JP2009033179A5 - - Google Patents
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- Publication number
- JP2009033179A5 JP2009033179A5 JP2008196682A JP2008196682A JP2009033179A5 JP 2009033179 A5 JP2009033179 A5 JP 2009033179A5 JP 2008196682 A JP2008196682 A JP 2008196682A JP 2008196682 A JP2008196682 A JP 2008196682A JP 2009033179 A5 JP2009033179 A5 JP 2009033179A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- process gas
- chamber
- oxygen
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 21
- 239000000758 substrate Substances 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 238000009616 inductively coupled plasma Methods 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- -1 oxygen hydrogen Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/830,140 US7645709B2 (en) | 2007-07-30 | 2007-07-30 | Methods for low temperature oxidation of a semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009033179A JP2009033179A (ja) | 2009-02-12 |
| JP2009033179A5 true JP2009033179A5 (enExample) | 2011-09-15 |
Family
ID=40338567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008196682A Pending JP2009033179A (ja) | 2007-07-30 | 2008-07-30 | 半導体デバイスの低温酸化のための方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7645709B2 (enExample) |
| JP (1) | JP2009033179A (enExample) |
| KR (2) | KR20090013051A (enExample) |
| TW (1) | TWI553734B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009114617A1 (en) * | 2008-03-14 | 2009-09-17 | Applied Materials, Inc. | Methods for oxidation of a semiconductor device |
| US8435906B2 (en) * | 2009-01-28 | 2013-05-07 | Applied Materials, Inc. | Methods for forming conformal oxide layers on semiconductor devices |
| US8481433B2 (en) | 2009-03-31 | 2013-07-09 | Applied Materials, Inc. | Methods and apparatus for forming nitrogen-containing layers |
| JP5595481B2 (ja) * | 2009-03-31 | 2014-09-24 | アプライド マテリアルズ インコーポレイテッド | 選択的窒素化の方法 |
| US8043981B2 (en) * | 2009-04-21 | 2011-10-25 | Applied Materials, Inc. | Dual frequency low temperature oxidation of a semiconductor device |
| US20100297854A1 (en) * | 2009-04-22 | 2010-11-25 | Applied Materials, Inc. | High throughput selective oxidation of silicon and polysilicon using plasma at room temperature |
| WO2010147937A2 (en) * | 2009-06-15 | 2010-12-23 | Applied Materials, Inc. | Enhancing nand flash floating gate performance |
| WO2011032854A2 (en) * | 2009-09-18 | 2011-03-24 | Oerlikon Solar Ag, Truebbach | A method for manufacturing a photovoltaic device |
| US20110189860A1 (en) * | 2010-02-02 | 2011-08-04 | Applied Materials, Inc. | Methods for nitridation and oxidation |
| CN102108484B (zh) * | 2011-01-18 | 2012-07-04 | 厦门建霖工业有限公司 | 一种双层抗菌镀层的制备方法 |
| US20120326230A1 (en) * | 2011-06-22 | 2012-12-27 | International Business Machines Corporation | Silicon on insulator complementary metal oxide semiconductor with an isolation formed at low temperature |
| US9054048B2 (en) | 2011-07-05 | 2015-06-09 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer on a substrate |
| JP6254098B2 (ja) | 2012-02-13 | 2017-12-27 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 基板の選択性酸化のための方法および装置 |
| DE102015109786A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements sowie optoelektronisches Halbleiterbauelement |
| US10020186B2 (en) * | 2016-07-29 | 2018-07-10 | Applied Materials, Inc. | Silicon germanium selective oxidation process |
| JP6304410B2 (ja) * | 2017-01-26 | 2018-04-04 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| CN108447770B (zh) * | 2018-03-08 | 2020-07-28 | 清华大学 | 二氧化硅薄膜的制备方法 |
| JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10790183B2 (en) | 2018-06-05 | 2020-09-29 | Applied Materials, Inc. | Selective oxidation for 3D device isolation |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59229887A (ja) * | 1983-06-11 | 1984-12-24 | Nippon Telegr & Teleph Corp <Ntt> | トンネル型ジヨセフソン接合素子の製法及びそれに使用する装置 |
| JPH05343391A (ja) | 1992-06-04 | 1993-12-24 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3231426B2 (ja) * | 1992-10-28 | 2001-11-19 | 富士通株式会社 | 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置 |
| TW520453B (en) * | 1999-12-27 | 2003-02-11 | Seiko Epson Corp | A method to fabricate thin insulating films |
| US6596653B2 (en) * | 2001-05-11 | 2003-07-22 | Applied Materials, Inc. | Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD |
| JP2003086569A (ja) * | 2001-09-12 | 2003-03-20 | Tokyo Electron Ltd | プラズマ処理方法 |
| JP2004095918A (ja) * | 2002-08-30 | 2004-03-25 | Fasl Japan Ltd | 半導体記憶装置及び半導体装置の製造方法 |
| JP4694108B2 (ja) * | 2003-05-23 | 2011-06-08 | 東京エレクトロン株式会社 | 酸化膜形成方法、酸化膜形成装置および電子デバイス材料 |
| US6958112B2 (en) * | 2003-05-27 | 2005-10-25 | Applied Materials, Inc. | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation |
| US7981785B2 (en) * | 2004-03-01 | 2011-07-19 | Tokyo Electron Limited | Method for manufacturing semiconductor device and plasma oxidation method |
| US7229931B2 (en) * | 2004-06-16 | 2007-06-12 | Applied Materials, Inc. | Oxygen plasma treatment for enhanced HDP-CVD gapfill |
| CN1993813B (zh) | 2004-08-13 | 2010-12-22 | 东京毅力科创株式会社 | 半导体装置的制造方法和等离子体氧化处理方法 |
| KR100580587B1 (ko) * | 2004-09-07 | 2006-05-16 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| US20060105114A1 (en) * | 2004-11-16 | 2006-05-18 | White John M | Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs |
| JP4718189B2 (ja) * | 2005-01-07 | 2011-07-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| US7141514B2 (en) * | 2005-02-02 | 2006-11-28 | Applied Materials, Inc. | Selective plasma re-oxidation process using pulsed RF source power |
| US7214628B2 (en) * | 2005-02-02 | 2007-05-08 | Applied Materials, Inc. | Plasma gate oxidation process using pulsed RF source power |
| US7972441B2 (en) * | 2005-04-05 | 2011-07-05 | Applied Materials, Inc. | Thermal oxidation of silicon using ozone |
-
2007
- 2007-07-30 US US11/830,140 patent/US7645709B2/en not_active Expired - Fee Related
-
2008
- 2008-07-22 TW TW097127833A patent/TWI553734B/zh active
- 2008-07-24 KR KR1020080072228A patent/KR20090013051A/ko not_active Ceased
- 2008-07-30 JP JP2008196682A patent/JP2009033179A/ja active Pending
-
2011
- 2011-02-07 KR KR1020110010563A patent/KR20110018408A/ko not_active Withdrawn
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