CN108711548B - 金属氧化物薄膜晶体管及其制作方法、显示器 - Google Patents
金属氧化物薄膜晶体管及其制作方法、显示器 Download PDFInfo
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Abstract
本发明公开了一种金属氧化物薄膜晶体管的制作方法。所述制作方法包括以下步骤:在基板上形成层叠的遮光层、金属氧化物半导体层、栅极以及第一光阻图案层;在所述金属氧化物半导体层和所述第一光阻图案层上形成第二光阻层;对所述第二光阻层和所述第一光阻图案层进行灰化处理,并将灰化后的所述第二光阻层和所述第一光阻图案层剥离;在所述金属氧化物半导体层和所述栅极上形成第一绝缘层;在所述第一绝缘层上形成穿过所述第一绝缘层以分别于所述金属氧化物半导体层接触的源极和漏极。本发明通过在半导体化处理后硬化的第一光阻图案层上再次沉积第二光阻层,使得第二光阻层和第一光阻图案层构成流平的光阻层,二者在灰化处理后能够易于被剥离。
Description
技术领域
本发明属于薄膜晶体管制作技术领域,具体地讲,涉及一种金属氧化物薄膜晶体管及其制作方法、显示器。
背景技术
目前,在现有的显示器(诸如液晶显示器或者OLED显示器)中,通常利用薄膜晶体管(TFT)来作为控制开关,其中,薄膜晶体管通常都采用非晶硅(a-Si)薄膜晶体管。
然而,非晶硅(a-Si)薄膜晶体管的电子迁移率较低。与非晶硅薄膜晶体管相比,金属氧化物薄膜晶体管的迁移率较高,且可应用于透明显示技术,故具有较高的研究开发价值。在顶栅型的金属氧化物薄膜晶体管进行金属氧化物导体化过程中,会将上面的光阻硬化,从而导致后续制程中的光阻剥离出现困难。
发明内容
为了解决上述现有技术的问题,本发明的目的在于提供一种易于剥离光阻的金属氧化物半导体薄膜晶体管及其制作方法、显示器。
根据本发明的一方面,提供了一种金属氧化物薄膜晶体管的制作方法,所述制作方法包括以下步骤:在基板上形成层叠的遮光层、金属氧化物半导体层、栅极以及第一光阻图案层;在所述金属氧化物半导体层和所述第一光阻图案层上形成第二光阻层;对所述第二光阻层和所述第一光阻图案层进行灰化处理,并将灰化后的所述第二光阻层和所述第一光阻图案层剥离;在所述金属氧化物半导体层和所述栅极上形成第一绝缘层;在所述第一绝缘层上形成穿过所述第一绝缘层以分别于所述金属氧化物半导体层接触的源极和漏极。
进一步地,所述在基板上形成层叠的遮光层、金属氧化物半导体层、栅极以及第一光阻层的方法包括以下步骤:在所述基板上形成遮光层;在所述基板和所述遮光层上形成第二绝缘层;在所述第二绝缘层上形成层叠的金属氧化物半导体层、栅极绝缘层、栅极和第一光阻图案层。
进一步地,所述在所述第二绝缘层上形成层叠的金属氧化物半导体层、栅极绝缘层、栅极和第一光阻图案层的方法包括以下步骤:在所述第二绝缘层上形成金属氧化物层;在所述第二绝缘层和所述金属氧化物层上形成第三绝缘层;在所述第三绝缘层上形成层叠的第一金属层和第一光阻层;对所述第一光阻层、第一金属层和所述第三绝缘层进行图案化处理,以形成栅极绝缘层、栅极和第一光阻图案层;对所述金属氧化物层进行导体化,以形成所述金属氧化物半导体层。
进一步地,所述栅极绝缘层包括:分别位于所述金属氧化物层两侧的第一绝缘部和第二绝缘部,以及位于所述金属氧化物层上的第三绝缘部;所述栅极位于所述第三绝缘部上;所述第一光阻图案层包括位于所述第一绝缘部上的第一光阻部、位于所述第二绝缘部上的第二光阻部以及位于所述栅极上的第三光阻部。
