JP5762491B2 - エッチング方法 - Google Patents
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- JP5762491B2 JP5762491B2 JP2013184393A JP2013184393A JP5762491B2 JP 5762491 B2 JP5762491 B2 JP 5762491B2 JP 2013184393 A JP2013184393 A JP 2013184393A JP 2013184393 A JP2013184393 A JP 2013184393A JP 5762491 B2 JP5762491 B2 JP 5762491B2
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- 238000005530 etching Methods 0.000 title claims description 215
- 238000000034 method Methods 0.000 title claims description 56
- 239000007789 gas Substances 0.000 claims description 225
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 163
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 160
- 239000000758 substrate Substances 0.000 claims description 154
- 238000012545 processing Methods 0.000 claims description 83
- 230000001681 protective effect Effects 0.000 claims description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 29
- 229910001882 dioxygen Inorganic materials 0.000 claims description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 24
- 229910052731 fluorine Inorganic materials 0.000 claims description 24
- 239000011737 fluorine Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 238000005513 bias potential Methods 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 description 51
- 229910004298 SiO 2 Inorganic materials 0.000 description 43
- 238000006243 chemical reaction Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- 150000003377 silicon compounds Chemical class 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000003682 fluorination reaction Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Description
処理チャンバ内の基台上に載置された炭化珪素基板をエッチングするエッチング方法であって、
前記炭化珪素基板を200℃以上に加熱し、フッ素系ガスを含む処理ガスを前記処理チャンバ内に供給してプラズマ化し、前記基台に高周波電力を供給してバイアス電位を与え、前記炭化珪素基板をエッチングする第1の工程と、
少なくとも、前記炭化珪素基板に、酸化シリコン膜又は窒化シリコン膜を形成する処理を含む第2の工程とを交互に繰り返して実施するようにしたことを特徴とするエッチング方法に係る。
前記第1の工程では、前記炭化珪素基板を等方的にエッチングし、
前記第2の工程では、前記炭化珪素基板を200℃以上に加熱し、フッ素系ガスと酸素ガス又は窒素ガスとを含む処理ガスを前記処理チャンバ内に供給してプラズマ化し、前記基台に高周波電力を供給してバイアス電位を与え、酸化シリコン膜又は窒化シリコン膜を保護膜として前記炭化珪素基板に形成しつつ該炭化珪素基板をエッチングすることを特徴とする請求項1に記載のエッチング方法に係る。
前記第1の工程における酸素ガスの供給流量をフッ素系ガスの供給流量の1倍以下、前記第2の工程における酸素ガスの供給流量をフッ素系ガスの供給流量の1倍以上、とすればより好ましく、前記第1の工程における酸素ガスの供給流量をフッ素系ガスの供給流量の0.25倍以下、前記第2の工程における酸素ガスの供給流量をフッ素系ガスの供給流量の1.5倍以上、とすれば更に好ましい。
また、第2の工程では第1の工程よりも酸素ガスの供給流量を多くすることが好ましいが、酸素ガスの供給流量がフッ素系ガスの供給流量の0.75倍〜1.25倍の間は、図5(c)のように、僅かながらも側壁がエッチングされ、僅かながらも溝H’が形成されるエッチング形状となる流量であるため、第1の工程及び第2の工程のどちらにも適用することが可能である。
保護膜形成時の処理条件として、保護膜形成時間を10秒間、SF6ガスの供給流量を10sccm、Arガスの供給流量を60sccm、O2ガスの供給流量を600sccm、コイル31に供給する高周波電力を2500W、基台15に供給する電力を700W、処理チャンバ11内の圧力を3Paとし、続くエッチング時の処理条件として、エッチング時間を2秒間、SF6ガスの供給流量を10sccm、Arガスの供給流量を60sccm、コイル31に供給する高周波電力を2500W、基台15に供給する電力を700W、処理チャンバ11内の圧力を3Paに設定した。
保護膜形成時の処理条件として、保護膜形成時間を30秒間、SiCl4ガスの供給流量を5sccm、O2ガスの供給流量を200sccm、コイル31に供給する高周波電力を1500W、基台15に供給する電力を0W、処理チャンバ11内の圧力を3Paに設定した。
