TWI496193B - 在隆起之特徵部上沉積高度保形之非晶碳膜的方法 - Google Patents
在隆起之特徵部上沉積高度保形之非晶碳膜的方法 Download PDFInfo
- Publication number
- TWI496193B TWI496193B TW101130665A TW101130665A TWI496193B TW I496193 B TWI496193 B TW I496193B TW 101130665 A TW101130665 A TW 101130665A TW 101130665 A TW101130665 A TW 101130665A TW I496193 B TWI496193 B TW I496193B
- Authority
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- Taiwan
- Prior art keywords
- forming
- semiconductor device
- gas
- plasma
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 76
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims description 41
- 238000000151 deposition Methods 0.000 title claims description 29
- 239000007789 gas Substances 0.000 claims description 174
- 239000000758 substrate Substances 0.000 claims description 64
- 239000004215 Carbon black (E152) Substances 0.000 claims description 29
- 229930195733 hydrocarbon Natural products 0.000 claims description 29
- 150000002430 hydrocarbons Chemical class 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 230000005855 radiation Effects 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 229910052734 helium Inorganic materials 0.000 claims description 10
- 239000001307 helium Substances 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 5
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 229910052799 carbon Inorganic materials 0.000 description 19
- 230000008021 deposition Effects 0.000 description 14
- 239000004020 conductor Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- XNMQEEKYCVKGBD-UHFFFAOYSA-N 2-butyne Chemical compound CC#CC XNMQEEKYCVKGBD-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/217,813 US8399366B1 (en) | 2011-08-25 | 2011-08-25 | Method of depositing highly conformal amorphous carbon films over raised features |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201316380A TW201316380A (zh) | 2013-04-16 |
| TWI496193B true TWI496193B (zh) | 2015-08-11 |
Family
ID=47744307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101130665A TWI496193B (zh) | 2011-08-25 | 2012-08-23 | 在隆起之特徵部上沉積高度保形之非晶碳膜的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8399366B1 (enExample) |
| JP (1) | JP6010387B2 (enExample) |
| KR (1) | KR101921336B1 (enExample) |
| CN (1) | CN102956473B (enExample) |
| TW (1) | TWI496193B (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107437547B (zh) * | 2016-05-26 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制作方法 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| KR20240097984A (ko) * | 2018-05-03 | 2024-06-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| CN108735570B (zh) * | 2018-05-25 | 2019-06-18 | 中国科学院微电子研究所 | 用于SiC等离子体氧化的微波等离子体发生装置 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| KR20220030249A (ko) * | 2019-06-24 | 2022-03-10 | 램 리써치 코포레이션 | 선택적 탄소 증착 |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US12198928B2 (en) | 2021-10-22 | 2025-01-14 | Applied Materials, Inc. | Carbon gap fill processes |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| WO2025208079A1 (en) * | 2024-03-29 | 2025-10-02 | Lam Research Corporation | Temporal switching to achieve geometric selective deposition of carbon in patterned features |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050202683A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
| US20070286954A1 (en) * | 2006-06-13 | 2007-12-13 | Applied Materials, Inc. | Methods for low temperature deposition of an amorphous carbon layer |
| TW200807498A (en) * | 2006-02-24 | 2008-02-01 | Tokyo Electron Ltd | Method for forming amorphous carbon film, method for producing semiconductor device using the same and computer readable storage medium |
| US20080153311A1 (en) * | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
| US20100032838A1 (en) * | 2006-12-01 | 2010-02-11 | Tokyo Electron Limited | Amorphous carbon film, semiconductor device, film forming method, film forming apparatus and storage medium |
| US20100062612A1 (en) * | 2006-07-05 | 2010-03-11 | Tokyo Electron Limited | Aftertreatment Method for Amorphous Carbon Film |
| US7842622B1 (en) * | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7294580B2 (en) * | 2003-04-09 | 2007-11-13 | Lam Research Corporation | Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition |
| CN101622693B (zh) * | 2007-02-28 | 2012-07-04 | 东京毅力科创株式会社 | 无定形碳膜的形成方法和半导体装置的制造方法 |
| JP5297885B2 (ja) * | 2008-06-18 | 2013-09-25 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| JP5710606B2 (ja) * | 2009-06-26 | 2015-04-30 | 東京エレクトロン株式会社 | アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善 |
-
2011
- 2011-08-25 US US13/217,813 patent/US8399366B1/en not_active Expired - Fee Related
-
2012
- 2012-08-21 JP JP2012182159A patent/JP6010387B2/ja not_active Expired - Fee Related
- 2012-08-22 KR KR1020120091781A patent/KR101921336B1/ko not_active Expired - Fee Related
- 2012-08-23 TW TW101130665A patent/TWI496193B/zh not_active IP Right Cessation
- 2012-08-27 CN CN201210315731.6A patent/CN102956473B/zh not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050202683A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
| TW200807498A (en) * | 2006-02-24 | 2008-02-01 | Tokyo Electron Ltd | Method for forming amorphous carbon film, method for producing semiconductor device using the same and computer readable storage medium |
| US20070286954A1 (en) * | 2006-06-13 | 2007-12-13 | Applied Materials, Inc. | Methods for low temperature deposition of an amorphous carbon layer |
| US20080153311A1 (en) * | 2006-06-28 | 2008-06-26 | Deenesh Padhi | Method for depositing an amorphous carbon film with improved density and step coverage |
| US20100062612A1 (en) * | 2006-07-05 | 2010-03-11 | Tokyo Electron Limited | Aftertreatment Method for Amorphous Carbon Film |
| US20100032838A1 (en) * | 2006-12-01 | 2010-02-11 | Tokyo Electron Limited | Amorphous carbon film, semiconductor device, film forming method, film forming apparatus and storage medium |
| US7842622B1 (en) * | 2009-05-15 | 2010-11-30 | Asm Japan K.K. | Method of forming highly conformal amorphous carbon layer |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130022378A (ko) | 2013-03-06 |
| US8399366B1 (en) | 2013-03-19 |
| US20130052808A1 (en) | 2013-02-28 |
| KR101921336B1 (ko) | 2018-11-22 |
| TW201316380A (zh) | 2013-04-16 |
| JP6010387B2 (ja) | 2016-10-19 |
| JP2013046070A (ja) | 2013-03-04 |
| CN102956473A (zh) | 2013-03-06 |
| CN102956473B (zh) | 2015-07-29 |
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