JP5877982B2 - プラズマエッチング方法 - Google Patents
プラズマエッチング方法 Download PDFInfo
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- JP5877982B2 JP5877982B2 JP2011207114A JP2011207114A JP5877982B2 JP 5877982 B2 JP5877982 B2 JP 5877982B2 JP 2011207114 A JP2011207114 A JP 2011207114A JP 2011207114 A JP2011207114 A JP 2011207114A JP 5877982 B2 JP5877982 B2 JP 5877982B2
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- 238000000034 method Methods 0.000 title claims description 48
- 238000001020 plasma etching Methods 0.000 title claims description 36
- 239000007789 gas Substances 0.000 claims description 134
- 239000000758 substrate Substances 0.000 claims description 107
- 238000005530 etching Methods 0.000 claims description 102
- 230000001681 protective effect Effects 0.000 claims description 71
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 54
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005513 bias potential Methods 0.000 claims description 7
- 229910018503 SF6 Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 4
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 73
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000011261 inert gas Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021543 Nickel dioxide Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- -1 is an etching target Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
プラズマ化したエッチングガスを用いて、処理チャンバ内に配置された基台上に載置されるワイドギャップ半導体基板をエッチングし、該ワイドギャップ半導体基板にテーパ状のエッチング構造を形成するプラズマエッチングする方法であって、
前記ワイドギャップ半導体基板の表面に開口部を有するマスクを形成する工程と、
前記エッチングガス及び保護膜形成ガスを前記処理チャンバ内に供給し、該エッチングガス及び保護膜形成ガスをプラズマ化する工程と、
前記ワイドギャップ半導体基板が載置された基台にバイアス電位を印加して、前記ワイドギャップ半導体基板をエッチングする工程とを行うプラズマエッチング方法において、
前記保護膜形成ガスの供給流量を調整することにより、形成されるエッチング構造のテーパ状態を制御することを特徴とするプラズマエッチング方法に係る。
11 処理チャンバ
15 基台
20 ガス供給装置
21 エッチングガス供給部
22 保護膜形成ガス
23 不活性ガス供給部
25 プラズマ生成装置
26 コイル
27 高周波電源
30 高周波電源
35 排気装置
K 炭化ケイ素基板(ワイドギャップ半導体基板)
M Niマスク(マスク)
H 保護膜
Claims (7)
- プラズマ化したエッチングガスを用いて、処理チャンバ内に配置された基台上に載置されるワイドギャップ半導体基板をエッチングし、該ワイドギャップ半導体基板にテーパ状のエッチング構造を形成するプラズマエッチングする方法であって、
前記ワイドギャップ半導体基板の表面に開口部を有するマスクを形成する工程と、
前記エッチングガス及び保護膜形成ガスを前記処理チャンバ内に供給し、該エッチングガス及び保護膜形成ガスをプラズマ化する工程と、
前記ワイドギャップ半導体基板が載置された基台にバイアス電位を印加して、前記ワイドギャップ半導体基板をエッチングする工程とを行うプラズマエッチング方法において、
前記保護膜形成ガスの供給流量を調整することにより、形成されるエッチング構造のテーパ状態を制御し、
前記エッチングガスは六フッ化硫黄ガスであり、前記保護膜形成ガスは酸素ガスであり、
前記六フッ化硫黄ガスを100〜1000sccmの流量で処理チャンバ内に供給するとともに、前記酸素ガスを、六フッ化硫黄ガスの流量に対して50〜100%の流量で処理チャンバ内に供給するようにしたことを特徴とするプラズマエッチング方法。 - 前記ワイドギャップ半導体基板は、炭化ケイ素から構成された基板であることを特徴とする請求項1記載のプラズマエッチング方法。
- 前記マスクは、ニッケル、或いは、二酸化ケイ素から構成されてなることを特徴とする請求項1又は2記載のプラズマエッチング方法。
- 前記ワイドギャップ半導体基板をエッチングする工程を行うよりも前に、前記基台上に載置したワイドギャップ半導体基板を加熱する工程を更に行うことを特徴とする請求項1乃至3記載のプラズマエッチング方法。
- 前記ワイドギャップ半導体基板を加熱する工程において、前記ワイドギャップ半導体基板を200℃以上に加熱することを特徴とする請求項4記載のプラズマエッチング方法。
- テーパ角度が70〜75°のエッチング構造を形成するようにしたことを特徴とする請求項1乃至5記載のいずれかのプラズマエッチング方法。
- 前記処理チャンバ内に供給するガスは、フッ化炭素系ガスを含まないことを特徴とする請求項1乃至6記載のプラズマエッチング方法。
Priority Applications (3)
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JP2011207114A JP5877982B2 (ja) | 2011-09-22 | 2011-09-22 | プラズマエッチング方法 |
