JP5228381B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5228381B2 JP5228381B2 JP2007166597A JP2007166597A JP5228381B2 JP 5228381 B2 JP5228381 B2 JP 5228381B2 JP 2007166597 A JP2007166597 A JP 2007166597A JP 2007166597 A JP2007166597 A JP 2007166597A JP 5228381 B2 JP5228381 B2 JP 5228381B2
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- silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
以下、本発明の実施の形態1に係る半導体装置の製造方法について図面を用いて説明する。
以下、本発明の実施の形態2に係る半導体装置の製造方法について図面を用いて説明する。
12 アルミ窒化ガリウム/窒化ガリウム層(III−V族窒化物半導体層)
14 表面バイアホール
15 金属層
18 裏面バイアホール
Claims (5)
- 炭化ケイ素基板の表面にIII−V族窒化物半導体層を形成する工程と、
第1のガスを用いて表面側から前記III−V族窒化物半導体層を選択的にドライエッチングして貫通させた後に、第2のガスを用いて表面側から前記炭化ケイ素基板の途中までドライエッチングすることで表面バイアホールを形成する工程と、
前記第2のガスを用いて、裏面側から前記炭化ケイ素基板を選択的にドライエッチングすることで、前記表面バイアホールに繋がる裏面バイアホールを形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記裏面バイアホールを形成する前に、前記表面バイアホールを金属層で被覆する工程を更に有することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記裏面バイアホールの径を前記表面バイアホールの径よりも大きくすることを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記第1のガス、前記第2のガスは、それぞれ塩素系ガス、弗素系ガスであることを特徴とする請求項1〜3の何れか1項に記載の半導体装置の製造方法。
- 前記弗素系ガスとして側壁保護効果を有さないものを用いることを特徴とする請求項4に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007166597A JP5228381B2 (ja) | 2007-06-25 | 2007-06-25 | 半導体装置の製造方法 |
US11/935,494 US7544611B2 (en) | 2007-06-25 | 2007-11-06 | Method of manufacturing III-V nitride semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007166597A JP5228381B2 (ja) | 2007-06-25 | 2007-06-25 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009004703A JP2009004703A (ja) | 2009-01-08 |
JP5228381B2 true JP5228381B2 (ja) | 2013-07-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007166597A Active JP5228381B2 (ja) | 2007-06-25 | 2007-06-25 | 半導体装置の製造方法 |
Country Status (2)
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US (1) | US7544611B2 (ja) |
JP (1) | JP5228381B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5228381B2 (ja) * | 2007-06-25 | 2013-07-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP5298559B2 (ja) * | 2007-06-29 | 2013-09-25 | 富士通株式会社 | 半導体装置及びその製造方法 |
WO2016210315A1 (en) | 2015-06-25 | 2016-12-29 | Accelerated Ag Technologies, Llc | Seed production |
CN108288605A (zh) * | 2018-02-28 | 2018-07-17 | 中国电子科技集团公司第十三研究所 | Si基GaN器件的通孔制备方法 |
US11362024B2 (en) * | 2018-05-30 | 2022-06-14 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device and method of manufacturing the same |
JP7070848B2 (ja) * | 2018-07-26 | 2022-05-18 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60161651A (ja) | 1984-02-02 | 1985-08-23 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH07161690A (ja) * | 1993-12-09 | 1995-06-23 | Toshiba Corp | 炭化珪素体のエッチング方法 |
JP4264992B2 (ja) | 1997-05-28 | 2009-05-20 | ソニー株式会社 | 半導体装置の製造方法 |
US6239033B1 (en) | 1998-05-28 | 2001-05-29 | Sony Corporation | Manufacturing method of semiconductor device |
JP2001077128A (ja) | 1999-09-07 | 2001-03-23 | Hitachi Ltd | 高周波モジュール |
US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
FR2859312B1 (fr) * | 2003-09-02 | 2006-02-17 | Soitec Silicon On Insulator | Scellement metallique multifonction |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
JP2006237056A (ja) * | 2005-02-22 | 2006-09-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
DE102005042074A1 (de) * | 2005-08-31 | 2007-03-08 | Forschungsverbund Berlin E.V. | Verfahren zur Erzeugung von Durchkontaktierungen in Halbleiterwafern |
JP2007128994A (ja) * | 2005-11-02 | 2007-05-24 | New Japan Radio Co Ltd | 半導体装置 |
EP1972008B1 (en) * | 2006-01-10 | 2020-05-13 | Cree, Inc. | Silicon carbide dimpled substrate |
JP5091445B2 (ja) * | 2006-09-15 | 2012-12-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP5228381B2 (ja) * | 2007-06-25 | 2013-07-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
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2007
- 2007-06-25 JP JP2007166597A patent/JP5228381B2/ja active Active
- 2007-11-06 US US11/935,494 patent/US7544611B2/en active Active
Also Published As
Publication number | Publication date |
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US7544611B2 (en) | 2009-06-09 |
JP2009004703A (ja) | 2009-01-08 |
US20080318422A1 (en) | 2008-12-25 |
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