JP5607881B2 - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP5607881B2 JP5607881B2 JP2008332374A JP2008332374A JP5607881B2 JP 5607881 B2 JP5607881 B2 JP 5607881B2 JP 2008332374 A JP2008332374 A JP 2008332374A JP 2008332374 A JP2008332374 A JP 2008332374A JP 5607881 B2 JP5607881 B2 JP 5607881B2
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- gas
- layer
- etching
- substrate processing
- deposition
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- 239000000758 substrate Substances 0.000 title claims description 70
- 238000003672 processing method Methods 0.000 title claims description 38
- 239000007789 gas Substances 0.000 claims description 171
- 238000005530 etching Methods 0.000 claims description 73
- 229910052710 silicon Inorganic materials 0.000 claims description 72
- 239000010703 silicon Substances 0.000 claims description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 238000012545 processing Methods 0.000 claims description 71
- 238000000151 deposition Methods 0.000 claims description 63
- 230000008021 deposition Effects 0.000 claims description 53
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 45
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 42
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 14
- 229910001882 dioxygen Inorganic materials 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 36
- 230000001965 increasing effect Effects 0.000 description 13
- 238000012546 transfer Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 8
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 8
- 229910052794 bromium Inorganic materials 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000012805 post-processing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 229910003691 SiBr Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Description
25 プロセスモジュール
61、71 シリコン層
62、72 SiO2層
64、74 開口部
65、75 デポ
66 トレンチ(DT)
76 トレンチ
77 トレンチ(DT)
Claims (6)
- マスク層としての酸化膜と、処理対象層としてのシリコン層を有する基板を処理する基板処理方法において、
NF3ガス、HBrガス及び酸素ガスの混合ガスから生成されたプラズマによって前記シリコン層をエッチングするエッチングステップと、
HBrガス、酸素ガス及びSiCl4ガスの混合ガスから生成されたプラズマによって前記酸化膜表面にデポを堆積させるデポジションステップとを有し、
前記エッチングステップと前記デポジションステップを交互に繰り返すことを特徴とする基板処理方法。 - 前記デポジションステップにおける前記SiCl4ガスの流量を、全処理ガス流量に対して0.8〜4.5%に調整することを特徴とする請求項1記載の基板処理方法。
- 前記エッチングステップにおける処理時間は、30〜180secであり、前記デポジションステップにおける処理時間は、15〜60secであることを特徴とする請求項1又は2記載の基板処理方法。
- 前記デポジションエッチングステップ又は前記デポジションステップにおいて、さらに酸素ガスを添加して前記デポの堆積を促進させることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理方法。
- 前記基板に対する処理は、前記基板を収容する密閉容器内で行われ、前記デポジションエッチングステップ及び前記デポジションステップにおける前記密閉容器内の圧力を40mTorr(5.32Pa)〜300mTorr(3.99×10Pa)に調整することを特徴とする請求項1乃至4のいずれか1項に記載の基板処理方法。
- 前記酸化膜は、SiO2膜であることを特徴とする請求項1乃至5のいずれか1項に記載の基板処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008332374A JP5607881B2 (ja) | 2008-12-26 | 2008-12-26 | 基板処理方法 |
TW098144479A TWI494998B (zh) | 2008-12-26 | 2009-12-23 | Substrate handling method |
KR1020090130963A KR101523107B1 (ko) | 2008-12-26 | 2009-12-24 | 기판 처리 방법 |
US12/647,206 US8232207B2 (en) | 2008-12-26 | 2009-12-24 | Substrate processing method |
CN2009102655242A CN101770946B (zh) | 2008-12-26 | 2009-12-25 | 基板处理方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008332374A JP5607881B2 (ja) | 2008-12-26 | 2008-12-26 | 基板処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010153702A JP2010153702A (ja) | 2010-07-08 |