进一步地,所述第三绝缘部、所述栅极和所述第三光阻部分别在所述金属氧化物层上的投影均位于所述金属氧化物层以内。
进一步地,所述在所述基板上形成遮光层的方法包括以下步骤:在所述基板上形成第二金属层;对所述第二金属层进行图案化处理,以形成所述遮光层。
进一步地,所述第二光阻层位于所述第一光阻部、所述第二光阻部、所述第三光阻部、所述金属氧化物半导体层和所述第二绝缘层上。
进一步地,所述在所述第一绝缘层上形成穿过所述第一绝缘层以分别于所述金属氧化物半导体层接触的源极和漏极的方法包括以下步骤:在所述第一绝缘层分别形成暴露所述金属氧化物半导体层的第一过孔和第二过孔;在所述第一绝缘层上形成填充所述第一过孔和所述第二过孔且与所述金属氧化物半导体层接触的第三金属层;对所述第三金属层进行图案化处理,以形成彼此独立的所述源极和所述漏极。
根据本发明的另一方面,还提供了一种由上述的制作方法制作形成的金属氧化物薄膜晶体管。
根据本发明的又一方面,又提供了一种包括上述的金属氧化物薄膜晶体管的显示器。
进一步地,该显示器是液晶显示器或者OLED显示器。
本发明的有益效果:本发明通过在半导体化处理后硬化的第一光阻图案层上再次沉积第二光阻层,使得第二光阻层和第一光阻图案层构成流平的光阻层,二者在灰化处理后能够易于被剥离。
附图说明
通过结合附图进行的以下描述,本发明的实施例的上述和其它方面、特点和优点将变得更加清楚,附图中:
图1是根据本发明的实施例的金属氧化物薄膜晶体管的制作方法的流程图;
图2A至图2N是根据本发明的实施例的金属氧化物薄膜晶体管的制程图。
具体实施方式
以下,将参照附图来详细描述本发明的实施例。然而,可以以许多不同的形式来实施本发明,并且本发明不应该被解释为限制于这里阐述的具体实施例。相反,提供这些实施例是为了解释本发明的原理及其实际应用,从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中,为了清楚起见,夸大了层和区域的厚度。相同的标号在整个说明书和附图中表示相同的元器件。
将理解的是,当诸如层、膜、区域或基板的元件被称作“在”另一元件“上”时,该元件可以直接在所述另一元件上,或者也可以存在中间元件。可选择地,当元件被称作“直接在”另一元件“上”时,不存在中间元件。
图1是根据本发明的实施例的金属氧化物薄膜晶体管的制作方法的流程图。图2A至图2N是根据本发明的实施例的金属氧化物薄膜晶体管的具体制程图。
步骤一:参照图2A,在基板100上形成第二金属层M2。
这里,基板100可例如为一绝缘且透明的玻璃基板或树脂基板。第二金属层M2可例如是叠层的钼铝钼(MoAlMo)结构或叠层的钛铝钛(TiAlTi)结构,也可以是单层的钼结构或者单层的铝结构。
步骤二:参照图2B,对第二金属层M2进行图案化处理,以形成遮光层200。
如此,步骤一和步骤二完成了在基板100上制作遮光层200的过程。
接着,步骤三:参照图2C,在基板100和遮光层200上形成第二绝缘层300。
这里,第二绝缘层300可例如是叠层的SiNx/SiOx结构,也可以是单层的SiNx结构或SiOx结构。
步骤四:参照图2D,在第二绝缘层300上形成图案化的金属氧化物层400A。
这里,金属氧化物层400A的制作材料可以是铟镓锌氧化物(IGZO)、氧化铟锌(IZO)、IGZTO。
步骤五:参照图2E,在第二绝缘层300和金属氧化物层400A上形成第三绝缘层IL3。
