JP2013046070A5 - - Google Patents
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- Publication number
- JP2013046070A5 JP2013046070A5 JP2012182159A JP2012182159A JP2013046070A5 JP 2013046070 A5 JP2013046070 A5 JP 2013046070A5 JP 2012182159 A JP2012182159 A JP 2012182159A JP 2012182159 A JP2012182159 A JP 2012182159A JP 2013046070 A5 JP2013046070 A5 JP 2013046070A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- process gas
- gas
- plasma
- amorphous carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 51
- 239000007789 gas Substances 0.000 claims 28
- 239000000758 substrate Substances 0.000 claims 14
- 239000004215 Carbon black (E152) Substances 0.000 claims 7
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 7
- 229930195733 hydrocarbon Natural products 0.000 claims 7
- 150000002430 hydrocarbons Chemical class 0.000 claims 7
- 229910052760 oxygen Inorganic materials 0.000 claims 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims 2
- 230000005284 excitation Effects 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/217,813 US8399366B1 (en) | 2011-08-25 | 2011-08-25 | Method of depositing highly conformal amorphous carbon films over raised features |
| US13/217,813 | 2011-08-25 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013046070A JP2013046070A (ja) | 2013-03-04 |
| JP2013046070A5 true JP2013046070A5 (enExample) | 2015-10-08 |
| JP6010387B2 JP6010387B2 (ja) | 2016-10-19 |
Family
ID=47744307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012182159A Expired - Fee Related JP6010387B2 (ja) | 2011-08-25 | 2012-08-21 | 半導体装置を形成するための方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8399366B1 (enExample) |
| JP (1) | JP6010387B2 (enExample) |
| KR (1) | KR101921336B1 (enExample) |
| CN (1) | CN102956473B (enExample) |
| TW (1) | TWI496193B (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107437547B (zh) * | 2016-05-26 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制作方法 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| KR20240097984A (ko) * | 2018-05-03 | 2024-06-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| CN108735570B (zh) * | 2018-05-25 | 2019-06-18 | 中国科学院微电子研究所 | 用于SiC等离子体氧化的微波等离子体发生装置 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| KR20220030249A (ko) * | 2019-06-24 | 2022-03-10 | 램 리써치 코포레이션 | 선택적 탄소 증착 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US12198928B2 (en) | 2021-10-22 | 2025-01-14 | Applied Materials, Inc. | Carbon gap fill processes |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| WO2025208079A1 (en) * | 2024-03-29 | 2025-10-02 | Lam Research Corporation | Temporal switching to achieve geometric selective deposition of carbon in patterned features |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294580B2 (en) * | 2003-04-09 | 2007-11-13 | Lam Research Corporation | Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition |
| US7638440B2 (en) | 2004-03-12 | 2009-12-29 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
| JP2007224383A (ja) * | 2006-02-24 | 2007-09-06 | Tokyo Electron Ltd | アモルファスカーボン膜の成膜方法、それを用いた半導体装置の製造方法、およびコンピュータ読取可能な記憶媒体 |
| US20070286954A1 (en) * | 2006-06-13 | 2007-12-13 | Applied Materials, Inc. | Methods for low temperature deposition of an amorphous carbon layer |
| US20080153311A1 (en) * | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
| KR101025821B1 (ko) | 2006-07-05 | 2011-03-30 | 도쿄엘렉트론가부시키가이샤 | 아모퍼스 카본막의 후처리 방법, 이를 이용한 반도체 장치의 제조 방법 및, 제어 프로그램이 기억된 컴퓨터 판독가능한 기억 매체 |
| JP5200371B2 (ja) | 2006-12-01 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜方法、半導体装置及び記憶媒体 |
| CN101622693B (zh) * | 2007-02-28 | 2012-07-04 | 东京毅力科创株式会社 | 无定形碳膜的形成方法和半导体装置的制造方法 |
| JP5297885B2 (ja) * | 2008-06-18 | 2013-09-25 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| US7842622B1 (en) * | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
| JP5710606B2 (ja) * | 2009-06-26 | 2015-04-30 | 東京エレクトロン株式会社 | アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善 |
-
2011
- 2011-08-25 US US13/217,813 patent/US8399366B1/en not_active Expired - Fee Related
-
2012
- 2012-08-21 JP JP2012182159A patent/JP6010387B2/ja not_active Expired - Fee Related
- 2012-08-22 KR KR1020120091781A patent/KR101921336B1/ko not_active Expired - Fee Related
- 2012-08-23 TW TW101130665A patent/TWI496193B/zh not_active IP Right Cessation
- 2012-08-27 CN CN201210315731.6A patent/CN102956473B/zh not_active Expired - Fee Related
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