JP2009158945A5 - - Google Patents

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Publication number
JP2009158945A5
JP2009158945A5 JP2008307037A JP2008307037A JP2009158945A5 JP 2009158945 A5 JP2009158945 A5 JP 2009158945A5 JP 2008307037 A JP2008307037 A JP 2008307037A JP 2008307037 A JP2008307037 A JP 2008307037A JP 2009158945 A5 JP2009158945 A5 JP 2009158945A5
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JP
Japan
Prior art keywords
film
gate insulating
germanium film
insulating film
thin film
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Application number
JP2008307037A
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English (en)
Japanese (ja)
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JP5395414B2 (ja
JP2009158945A (ja
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Priority to JP2008307037A priority Critical patent/JP5395414B2/ja
Priority claimed from JP2008307037A external-priority patent/JP5395414B2/ja
Publication of JP2009158945A publication Critical patent/JP2009158945A/ja
Publication of JP2009158945A5 publication Critical patent/JP2009158945A5/ja
Application granted granted Critical
Publication of JP5395414B2 publication Critical patent/JP5395414B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008307037A 2007-12-03 2008-12-02 薄膜トランジスタの作製方法 Expired - Fee Related JP5395414B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008307037A JP5395414B2 (ja) 2007-12-03 2008-12-02 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007312797 2007-12-03
JP2007312797 2007-12-03
JP2008307037A JP5395414B2 (ja) 2007-12-03 2008-12-02 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2009158945A JP2009158945A (ja) 2009-07-16
JP2009158945A5 true JP2009158945A5 (enExample) 2011-12-22
JP5395414B2 JP5395414B2 (ja) 2014-01-22

Family

ID=40674800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008307037A Expired - Fee Related JP5395414B2 (ja) 2007-12-03 2008-12-02 薄膜トランジスタの作製方法

Country Status (5)

Country Link
US (1) US20090140251A1 (enExample)
JP (1) JP5395414B2 (enExample)
KR (1) KR101551300B1 (enExample)
CN (1) CN101452961B (enExample)
TW (1) TWI521712B (enExample)

Families Citing this family (16)

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JP5527966B2 (ja) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
KR101628254B1 (ko) * 2009-09-21 2016-06-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR102138547B1 (ko) * 2009-11-13 2020-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8395156B2 (en) * 2009-11-24 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) * 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
WO2011141946A1 (ja) * 2010-05-10 2011-11-17 パナソニック株式会社 薄膜トランジスタ装置及びその製造方法
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2474643B1 (en) * 2011-01-11 2016-01-06 Imec Method for direct deposition of a germanium layer
KR101973207B1 (ko) * 2011-06-23 2019-04-29 삼성디스플레이 주식회사 금속 산화물이 함유된 양극 및 상기 양극을 포함하는 유기발광소자
EP2626917B1 (en) * 2012-02-10 2017-09-27 IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik A CMOS-compatible germanium tunable Laser
US20130280891A1 (en) * 2012-04-20 2013-10-24 Yihwan Kim Method and apparatus for germanium tin alloy formation by thermal cvd
JP6199583B2 (ja) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
KR102172972B1 (ko) 2014-02-26 2020-11-03 삼성디스플레이 주식회사 박막 트랜지스터 및 그의 제조방법
JP2018006412A (ja) * 2016-06-28 2018-01-11 学校法人東北学院 半導体装置
US11737954B1 (en) 2020-10-06 2023-08-29 Verily Life Sciences Llc Network-connected containers having medication stored therein

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US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
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JPH05175503A (ja) * 1991-10-23 1993-07-13 Kyocera Corp 薄膜トランジスタおよびその製造方法
JPH05267662A (ja) * 1992-03-19 1993-10-15 Hitachi Ltd 相補型薄膜半導体装置およびそれを用いた画像情報処理装置
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US6104042A (en) * 1999-06-10 2000-08-15 Chi Mei Optoelectronics Corp. Thin film transistor with a multi-metal structure a method of manufacturing the same
JP3356748B2 (ja) * 2000-01-21 2002-12-16 鹿児島日本電気株式会社 薄膜トランジスタの製造方法
WO2002050917A1 (en) * 2000-12-21 2002-06-27 Koninklijke Philips Electronics N.V. Thin film transistors
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JP2005005509A (ja) * 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
TWI395996B (zh) * 2003-07-14 2013-05-11 半導體能源研究所股份有限公司 半導體裝置及顯示裝置
TWI336921B (en) * 2003-07-18 2011-02-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR101029944B1 (ko) * 2003-12-30 2011-04-19 엘지디스플레이 주식회사 액정표시장치용 어레이 기판의 제조 방법
JP4557755B2 (ja) * 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法
JP4200458B2 (ja) * 2006-05-10 2008-12-24 ソニー株式会社 薄膜トランジスタの製造方法
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP2009049384A (ja) * 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
TWI464510B (zh) * 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8101444B2 (en) * 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2009105390A (ja) * 2007-10-05 2009-05-14 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR101455304B1 (ko) * 2007-10-05 2014-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법
US8030655B2 (en) * 2007-12-03 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor
US8187956B2 (en) * 2007-12-03 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
JP5527966B2 (ja) * 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ

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