这里,第三绝缘层IL3可例如是叠层的SiNx/SiOx结构,也可以是单层的SiNx结构或SiOx结构。
步骤六:参照图2F,在第三绝缘层IL3上形成叠层的第一金属层M1和第一光阻层PR1。
这里,第一金属层M1可例如是叠层的钼铝钼(MoAlMo)结构或叠层的钛铝钛(TiAlTi)结构,也可以是单层的钼结构或者单层的铝结构。
步骤七:参照图2G,对第一光阻层PR1、第一金属层M1和第三绝缘层IL3进行图案化处理,以形成栅极绝缘层、栅极600和第一光阻图案层。
这里,所述栅极绝缘层包括:位于金属氧化物层400A两侧的第一绝缘部510和第二绝缘部520,以及位于金属氧化物层400A上的第三绝缘部530。栅极600位于第三绝缘部530上。所述第一光阻图案层包括:位于第一绝缘部510的第一光阻部PR11、位于第二绝缘部520上的第二光阻部PR12以及位于栅极600上的第三光阻部PR13。
步骤八:参照图2H,对金属氧化物层400A进行导体化处理,以形成金属氧化物半导体层400。这里,如背景金属中所述,当对金属氧化物层400A进行导体化处理时会将所述第一光阻图案层硬化,从而导致所述第一光阻图案层难以剥离。
如此,步骤四到步骤八完成了在第二绝缘层300上形成叠层的金属氧化物半导体层400、栅极绝缘层、栅极600和第一光阻图案层的过程。此外,步骤一到步骤八完成了图1所示的步骤S110。
进一步地,第三绝缘部530、栅极600和第三光阻部PR13在金属氧化物半导体层400上的投影完全位于金属氧化物半导体层400以内,这样可以将金属氧化物半导体层400的部分暴露。更进一步地,第三绝缘部530、栅极600和第三光阻部PR13在金属氧化物半导体层400上的投影位于金属氧化物半导体层400的中间部分。
步骤九:参照图2I,在金属氧化物半导体层400和所述第一光阻图案层上形成第二光阻层PR2。
进一步地,这里,第二光阻层PR2还设置于第二绝缘层300上。更进一步地,步骤九完成了图1所示的步骤S120。
步骤十:参照图2J,对第二光阻层PR2和所述第一光阻图案层进行灰化处理,并将灰化后的第二光阻层PR2和所述第一光阻图案层剥离。
这样,通过在步骤十中再次沉积第二光阻层PR2,使得第二光阻层PR2和所述第一光阻图案层构成流平的光阻层,灰化处理后能够易于被剥离。如此,步骤十完成了图1所示的步骤S130。
步骤十一:参照图2K,在金属氧化物半导体层400、栅极600和第二绝缘层300上形成第一绝缘层700。
这里,第一绝缘层700可例如是叠层的SiNx/SiOx结构,也可以是单层的SiNx结构或SiOx结构。如此,步骤十一完成了图1所示的步骤S140。
步骤十二:参照图2L,在第一绝缘层700中分别形成暴露金属氧化物半导体层400的第一过孔710和第二过孔720。
步骤十三:参照图2M,在第一绝缘层700上形成填充第一过孔710和第二过孔720且与金属氧化物半导体层400接触的第三金属层M3。
步骤十四:参照图2N,对第三金属层M3进行图案化处理,以形成彼此独立的源极800和漏极900。
这里,步骤十二至步骤十四完成了图1所示的步骤S150。
作为本发明的另一实施例,还提供了一种由上述的制作方法制作形成的金属氧化物薄膜晶体管。
作为本发明的又一实施例,又提供了一种包括该金属氧化物薄膜晶体管的显示器。该显示器可例如是液晶显示器或者OLED显示器。
