JP2013046070A - 半導体装置を形成するための方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 140
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 239000007789 gas Substances 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 42
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 28
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 28
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000001301 oxygen Substances 0.000 claims abstract description 22
- 229910052786 argon Inorganic materials 0.000 claims abstract description 15
- 229910052734 helium Inorganic materials 0.000 claims abstract description 15
- 239000001307 helium Substances 0.000 claims abstract description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000000630 rising effect Effects 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 6
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 23
- 229910052799 carbon Inorganic materials 0.000 description 23
- 230000008021 deposition Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- XNMQEEKYCVKGBD-UHFFFAOYSA-N 2-butyne Chemical compound CC#CC XNMQEEKYCVKGBD-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
【解決手段】 本方法は、プロセスチャンバ内の基板ホルダ上に基板を準備し、前記基板が、上部表面と側壁表面を持つ立ち上がり構造を含み;前記プロセスチャンバ内にプロセスガスを流し、前記プロセスガスが炭化水素ガス、酸素含有ガス、及び場合によりアルゴン又はヘリウムを含む。本方法はさらに、プロセスチャンバ内のプロセスガス圧力を少なくとも1トールに維持し、マイクロ波プラズマ源を用いてプロセスガスからプラズマを形成し、及び基板をプラズマに暴露して共形アモルファスカーボンフィルムを前記立ち上がり構造の表面上に堆積させることを含む。
【選択図】 図2
Description
当業者には、前記教示に照らして多くの修正、変更が可能であるということが理解されるであろう。当業者は、図に示される種々の部品について、種々の均等な組合せ、置換物を認識するであろう。従って、本発明の範囲は開示された詳細な説明に限定されるものではなく、添付の特許請求の範囲で限定されるものである、ということが意図される。
Claims (20)
- 半導体装置を形成するための方法であり、前記方法は:
プロセスチャンバ内の基板ホルダ上に基板を準備し、前記基板が、上部表面と側壁表面を持つ立ち上がり構造を含み;
前記プロセスチャンバ内にプロセスガスを流し、前記プロセスガスが炭化水素ガス、酸素含有ガス、及び場合によりアルゴン又はヘリウムを含み;
前記プロセスチャンバ内のプロセスガス圧力を少なくとも1トールに維持し;
マイクロ波プラズマ源を用いて前記プロセスガスからプラズマを形成し;及び
前記基板を前記プラズマに曝露して前記立ち上がり構造の表面上に共形アモルファスカーボンフィルムを堆積させ、前記上部表面上の前記共形アモルファスカーボンフィルムの厚さと、前記側壁表面上の前記共形アモルファスカーボンフィルムの厚さとの比(d(上部)/d(側壁))が、2未満である、方法。 - 請求項1に記載の方法であり、さらに、前記曝露の際に、高周波数(RF)バイアス電力を前記基板に適用する、方法。
- 請求項1に記載の方法であり、前記プロセスチャンバ内の前記プロセスガスの圧力が。1トールと5トールとの間である、方法。
- 請求項1に記載の方法であり、さらに、基板ホルダの温度を200℃未満に維持する、方法。
- 請求項1に記載の方法であり、プラズマの形成が、前記基板に面するラジアルラインスロットアンテナ(RLSA)を含む前記マイクロ波プラズマ源により前記プロセスガスを励起することを含む、方法。
- 請求項1に記載の方法であり、前記炭化水素ガスが、プラズマ励起で開裂されない炭素−炭素三重結合を含む、方法。
- 請求項1に記載の方法であり、前記炭化水素ガスが、C4H4、C4H6、C6H6又はそれらの組合せを含む、方法。
- 請求項1に記載の方法であり、前記酸素含有ガスが、O2、H2O又はO2とH2Oの両方を含む、方法。
- 請求項1に記載の方法であり、前記プロセスガスが、C4H6ガス、O2及び場合によりアルゴン又はヘリウムを含む、方法。
- 請求項1に記載の方法であり、前記d(上部)/d(側壁)値が1.4未満である、方法。
- 請求項1に記載の方法であり、さらに:前記共形アモルファスカーボンフィルムをエッチングしてパターン化ハードマスクを形成する、方法。
- 請求項1に記載の方法であり、前記プロセスガスを流すことが、酸素含有ガス及び場合によりアルゴン又はヘリウムの連続フロー及び前記炭化水素のパルスフローを含む、方法。
- 請求項1に記載の方法であり、前記プロセスガスを流すことが、前記炭化水素ガス、前記酸素含有ガス、及び場合によりアルゴン又はヘリウムを連続的にフローすることを含む、方法。
- 半導体装置を形成するための方法であり、前記方法は:
プロセスチャンバ内の基板ホルダ上に基板を準備し、前記基板が、上部表面と側壁表面を持つ立ち上がり構造を含み;
前記プロセスチャンバ内にプロセスガスを流し、前記プロセスガスが酸素含有ガス、及び場合によりアルゴン又はヘリウムの連続フロー、及び炭化水素ガスのパルスフロー含み;
前記プロセスチャンバ内のプロセスガスの圧力を少なくとも1トールに維持し;
前記基板に面するラジアルラインスロットアンテナ(RLSA)を含むマイクロ波プラズマ源を用いて前記プロセスガスからプラズマを形成し、前記炭化水素ガスが、プラズマ励起では開裂されない炭素−炭素三重結合を含み;及び
