JP2008098642A5 - - Google Patents

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Publication number
JP2008098642A5
JP2008098642A5 JP2007265748A JP2007265748A JP2008098642A5 JP 2008098642 A5 JP2008098642 A5 JP 2008098642A5 JP 2007265748 A JP2007265748 A JP 2007265748A JP 2007265748 A JP2007265748 A JP 2007265748A JP 2008098642 A5 JP2008098642 A5 JP 2008098642A5
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JP
Japan
Prior art keywords
metal layer
photoresist pattern
forming
film transistor
thin film
Prior art date
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Application number
JP2007265748A
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English (en)
Japanese (ja)
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JP5679397B2 (ja
JP2008098642A (ja
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Publication date
Priority claimed from KR1020060099187A external-priority patent/KR101229277B1/ko
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Publication of JP2008098642A publication Critical patent/JP2008098642A/ja
Publication of JP2008098642A5 publication Critical patent/JP2008098642A5/ja
Application granted granted Critical
Publication of JP5679397B2 publication Critical patent/JP5679397B2/ja
Active legal-status Critical Current
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JP2007265748A 2006-10-12 2007-10-11 薄膜トランジスタ基板の製造方法 Active JP5679397B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0099187 2006-10-12
KR1020060099187A KR101229277B1 (ko) 2006-10-12 2006-10-12 박막 트랜지스터 기판의 제조 방법

Publications (3)

Publication Number Publication Date
JP2008098642A JP2008098642A (ja) 2008-04-24
JP2008098642A5 true JP2008098642A5 (enExample) 2011-10-27
JP5679397B2 JP5679397B2 (ja) 2015-03-04

Family

ID=38941886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007265748A Active JP5679397B2 (ja) 2006-10-12 2007-10-11 薄膜トランジスタ基板の製造方法

Country Status (6)

Country Link
US (1) US7803673B2 (enExample)
EP (1) EP1912256A1 (enExample)
JP (1) JP5679397B2 (enExample)
KR (1) KR101229277B1 (enExample)
CN (1) CN101162710A (enExample)
TW (1) TWI423394B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070038610A (ko) * 2005-10-06 2007-04-11 삼성전자주식회사 표시 장치의 수리 장치 및 수리 방법
US8791001B2 (en) * 2008-09-08 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. N2 based plasma treatment and ash for HK metal gate protection
KR101042957B1 (ko) * 2010-03-19 2011-06-20 삼성모바일디스플레이주식회사 트랜지스터 기판, 및 이의 제조 방법
US8163620B2 (en) * 2010-04-21 2012-04-24 Institute of Microelectronics, Chinese Academy of Sciences Method for etching Mo-based metal gate stack with aluminium nitride barrier
US8329518B1 (en) * 2011-08-11 2012-12-11 Shenzhen China Star Optoelectronics Technology Co., Ltd. Methods for manufacturing thin film transistor array substrate and display panel
KR102245497B1 (ko) * 2014-08-08 2021-04-29 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6472329B1 (en) * 1999-08-16 2002-10-29 Applied Komatsu Technology, Inc. Etching aluminum over refractory metal with successive plasmas
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
TW490857B (en) 2001-02-05 2002-06-11 Samsung Electronics Co Ltd Thin film transistor array substrate for liquid crystal display and method of fabricating same
JP4603190B2 (ja) 2001-04-16 2010-12-22 株式会社日立製作所 液晶表示装置
JP4920140B2 (ja) * 2001-05-18 2012-04-18 ゲットナー・ファンデーション・エルエルシー 液晶表示装置及びその製造方法
JP4050503B2 (ja) * 2001-11-29 2008-02-20 株式会社日立製作所 表示装置
JP4221314B2 (ja) * 2004-02-10 2009-02-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとそれを用いた液晶表示装置およびその薄膜トランジスタの製造方法
KR101090252B1 (ko) * 2004-09-24 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
KR101136026B1 (ko) * 2004-09-24 2012-04-18 주식회사 동진쎄미켐 포토레지스트용 박리제 및 상기 박리제를 이용한 박막트랜지스터 표시판의 제조 방법
KR20060081470A (ko) * 2005-01-07 2006-07-13 삼성전자주식회사 박막트랜지스터 기판과 그 제조방법
KR20060089526A (ko) * 2005-02-04 2006-08-09 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법

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