综上所述,本发明通过在半导体化处理后硬化的第一光阻图案层上再次沉积第二光阻层,使得第二光阻层和第一光阻图案层构成流平的光阻层,二者在灰化处理后能够易于被剥离。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。
Claims (10)
1.一种金属氧化物薄膜晶体管的制作方法,其特征在于,所述制作方法包括以下步骤:
在基板上形成层叠的遮光层、金属氧化物半导体层、栅极以及第一光阻图案层;
在所述金属氧化物半导体层和所述第一光阻图案层上形成第二光阻层,使得所述第二光阻层和所述第一光阻图案层构成流平的光阻层;
对构成流平的光阻层的所述第二光阻层和所述第一光阻图案层进行灰化处理,并将灰化后的所述第二光阻层和所述第一光阻图案层剥离;
在所述金属氧化物半导体层和所述栅极上形成第一绝缘层;
在所述第一绝缘层上形成穿过所述第一绝缘层以分别与 所述金属氧化物半导体层接触的源极和漏极。
2.根据权利要求1所述的制作方法,其特征在于,所述在基板上形成层叠的遮光层、金属氧化物半导体层、栅极以及第一光阻层的方法包括以下步骤:
在所述基板上形成遮光层;
在所述基板和所述遮光层上形成第二绝缘层;
在所述第二绝缘层上形成层叠的金属氧化物半导体层、栅极绝缘层、栅极和第一光阻图案层。
3.根据权利要求2所述的制作方法,其特征在于,所述在所述第二绝缘层上形成层叠的金属氧化物半导体层、栅极绝缘层、栅极和第一光阻图案层的方法包括以下步骤:
在所述第二绝缘层上形成金属氧化物层;
在所述第二绝缘层和所述金属氧化物层上形成第三绝缘层;
在所述第三绝缘层上形成层叠的第一金属层和第一光阻层;
对所述第一光阻层、第一金属层和所述第三绝缘层进行图案化处理,以形成栅极绝缘层、栅极和第一光阻图案层;
对所述金属氧化物层进行导体化,以形成所述金属氧化物半导体层。
4.根据权利要求3所述的制作方法,其特征在于,所述栅极绝缘层包括:分别位于所述金属氧化物层两侧的第一绝缘部和第二绝缘部,以及位于所述金属氧化物层上的第三绝缘部;所述栅极位于所述第三绝缘部上;所述第一光阻图案层包括位于所述第一绝缘部上的第一光阻部、位于所述第二绝缘部上的第二光阻部以及位于所述栅极上的第三光阻部。
5.根据权利要求4所述的制作方法,其特征在于,所述第三绝缘部、所述栅极和所述第三光阻部分别在所述金属氧化物层上的投影均位于所述金属氧化物层以内。
6.根据权利要求3至5任一项所述的制作方法,其特征在于,所述在所述基板上形成遮光层的方法包括以下步骤:
在所述基板上形成第二金属层;
对所述第二金属层进行图案化处理,以形成所述遮光层。
7.根据权利要求4或5所述的制作方法,其特征在于,所述第二光阻层位于所述第一光阻部、所述第二光阻部、所述第三光阻部、所述金属氧化物半导体层和所述第二绝缘层上。
8.根据权利要求1所述的制作方法,其特征在于,所述在所述第一绝缘层上形成穿过所述第一绝缘层以分别与 所述金属氧化物半导体层接触的源极和漏极的方法包括以下步骤:
在所述第一绝缘层分别形成暴露所述金属氧化物半导体层的第一过孔和第二过孔;
在所述第一绝缘层上形成填充所述第一过孔和所述第二过孔且与所述金属氧化物半导体层接触的第三金属层;
对所述第三金属层进行图案化处理,以形成彼此独立的所述源极和所述漏极。
9.一种由权利要求1至8任一项所述的制作方法制作形成的金属氧化物薄膜晶体管。
10.一种包括权利要求9所述的金属氧化物薄膜晶体管的显示器。
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