PCT/JP2012/070832 WO2013042497A1 (ja) | 2011-09-22 | 2012-08-16 | プラズマエッチング方法 |
TW101130461A TW201316404A (zh) | 2011-09-22 | 2012-08-22 | 電漿蝕刻方法 |
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JP2011207114A JP5877982B2 (ja) | 2011-09-22 | 2011-09-22 | プラズマエッチング方法 |
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JP2013069848A JP2013069848A (ja) | 2013-04-18 |
JP2013069848A5 JP2013069848A5 (ja) | 2014-07-31 |
JP5877982B2 true JP5877982B2 (ja) | 2016-03-08 |
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TW (1) | TW201316404A (ja) |
WO (1) | WO2013042497A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5889368B2 (ja) * | 2013-09-05 | 2016-03-22 | Sppテクノロジーズ株式会社 | プラズマエッチング方法 |
JP5967488B2 (ja) * | 2013-11-18 | 2016-08-10 | パナソニックIpマネジメント株式会社 | SiC基板のエッチング方法 |
WO2015151153A1 (ja) | 2014-03-31 | 2015-10-08 | Sppテクノロジーズ株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP6279498B2 (ja) * | 2015-02-03 | 2018-02-14 | Sppテクノロジーズ株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP6561804B2 (ja) * | 2015-12-03 | 2019-08-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP7022651B2 (ja) * | 2018-05-28 | 2022-02-18 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
JP7231683B1 (ja) | 2021-08-30 | 2023-03-01 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
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JPH03196624A (ja) * | 1989-12-26 | 1991-08-28 | Sony Corp | ドライエッチング方法 |
JPH04261017A (ja) * | 1991-02-14 | 1992-09-17 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板の製造方法 |
JP2002203841A (ja) * | 2001-01-05 | 2002-07-19 | Matsushita Electric Ind Co Ltd | 薄膜の加工方法と薄膜トランジスタの製造方法および高密度プラズマエッチング装置 |
JP5037766B2 (ja) * | 2001-09-10 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4781106B2 (ja) * | 2003-06-13 | 2011-09-28 | 住友精密工業株式会社 | シリコンエッチング方法及び装置並びにエッチングシリコン体 |
JP4672318B2 (ja) * | 2004-09-22 | 2011-04-20 | 東京エレクトロン株式会社 | エッチング方法 |
EP1786027A3 (en) * | 2005-11-14 | 2009-03-04 | Schott AG | Plasma etching of tapered structures |
JP5061506B2 (ja) * | 2006-06-05 | 2012-10-31 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP2008135534A (ja) * | 2006-11-28 | 2008-06-12 | Toyota Motor Corp | 有底の溝を有する半導体基板の製造方法 |
JP2008205436A (ja) * | 2007-01-26 | 2008-09-04 | Toshiba Corp | 微細構造体の製造方法 |
JP5154260B2 (ja) * | 2008-02-26 | 2013-02-27 | パナソニック株式会社 | ドライエッチング方法及びドライエッチング装置 |
JP5179455B2 (ja) * | 2009-10-27 | 2013-04-10 | Sppテクノロジーズ株式会社 | プラズマエッチング方法 |
JP5187705B2 (ja) * | 2011-01-07 | 2013-04-24 | 独立行政法人科学技術振興機構 | 異方性エッチング方法、三次元構造体、及び、デバイス |
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2011
- 2011-09-22 JP JP2011207114A patent/JP5877982B2/ja active Active
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2012
- 2012-08-16 WO PCT/JP2012/070832 patent/WO2013042497A1/ja active Application Filing
- 2012-08-22 TW TW101130461A patent/TW201316404A/zh unknown
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JP2013069848A (ja) | 2013-04-18 |
TW201316404A (zh) | 2013-04-16 |
WO2013042497A1 (ja) | 2013-03-28 |
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