JP2008047884A5 - - Google Patents

Download PDF

Info

Publication number
JP2008047884A5
JP2008047884A5 JP2007183835A JP2007183835A JP2008047884A5 JP 2008047884 A5 JP2008047884 A5 JP 2008047884A5 JP 2007183835 A JP2007183835 A JP 2007183835A JP 2007183835 A JP2007183835 A JP 2007183835A JP 2008047884 A5 JP2008047884 A5 JP 2008047884A5
Authority
JP
Japan
Prior art keywords
gas
insulating layer
gate electrode
manufacturing
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007183835A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008047884A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007183835A priority Critical patent/JP2008047884A/ja
Priority claimed from JP2007183835A external-priority patent/JP2008047884A/ja
Publication of JP2008047884A publication Critical patent/JP2008047884A/ja
Publication of JP2008047884A5 publication Critical patent/JP2008047884A5/ja
Withdrawn legal-status Critical Current

Links

JP2007183835A 2006-07-21 2007-07-13 半導体装置の作製方法及び不揮発性半導体記憶装置の作製方法 Withdrawn JP2008047884A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007183835A JP2008047884A (ja) 2006-07-21 2007-07-13 半導体装置の作製方法及び不揮発性半導体記憶装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006199740 2006-07-21
JP2007183835A JP2008047884A (ja) 2006-07-21 2007-07-13 半導体装置の作製方法及び不揮発性半導体記憶装置の作製方法

Publications (2)

Publication Number Publication Date
JP2008047884A JP2008047884A (ja) 2008-02-28
JP2008047884A5 true JP2008047884A5 (enExample) 2010-06-24

Family

ID=39181276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007183835A Withdrawn JP2008047884A (ja) 2006-07-21 2007-07-13 半導体装置の作製方法及び不揮発性半導体記憶装置の作製方法

Country Status (1)

Country Link
JP (1) JP2008047884A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4823952B2 (ja) * 2007-03-26 2011-11-24 三菱電機株式会社 半導体装置の製造方法
US9401396B2 (en) 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
JP7530878B2 (ja) * 2021-09-30 2024-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170238A (ja) * 1984-02-15 1985-09-03 Toyota Central Res & Dev Lab Inc ドライエツチング方法
JP2842892B2 (ja) * 1989-07-04 1999-01-06 株式会社日立製作所 薄膜トランジスタとその製造方法ならびにそれを用いたマトリクス回路基板と画像表示装置
JP2000036484A (ja) * 1998-05-11 2000-02-02 Tokyo Electron Ltd プラズマ処理方法
JP4718189B2 (ja) * 2005-01-07 2011-07-06 東京エレクトロン株式会社 プラズマ処理方法

Similar Documents

Publication Publication Date Title
Choi et al. Reduced water vapor transmission rate of graphene gas barrier films for flexible organic field-effect transistors
JP2011249788A5 (ja) 半導体装置の作製方法、及び酸化物半導体層
Jia et al. Graphene oxide/graphene vertical heterostructure electrodes for highly efficient and flexible organic light emitting diodes
JP2009021563A5 (enExample)
JP6232219B2 (ja) 多層保護膜の形成方法
JP2009033179A5 (enExample)
JP2010056542A5 (enExample)
TWI505408B (zh) 成膜方法及非揮發性記憶裝置
JP2009010351A5 (enExample)
JP2015504239A5 (enExample)
JP2011151394A5 (ja) 半導体装置の作製方法
JP2011097032A5 (ja) 半導体装置の作製方法
JP2010103340A5 (ja) 半導体装置の作製方法、酸化物半導体、薄膜トランジスタ及び表示装置
JP2010062229A5 (ja) 半導体装置及び半導体装置の作製方法
JP2011035387A5 (ja) 半導体装置の作製方法
JP2004193162A5 (enExample)
JP2009071291A5 (enExample)
JP2012023356A5 (enExample)
JP2010537867A5 (enExample)
JP2010141304A5 (enExample)
JP2012134469A5 (enExample)
JP2011238912A5 (ja) 半導体装置の作製方法
CN103311433B (zh) 阻变存储器的制造方法
JP2011238900A5 (enExample)
CN103730373B (zh) 一种半导体器件的制备方法及半导体器件