11 処理チャンバ
15 基台
20 排気装置
25 ガス供給装置
26,27,28 ガス供給部
30 プラズマ生成装置
31 コイル
32,35 高周波電源
K 炭化珪素基板
Claims (4)
- 処理チャンバ内の基台上に載置された炭化珪素基板をエッチングするエッチング方法であって、
前記炭化珪素基板を200℃以上に加熱し、
少なくともSiF4ガス又はSiCl4ガスを含むシリコン系ガス、並びに酸素ガス又は窒素ガスを含む処理ガスを、前記処理チャンバ内に供給してプラズマ化し、
酸化シリコン膜又は窒化シリコン膜を保護膜として前記炭化珪素基板に形成しつつ該炭化珪素基板をエッチングし、
前記炭化珪素基板には、二酸化珪素膜からなるエッチングマスクのみが形成されていることを特徴とするエッチング方法。 - 前記処理ガスは、更に、フッ素系ガスを含むことを特徴とする請求項1記載のエッチング方法。
- 前記基台に高周波電力を供給してバイアス電位を与えるようにしたことを特徴とする請求項1又は2記載のエッチング方法。
- 前記基台に300W以上の高周波電力を供給するようにしたことを特徴とする請求項3記載のエッチング方法。
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PCT/JP2011/056005 WO2012008179A1 (ja) | 2010-07-12 | 2011-03-15 | エッチング方法 |
JP2013184393A JP5762491B2 (ja) | 2010-07-12 | 2013-09-05 | エッチング方法 |
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US (1) | US8859434B2 (ja) |
EP (1) | EP2595180B1 (ja) |
JP (2) | JP5889187B2 (ja) |
KR (1) | KR101836152B1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP5842138B2 (ja) * | 2012-08-24 | 2016-01-13 | パナソニックIpマネジメント株式会社 | SiC基板のエッチング方法 |
JP5889368B2 (ja) * | 2013-09-05 | 2016-03-22 | Sppテクノロジーズ株式会社 | プラズマエッチング方法 |
JP5967488B2 (ja) * | 2013-11-18 | 2016-08-10 | パナソニックIpマネジメント株式会社 | SiC基板のエッチング方法 |
JP6279933B2 (ja) * | 2014-02-28 | 2018-02-14 | Sppテクノロジーズ株式会社 | 炭化珪素半導体素子の製造方法 |
US9484376B2 (en) * | 2014-05-30 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor isolation structure and manufacturing method thereof |
KR102203460B1 (ko) | 2014-07-11 | 2021-01-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자의 제조방법 |
US9691625B2 (en) * | 2015-11-04 | 2017-06-27 | Lam Research Corporation | Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level |
JP6823527B2 (ja) * | 2017-04-14 | 2021-02-03 | 東京エレクトロン株式会社 | エッチング方法 |
JP6767302B2 (ja) * | 2017-04-14 | 2020-10-14 | 東京エレクトロン株式会社 | 成膜方法 |
US10483118B2 (en) * | 2017-05-11 | 2019-11-19 | Tokyo Electron Limited | Etching method |
JP7071850B2 (ja) * | 2017-05-11 | 2022-05-19 | 東京エレクトロン株式会社 | エッチング方法 |
JP2018200925A (ja) * | 2017-05-25 | 2018-12-20 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
JP2017214936A (ja) * | 2017-09-11 | 2017-12-07 | 住友重機械工業株式会社 | クライオポンプシステム、及びクライオポンプシステムの運転方法 |
CN108063088B (zh) * | 2017-10-30 | 2020-06-19 | 中国科学院微电子研究所 | SiC衬底的图形化方法 |
GB201810387D0 (en) * | 2018-06-25 | 2018-08-08 | Spts Technologies Ltd | Method of plasma etching |
RU2708812C1 (ru) * | 2019-05-08 | 2019-12-11 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский политехнический университет Петра Великого" (ФГАОУ ВО "СПбПУ") | Способ обработки поверхности пластин карбида кремния в низкотемпературной индуктивно-связанной плазме |
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WO2023203591A1 (ja) | 2022-04-18 | 2023-10-26 | 株式会社日立ハイテク | プラズマ処理方法 |
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