JP6561804B2 - 半導体装置の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 26
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- 238000000034 method Methods 0.000 claims description 21
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- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000002195 soluble material Substances 0.000 claims description 3
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Description
図1から図5は、本発明の実施の形態1に係る半導体装置の製造方法を示す断面図である。まず、図1に示すように、SiC基板1の表面にGaNエピ層2をエピタキシャル成長させてGaNonSiC基板を形成する。GaNエピ層2上にソース電極3を形成する。
図6から図8は、本発明の実施の形態2に係る半導体装置の製造方法を示す断面図である。本実施の形態は実施の形態1に支持基板を用いたより現実のGaNonSiCのバイアホール加工形態に沿ったものである。
Claims (12)
- SiC基板の第1の主面にレジスト剥離層を形成する工程と、
前記レジスト剥離層上に、200℃以上で形状が崩れないレジストを塗布する工程と、
フォトリソグラフィにより前記レジストをパターニングする工程と、
前記SiC基板を載せたステージを温調機能によって200℃以上に加熱し、パターニングした前記レジストをマスクとして用いて前記SiC基板をドライエッチングしてバイアホールを形成する工程と、
前記バイアホールを形成した後に、前記レジスト剥離層を除去して前記SiC基板から前記レジストを剥離する工程とを備えることを特徴とする半導体装置の製造方法。 - 前記SiC基板の前記第1の主面に対向する第2の主面に基板剥離層を形成する工程と、
前記基板剥離層上に接着材を塗布する工程と、
200℃以上で前記接着材を硬化させて前記SiC基板を支持基板に接着させる工程と、
前記SiC基板が前記支持基板に接着された状態で前記バイアホールを形成する工程と、
前記バイアホールを形成した後に、前記基板剥離層を除去して前記支持基板から前記SiC基板を剥離する工程とを更に備えることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記レジスト剥離層は酸に可溶な材料からなることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記基板剥離層は酸に可溶な材料からなることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記レジスト剥離層はポリシリコンであり、ドライエッチングで除去されることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記基板剥離層はポリシリコンであり、ドライエッチングで除去されることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記レジスト剥離層は200℃以上に昇温してもN−メチルピロリドンを含む溶剤で溶解できる脂肪族ポリイミド系レジストであることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記基板剥離層は200℃以上に昇温してもN−メチルピロリドンを含む溶剤で溶解できる脂肪族ポリイミド系レジストであることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記レジストは200℃以上で形状崩れが発生しないエポキシ型永久レジストであることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記接着材は200℃以上で接着力を持つエポキシ型永久レジストであることを特徴とする請求項2に記載の半導体装置の製造方法。
- SiC基板に基板剥離層を形成する工程と、
前記基板剥離層上に接着材を塗布する工程と、
200℃以上で前記接着材により前記SiC基板を支持基板に接着させる工程と、
前記支持基板に接着された前記SiC基板を載せたステージを温調機能によって200℃以上に加熱して前記SiC基板をドライエッチングしてバイアホールを形成する工程と、
前記バイアホールを形成した後に、前記基板剥離層を除去して前記支持基板から前記SiC基板を剥離する工程とを備え、
前記基板剥離層は200℃以上に昇温してもN−メチルピロリドンを含む溶剤で溶解できる脂肪族ポリイミド系レジストであることを特徴とする半導体装置の製造方法。 - SiC基板に基板剥離層を形成する工程と、
前記基板剥離層上に接着材を塗布する工程と、
200℃以上で前記接着材により前記SiC基板を支持基板に接着させる工程と、
前記支持基板に接着された前記SiC基板を載せたステージを温調機能によって200℃以上に加熱して前記SiC基板をドライエッチングしてバイアホールを形成する工程と、
前記バイアホールを形成した後に、前記基板剥離層を除去して前記支持基板から前記SiC基板を剥離する工程とを備え、
前記接着材は200℃以上で接着力を持つエポキシ型永久レジストであることを特徴とする半導体装置の製造方法。
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JP2015236851A JP6561804B2 (ja) | 2015-12-03 | 2015-12-03 | 半導体装置の製造方法 |
TW105135229A TWI623078B (zh) | 2015-12-03 | 2016-10-31 | 半導體裝置的製造方法 |
US15/338,775 US9805978B2 (en) | 2015-12-03 | 2016-10-31 | Method of manufacturing semiconductor device |
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JPS63204727A (ja) * | 1987-02-20 | 1988-08-24 | Fujitsu Ltd | パタ−ン形成方法 |
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JP2009076786A (ja) | 2007-09-21 | 2009-04-09 | Fujifilm Corp | プラズマエッチング方法及びプラズマエッチング装置 |
JP5868574B2 (ja) | 2010-03-15 | 2016-02-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP5877982B2 (ja) * | 2011-09-22 | 2016-03-08 | Sppテクノロジーズ株式会社 | プラズマエッチング方法 |
JP5978600B2 (ja) * | 2011-11-21 | 2016-08-24 | 富士通株式会社 | 半導体装置の製造方法 |
JP2012054616A (ja) | 2011-12-14 | 2012-03-15 | Sumitomo Precision Prod Co Ltd | プラズマエッチング方法 |
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