| JPH08148690A (ja) * | 1994-11-25 | 1996-06-07 | Sharp Corp | 薄膜トランジスタおよび半導体膜の製造方法 |
| JPH09232235A (ja) * | 1995-02-24 | 1997-09-05 | Mitsui Toatsu Chem Inc | 光電変換素子 |
| JPH10229213A (ja) * | 1996-12-12 | 1998-08-25 | Canon Inc | 半導体薄膜の形成方法 |
| JP3581546B2 (ja) * | 1997-11-27 | 2004-10-27 | キヤノン株式会社 | 微結晶シリコン膜形成方法および光起電力素子の製造方法 |
| JP2002083773A (ja) * | 2000-09-06 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2002329878A (ja) * | 2001-04-27 | 2002-11-15 | Sharp Corp | 薄膜太陽電池および薄膜太陽電池の作製方法 |
| WO2004087991A1 (ja) * | 2003-03-31 | 2004-10-14 | Konica Minolta Holdings, Inc. | 薄膜形成装置及び薄膜形成方法 |
| CN101483180B (zh) * | 2003-07-14 | 2011-11-16 | 株式会社半导体能源研究所 | 液晶显示器件 |
| JP4748954B2 (ja) | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| TWI368774B (en) * | 2003-07-14 | 2012-07-21 | Semiconductor Energy Lab | Light-emitting device |
| JP4393812B2 (ja) * | 2003-07-18 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| JP2005167051A (ja) * | 2003-12-04 | 2005-06-23 | Sony Corp | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
| JP2007049171A (ja) * | 2006-08-30 | 2007-02-22 | Chi Mei Electronics Corp | 微結晶薄膜トランジスタを用いた画像表示装置 |
-
2008
- 2008-08-05 US US12/186,001 patent/US7611930B2/en not_active Expired - Fee Related
- 2008-08-06 JP JP2008202638A patent/JP5478037B2/ja not_active Expired - Fee Related
- 2008-08-12 TW TW097130667A patent/TWI506677B/zh not_active IP Right Cessation
- 2008-08-15 CN CN2008101456660A patent/CN101369539B/zh not_active Expired - Fee Related
-
2013
- 2013-12-19 JP JP2013262465A patent/JP2014131036A/ja not_active Withdrawn
-
2015
- 2015-11-18 JP JP2015225539A patent/JP6154880B2/ja not_active Expired - Fee Related
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