JP5607881B2 true JP5607881B2 (ja) | 2014-10-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008332374A Active JP5607881B2 (ja) | 2008-12-26 | 2008-12-26 | 基板処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8232207B2 (ja) |
JP (1) | JP5607881B2 (ja) |
KR (1) | KR101523107B1 (ja) |
CN (1) | CN101770946B (ja) |
TW (1) | TWI494998B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8313661B2 (en) * | 2009-11-09 | 2012-11-20 | Tokyo Electron Limited | Deep trench liner removal process |
WO2012008179A1 (ja) * | 2010-07-12 | 2012-01-19 | 住友精密工業株式会社 | エッチング方法 |
JP5698558B2 (ja) | 2011-02-21 | 2015-04-08 | 東京エレクトロン株式会社 | 基板処理方法及び記憶媒体 |
JP2014003085A (ja) * | 2012-06-15 | 2014-01-09 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマ処理装置 |
JP6096438B2 (ja) * | 2012-08-27 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
US9865471B2 (en) * | 2015-04-30 | 2018-01-09 | Tokyo Electron Limited | Etching method and etching apparatus |
JP7037397B2 (ja) * | 2018-03-16 | 2022-03-16 | キオクシア株式会社 | 基板処理装置、基板処理方法、および半導体装置の製造方法 |
US20200135898A1 (en) * | 2018-10-30 | 2020-04-30 | International Business Machines Corporation | Hard mask replenishment for etching processes |
JP7339032B2 (ja) * | 2019-06-28 | 2023-09-05 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP7296912B2 (ja) | 2020-04-07 | 2023-06-23 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2022140924A (ja) * | 2021-03-15 | 2022-09-29 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Family Cites Families (10)
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JP2734915B2 (ja) * | 1992-11-18 | 1998-04-02 | 株式会社デンソー | 半導体のドライエッチング方法 |
JP2720785B2 (ja) * | 1994-02-22 | 1998-03-04 | 日本電気株式会社 | 半導体装置の製造方法 |
WO1999052135A1 (en) | 1998-04-02 | 1999-10-14 | Applied Materials, Inc. | Method for etching low k dielectrics |
US6318384B1 (en) * | 1999-09-24 | 2001-11-20 | Applied Materials, Inc. | Self cleaning method of forming deep trenches in silicon substrates |
JP2003056617A (ja) | 2001-08-20 | 2003-02-26 | Nissan Motor Co Ltd | 衝撃エネルギ吸収構造部材 |
US6833325B2 (en) * | 2002-10-11 | 2004-12-21 | Lam Research Corporation | Method for plasma etching performance enhancement |
US7186660B2 (en) * | 2003-01-08 | 2007-03-06 | International Business Machines Corporation | Silicon precursors for deep trench silicon etch processes |
JP2004349493A (ja) * | 2003-05-22 | 2004-12-09 | Canon Inc | 膜厚調整装置及びsoi基板の製造方法 |
US7141505B2 (en) * | 2003-06-27 | 2006-11-28 | Lam Research Corporation | Method for bilayer resist plasma etch |
US7932181B2 (en) * | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
-
2008
- 2008-12-26 JP JP2008332374A patent/JP5607881B2/ja active Active
-
2009
- 2009-12-23 TW TW098144479A patent/TWI494998B/zh active
- 2009-12-24 US US12/647,206 patent/US8232207B2/en active Active
- 2009-12-24 KR KR1020090130963A patent/KR101523107B1/ko active IP Right Grant
- 2009-12-25 CN CN2009102655242A patent/CN101770946B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN101770946A (zh) | 2010-07-07 |
TWI494998B (zh) | 2015-08-01 |
TW201041033A (en) | 2010-11-16 |
US20100167549A1 (en) | 2010-07-01 |
US8232207B2 (en) | 2012-07-31 |
JP2010153702A (ja) | 2010-07-08 |
KR20100076909A (ko) | 2010-07-06 |
CN101770946B (zh) | 2013-02-27 |
KR101523107B1 (ko) | 2015-05-26 |
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