JP2009033179A - 半導体デバイスの低温酸化のための方法 - Google Patents
半導体デバイスの低温酸化のための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000003647 oxidation Effects 0.000 title description 19
- 238000007254 oxidation reaction Methods 0.000 title description 19
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 230000008569 process Effects 0.000 claims abstract description 58
- 239000007789 gas Substances 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 32
- 239000001301 oxygen Substances 0.000 claims abstract description 32
- 239000001257 hydrogen Substances 0.000 claims abstract description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 35
- 150000002431 hydrogen Chemical class 0.000 claims description 17
- 239000011261 inert gas Substances 0.000 claims description 6
- -1 oxygen hydrogen Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 description 10
- 241000293849 Cordylanthus Species 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010849 ion bombardment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【解決手段】 ある実施形態において、半導体基板上に酸化物層を形成する方法は、プラズマリアクタの真空チャンバ内で基板支持体上に酸化すべき基板を載置するステップであって、チャンバが基板支持体から遠隔のイオン発生領域を有する、前記ステップと;チャンバにプロセスガスを導入するステップであって、プロセスガスが水素(H2)と酸素(O2)の少なくとも一つ - 約3:1までの水素(H2)と酸素(O2)の流量比で示される - 又は水蒸気(H2O蒸気)を含む、前記ステップと;チャンバのイオン発生領域に誘導結合プラズマを生成させて、基板上に酸化シリコン層を形成するステップと;を含む。
【選択図】 図1
Description
[0001]本発明の実施形態は、一般的には、半導体製造、より詳細には、半導体デバイス又はその要素の酸化に関する。
[0002]半導体デバイスは、製造の種々の段階で、形成すべき酸化物薄層を必要とする。例えば、トランジスタでは、ゲート酸化物薄層がゲートスタック構造の一部として形成されるのがよい。更に、ある用途では、例えば、フラッシュメモリ膜スタックの製造では、酸化物薄層は、例えば、スタックを酸化プロセスにさらすことによって、ゲートスタック全体を取り囲んで形成されるのがよい。このような酸化プロセスは、従来は熱的に或いはプラズマを用いて行われてきた。
Claims (15)
- 半導体基板上に酸化物層を形成する方法であって:
プラズマリアクタの真空チャンバ内の基板支持体上に酸化すべき基板を載置するステップであって、該チャンバが該基板支持体から遠隔のイオン発生領域を有する、前記ステップと;
該チャンバにプロセスガスを導入するステップであって、該プロセスガスが水素(H2)と酸素(O2)の少なくとも一つ - 約3:1までの水素(H2)と酸素(O2)の流量比で示される - 又は水蒸気(H2O蒸気)を含む、前記ステップと;
該チャンバの該イオン発生領域に誘導結合プラズマを生成させて、該基板上に酸化シリコン層を形成するステップと;
を含む、前記方法。 - 該基板が、更に、複数の層を備え膜スタックを含み、該酸化シリコン層が該スタック上に形成される、請求項1に記載の方法。
- 該プロセスガスが、更に、水蒸気(H2O蒸気)を含む、請求項1又は2に記載の方法。
- 該プロセスガスが、更に、水素(H2)と酸素(O2)の少なくとも一つを含む、請求項3に記載の方法。
- 該プロセスガスが、更に、少なくとも一つの不活性ガスを含む、請求項1-4のいずれか1項に記載の方法。
- 該プロセスガスが、水素(H2)と酸素(O2)を含む、請求項1-2のいずれか1項に記載の方法。
- 該プロセスガスが、約1:3〜3:1の流量比で供給される水素(H2)と酸素(O2)を含む、請求項6に記載の方法。
- 該プロセスガスが、約3:1までの水素(H2)と酸素(O2)の流量比で供給される水素(H2)と酸素(O2)を含む、請求項6に記載の方法。
- 該基板を約700℃未満に維持するステップを更に含む、請求項1-8のいずれか1項に記載の方法。
- 該基板を約600℃未満に維持するステップを更に含む、請求項1-8のいずれか1項に記載の方法。
- 該チャンバ内の圧力が、約5-500ミリトールに維持される、請求項1-10のいずれか1項に記載の方法。
- 該酸化シリコン膜の成長速度が、約7-50オングストローム/分である、請求項1-11のいずれか1項に記載の方法。
- 誘導結合プラズマを生成させるステップが、
パルスプラズマ源電力を供給する工程、
を更に含む、請求項1-12のいずれか1項に記載の方法。 - 該プラズマ源電力を約5-20kHzのパルス周波数で且つ約2-70パーセントのデューティサイクルでパルスにするステップを更に含む、請求項13に記載の方法。
- 該イオン発生領域が、該基板支持体から約2-20cmに配置される、請求項1-14のいずれか1項に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/830,140 US7645709B2 (en) | 2007-07-30 | 2007-07-30 | Methods for low temperature oxidation of a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009033179A true JP2009033179A (ja) | 2009-02-12 |
JP2009033179A5 JP2009033179A5 (ja) | 2011-09-15 |
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- 2008-07-24 KR KR1020080072228A patent/KR20090013051A/ko active Application Filing
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KR20090013051A (ko) | 2009-02-04 |
TW200913069A (en) | 2009-03-16 |
US20090035952A1 (en) | 2009-02-05 |
TWI553734B (zh) | 2016-10-11 |
KR20110018408A (ko) | 2011-02-23 |
US7645709B2 (en) | 2010-01-12 |
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