前記基板を前記プラズマに曝露して前記立ち上がり構造の表面上に共形アモルファスカーボンフィルムを堆積させ、前記上部表面上の前記共形アモルファスカーボンフィルムの厚さと、前記側壁表面上の前記共形アモルファスカーボンフィルムの厚さとの比(d(上部)/d(側壁))が、2未満である、方法。 - 請求項14に記載の方法であり、さらに、前記曝露の際に前記基板ホルダへ高周波数(RF)バイアス電力を適用する、方法。
- 請求項14に記載の方法であり、前記プロセスチャンバ内のプロセスガスのプロセスガス圧力が1トールと5トールとの間である、方法。
- 請求項14に記載の方法であり、さらに、前記基板温度を200℃未満に維持することを含む、方法。
- 請求項14に記載の方法であり、前記酸素含有ガスが、O2、H2O又はO2及びH2Oの両方を含む、方法。
- 請求項14に記載の方法であり、前記プロセスガスが、C4H6ガス、O2、及び場合によりアルゴン又はヘリウムを含む、方法。
- 請求項14に記載の方法であり、前記d(上部)/d(側壁)値が1.4未満である、方法。
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US13/217,813 US8399366B1 (en) | 2011-08-25 | 2011-08-25 | Method of depositing highly conformal amorphous carbon films over raised features |
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SG11202009289PA (en) * | 2018-05-03 | 2020-11-27 | Applied Materials Inc | Pulsed plasma (dc/rf) deposition of high quality c films for patterning |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
CN108735570B (zh) * | 2018-05-25 | 2019-06-18 | 中国科学院微电子研究所 | 用于SiC等离子体氧化的微波等离子体发生装置 |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007224383A (ja) * | 2006-02-24 | 2007-09-06 | Tokyo Electron Ltd | アモルファスカーボン膜の成膜方法、それを用いた半導体装置の製造方法、およびコンピュータ読取可能な記憶媒体 |
JP2008502146A (ja) * | 2004-06-03 | 2008-01-24 | ラム リサーチ コーポレーション | ガス化学反応および炭化水素付加の周期的変調を用いたプラズマストリッピング方法 |
US7842622B1 (en) * | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
WO2010151337A1 (en) * | 2009-06-26 | 2010-12-29 | Tokyo Electron Limited | Improving the adhesiveness of fluorocarbon(cfx) film by doping of amorphous carbon |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7638440B2 (en) | 2004-03-12 | 2009-12-29 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
US20070286954A1 (en) * | 2006-06-13 | 2007-12-13 | Applied Materials, Inc. | Methods for low temperature deposition of an amorphous carbon layer |
US20080153311A1 (en) * | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
KR101025821B1 (ko) | 2006-07-05 | 2011-03-30 | 도쿄엘렉트론가부시키가이샤 | 아모퍼스 카본막의 후처리 방법, 이를 이용한 반도체 장치의 제조 방법 및, 제어 프로그램이 기억된 컴퓨터 판독가능한 기억 매체 |
JP5200371B2 (ja) | 2006-12-01 | 2013-06-05 | 東京エレクトロン株式会社 | 成膜方法、半導体装置及び記憶媒体 |
KR101102422B1 (ko) * | 2007-02-28 | 2012-01-05 | 도쿄엘렉트론가부시키가이샤 | 비결정 탄소막의 형성 방법, 비결정 탄소막, 다층 레지스트막, 반도체 장치의 제조 방법 및 컴퓨터 가독 기억 매체 |
JP5297885B2 (ja) * | 2008-06-18 | 2013-09-25 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008502146A (ja) * | 2004-06-03 | 2008-01-24 | ラム リサーチ コーポレーション | ガス化学反応および炭化水素付加の周期的変調を用いたプラズマストリッピング方法 |
JP2007224383A (ja) * | 2006-02-24 | 2007-09-06 | Tokyo Electron Ltd | アモルファスカーボン膜の成膜方法、それを用いた半導体装置の製造方法、およびコンピュータ読取可能な記憶媒体 |
US7842622B1 (en) * | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
WO2010151337A1 (en) * | 2009-06-26 | 2010-12-29 | Tokyo Electron Limited | Improving the adhesiveness of fluorocarbon(cfx) film by doping of amorphous carbon |
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TW201316380A (zh) | 2013-04-16 |
TWI496193B (zh) | 2015-08-11 |
KR20130022378A (ko) | 2013-03-06 |
US8399366B1 (en) | 2013-03-19 |
CN102956473B (zh) | 2015-07-29 |
CN102956473A (zh) | 2013-03-06 |
KR101921336B1 (ko) | 2018-11-22 |
JP6010387B2 (ja) | 2016-10-19 |
US20130052808A1 (en) | 2013-02-28 |
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