JP2007027735A5 - - Google Patents

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Publication number
JP2007027735A5
JP2007027735A5 JP2006191725A JP2006191725A JP2007027735A5 JP 2007027735 A5 JP2007027735 A5 JP 2007027735A5 JP 2006191725 A JP2006191725 A JP 2006191725A JP 2006191725 A JP2006191725 A JP 2006191725A JP 2007027735 A5 JP2007027735 A5 JP 2007027735A5
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JP
Japan
Prior art keywords
conductive layer
molybdenum
thin film
film transistor
layer containing
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Application number
JP2006191725A
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English (en)
Japanese (ja)
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JP2007027735A (ja
JP5156203B2 (ja
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Publication date
Priority claimed from KR1020050062730A external-priority patent/KR101189271B1/ko
Application filed filed Critical
Publication of JP2007027735A publication Critical patent/JP2007027735A/ja
Publication of JP2007027735A5 publication Critical patent/JP2007027735A5/ja
Application granted granted Critical
Publication of JP5156203B2 publication Critical patent/JP5156203B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006191725A 2005-07-12 2006-07-12 薄膜トランジスタ表示板及びその製造方法 Expired - Fee Related JP5156203B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050062730A KR101189271B1 (ko) 2005-07-12 2005-07-12 박막 트랜지스터 표시판 및 그 제조 방법
KR10-2005-0062730 2005-07-12

Publications (3)

Publication Number Publication Date
JP2007027735A JP2007027735A (ja) 2007-02-01
JP2007027735A5 true JP2007027735A5 (enExample) 2009-08-27
JP5156203B2 JP5156203B2 (ja) 2013-03-06

Family

ID=37609731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006191725A Expired - Fee Related JP5156203B2 (ja) 2005-07-12 2006-07-12 薄膜トランジスタ表示板及びその製造方法

Country Status (5)

Country Link
US (3) US7371621B2 (enExample)
JP (1) JP5156203B2 (enExample)
KR (1) KR101189271B1 (enExample)
CN (1) CN1897285B (enExample)
TW (1) TWI402988B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5247070B2 (ja) * 2007-06-12 2013-07-24 株式会社ジャパンディスプレイウェスト 液晶表示パネル及びその製造方法
CN101593756B (zh) * 2008-05-28 2011-05-18 群康科技(深圳)有限公司 薄膜晶体管基板、薄膜晶体管基板制造方法及显示装置
US8227278B2 (en) * 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101628254B1 (ko) * 2009-09-21 2016-06-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US8785241B2 (en) * 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2693420B1 (en) * 2011-03-30 2019-05-08 Sharp Kabushiki Kaisha Active matrix substrate, display device, and active matrix substrate manufacturing method
CN102184966B (zh) * 2011-04-15 2013-02-13 福州华映视讯有限公司 晶体管数组基板
CN102508385A (zh) * 2011-11-17 2012-06-20 华映视讯（吴江）有限公司 像素结构、阵列基板及其制作方法
WO2014054487A1 (ja) * 2012-10-02 2014-04-10 シャープ株式会社 液晶パネル、及び製造方法
US20140199833A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Methods for performing a via reveal etching process for forming through-silicon vias in a substrate
CN103811327A (zh) * 2014-02-14 2014-05-21 上海和辉光电有限公司 薄膜晶体管的制作方法
CN106653772B (zh) * 2016-12-30 2019-10-01 惠科股份有限公司 一种显示面板及制程
KR102748667B1 (ko) 2019-10-30 2025-01-02 삼성디스플레이 주식회사 표시 장치, 패턴 형성 방법 및 표시 장치의 제조 방법
KR20220065949A (ko) * 2020-11-13 2022-05-23 삼성디스플레이 주식회사 표시 장치

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
US6849872B1 (en) * 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP2558995B2 (ja) * 1992-07-14 1996-11-27 松下電器産業株式会社 薄膜トランジスタの製造方法
JPH06267983A (ja) * 1993-03-16 1994-09-22 Hitachi Ltd 薄膜トランジスタ及びその製法
US5923050A (en) * 1995-02-08 1999-07-13 Samsung Electronics Co., Ltd. Amorphous silicon TFT
JPH08264790A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 薄膜電解効果トランジスタ及び液晶表示装置
KR100552283B1 (ko) 1998-01-22 2006-06-23 삼성전자주식회사 몰리브덴및몰리브덴합금을이용한박막트랜지스터기판및그제조방법
JP2000056284A (ja) 1998-08-10 2000-02-25 Toshiba Corp 液晶表示装置の製造方法
US6380558B1 (en) * 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6287899B1 (en) * 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
KR100321227B1 (ko) 2000-03-18 2004-09-07 테크노세미켐 주식회사 액정표시장치의전극용식각액
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
JP4920140B2 (ja) 2001-05-18 2012-04-18 ゲットナー・ファンデーション・エルエルシー 液晶表示装置及びその製造方法
JP3953330B2 (ja) * 2002-01-25 2007-08-08 三洋電機株式会社 表示装置
KR100870013B1 (ko) * 2002-08-27 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
JP2004119923A (ja) 2002-09-30 2004-04-15 Seiko Epson Corp 半導体装置およびその製造方法
JP4651929B2 (ja) * 2002-11-15 2011-03-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
KR100904757B1 (ko) 2002-12-30 2009-06-29 엘지디스플레이 주식회사 액정표시장치 및 그의 제조방법
KR100640211B1 (ko) * 2003-04-03 2006-10-31 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
KR101160823B1 (ko) * 2004-08-24 2012-06-29 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
KR101117979B1 (ko) * 2004-12-24 2012-03-06 엘지디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법

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