CN104882415A - Ltps阵列基板及其制造方法 - Google Patents
Ltps阵列基板及其制造方法 Download PDFInfo
- Publication number
- CN104882415A CN104882415A CN201510310588.5A CN201510310588A CN104882415A CN 104882415 A CN104882415 A CN 104882415A CN 201510310588 A CN201510310588 A CN 201510310588A CN 104882415 A CN104882415 A CN 104882415A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 title abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 49
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims description 68
- 239000011248 coating agent Substances 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 36
- 229920005591 polysilicon Polymers 0.000 claims description 32
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 235000008429 bread Nutrition 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- -1 titanium oxide Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510310588.5A CN104882415B (zh) | 2015-06-08 | 2015-06-08 | Ltps阵列基板及其制造方法 |
US14/760,750 US9893096B2 (en) | 2015-06-08 | 2015-06-17 | LTPS array substrate and method for producing the same |
PCT/CN2015/081634 WO2016197399A1 (zh) | 2015-06-08 | 2015-06-17 | Ltps阵列基板及其制造方法 |
US15/863,993 US10529750B2 (en) | 2015-06-08 | 2018-01-08 | LTPS array substrate and method for producing the same |
US15/863,991 US10170506B2 (en) | 2015-06-08 | 2018-01-08 | LTPS array substrate and method for producing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510310588.5A CN104882415B (zh) | 2015-06-08 | 2015-06-08 | Ltps阵列基板及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104882415A true CN104882415A (zh) | 2015-09-02 |
CN104882415B CN104882415B (zh) | 2019-01-04 |
Family
ID=53949855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510310588.5A Active CN104882415B (zh) | 2015-06-08 | 2015-06-08 | Ltps阵列基板及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US9893096B2 (zh) |
CN (1) | CN104882415B (zh) |
WO (1) | WO2016197399A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105185743A (zh) * | 2015-10-09 | 2015-12-23 | 武汉华星光电技术有限公司 | 薄膜晶体管阵列基板的制备方法 |
WO2017054258A1 (zh) * | 2015-09-30 | 2017-04-06 | 深圳市华星光电技术有限公司 | Tft阵列基板的制备方法、tft阵列基板及显示装置 |
WO2017173727A1 (zh) * | 2016-04-05 | 2017-10-12 | 武汉华星光电技术有限公司 | 一种ltps阵列基板的制造方法 |
CN110085600A (zh) * | 2018-01-25 | 2019-08-02 | 鸿富锦精密工业(深圳)有限公司 | 电连接结构及其制作方法、tft阵列基板及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1885527A (zh) * | 2005-06-23 | 2006-12-27 | 三星Sdi株式会社 | 薄膜晶体管及有机发光显示装置的制造方法 |
US20110175088A1 (en) * | 2010-01-18 | 2011-07-21 | Jong In Kim | Thin-Film Transistor Substrate and Method of Fabricating the Same |
US20120161144A1 (en) * | 2010-12-23 | 2012-06-28 | Seung Ki Joo | Polysilicon thin film transistor having trench type copper bottom gate structure and method of making the same |
CN102709284A (zh) * | 2011-05-27 | 2012-10-03 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管阵列基板及其制作方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60103677A (ja) * | 1983-11-11 | 1985-06-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタの製造方法 |
JP2001119029A (ja) * | 1999-10-18 | 2001-04-27 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法及びそれを備えた液晶表示装置 |
JP2004356287A (ja) * | 2003-05-28 | 2004-12-16 | Shimada Phys & Chem Ind Co Ltd | 基板処理装置 |
JP2007333808A (ja) * | 2006-06-12 | 2007-12-27 | Mitsubishi Electric Corp | アクティブマトリクス表示装置 |
KR101484297B1 (ko) * | 2007-08-31 | 2015-01-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 표시장치의 제작방법 |
KR20120044042A (ko) * | 2010-10-27 | 2012-05-07 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101283009B1 (ko) * | 2011-05-26 | 2013-07-05 | 주승기 | 전기 도금장치 및 전기 도금방법 |
US8883572B2 (en) | 2011-05-27 | 2014-11-11 | Boe Technology Group Co., Ltd. | Manufacturing method of low temperature poly-silicon TFT array substrate |
US9395418B2 (en) * | 2011-06-13 | 2016-07-19 | Methode Electronics, Inc. | System and method for determining the state of health of electrochemical battery cells |
KR20130078666A (ko) * | 2011-12-30 | 2013-07-10 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
WO2014092116A1 (ja) * | 2012-12-12 | 2014-06-19 | シャープ株式会社 | 液晶表示パネル、液晶表示装置、液晶表示パネルの製造方法 |
JP5557304B1 (ja) * | 2013-09-26 | 2014-07-23 | 国立大学法人東北大学 | 有機半導体素子及びそれを備えたcmis半導体装置 |
CN103489876B (zh) * | 2013-09-27 | 2016-07-06 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
US9608008B2 (en) * | 2014-02-21 | 2017-03-28 | Sharp Kabushiki Kaisha | Active matrix substrate and method for producing same |
CN104882485A (zh) * | 2015-03-30 | 2015-09-02 | 深超光电(深圳)有限公司 | 薄膜晶体管及其制造方法 |
-
2015
- 2015-06-08 CN CN201510310588.5A patent/CN104882415B/zh active Active
- 2015-06-17 WO PCT/CN2015/081634 patent/WO2016197399A1/zh active Application Filing
- 2015-06-17 US US14/760,750 patent/US9893096B2/en active Active
-
2018
- 2018-01-08 US US15/863,993 patent/US10529750B2/en not_active Expired - Fee Related
- 2018-01-08 US US15/863,991 patent/US10170506B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1885527A (zh) * | 2005-06-23 | 2006-12-27 | 三星Sdi株式会社 | 薄膜晶体管及有机发光显示装置的制造方法 |
US20110175088A1 (en) * | 2010-01-18 | 2011-07-21 | Jong In Kim | Thin-Film Transistor Substrate and Method of Fabricating the Same |
US20120161144A1 (en) * | 2010-12-23 | 2012-06-28 | Seung Ki Joo | Polysilicon thin film transistor having trench type copper bottom gate structure and method of making the same |
CN102709284A (zh) * | 2011-05-27 | 2012-10-03 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管阵列基板及其制作方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017054258A1 (zh) * | 2015-09-30 | 2017-04-06 | 深圳市华星光电技术有限公司 | Tft阵列基板的制备方法、tft阵列基板及显示装置 |
CN105185743A (zh) * | 2015-10-09 | 2015-12-23 | 武汉华星光电技术有限公司 | 薄膜晶体管阵列基板的制备方法 |
CN105185743B (zh) * | 2015-10-09 | 2018-05-08 | 武汉华星光电技术有限公司 | 薄膜晶体管阵列基板的制备方法 |
WO2017173727A1 (zh) * | 2016-04-05 | 2017-10-12 | 武汉华星光电技术有限公司 | 一种ltps阵列基板的制造方法 |
CN110085600A (zh) * | 2018-01-25 | 2019-08-02 | 鸿富锦精密工业(深圳)有限公司 | 电连接结构及其制作方法、tft阵列基板及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US20170141138A1 (en) | 2017-05-18 |
US10529750B2 (en) | 2020-01-07 |
WO2016197399A1 (zh) | 2016-12-15 |
US9893096B2 (en) | 2018-02-13 |
US20180130832A1 (en) | 2018-05-10 |
US10170506B2 (en) | 2019-01-01 |
CN104882415B (zh) | 2019-01-04 |
US20180130831A1 (en) | 2018-05-10 |
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