CN106935660B - 薄膜晶体管及其制作方法、阵列基板和显示装置 - Google Patents
薄膜晶体管及其制作方法、阵列基板和显示装置 Download PDFInfo
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Abstract
本发明提出了薄膜晶体管及其制作方法、阵列基板和显示装置。该方法包括:在基板的一侧依次形成缓冲层和图形化后的源漏电极;在缓冲层和源漏电极的远离基板的一侧,形成光刻胶层;从基板远离光刻胶层的一侧,对光刻胶层进行曝光和显影处理,以得到光刻胶图案;在缓冲层和光刻胶图案的远离基板的一侧,依次形成半导体层、第一绝缘层和导电层;去除光刻胶层,以获得有源层、栅极绝缘层和栅极;其中,基板和缓冲层由透光材料形成。本发明所提出的制作方法,通过背面曝光光刻胶层的方式,可省去一次光掩模,简化工序、降低制作成本,且制备的薄膜晶体管直接利用金属作为源漏导电区域,无需额外的导电化技术,解决了源漏电极导电化效果稳定性差的问题。
Description
技术领域
本发明涉及显示技术领域,具体的,本发明涉及薄膜晶体管及其制作方法、阵列基板和显示装置。
背景技术
目前,大多数的氧化物薄膜晶体管采用底栅堆叠型的结构,主要有两种刻蚀阻挡(ESL)和背沟道刻蚀(BCE)两种,可以获得相对稳定的开关特性。但是,这两种方法都存在寄生电容较大,容易产生信号延迟而会降低显示器的画面的显示质量,不利于大尺寸高分辨率的显示。而顶栅自对准型晶体管结构由于栅极和源漏电极不存在交叠区域,所以寄生电容非常小,可以有效地减少信号延迟,从而提高画面质量。目前典型的顶栅自对准结构的晶体管的源漏电极区域是通过对氧化物半导体的导体化处理来达到导电的效果,其导电电阻仍然很大,导电效果并不十分理想,并且导体化稳定性较差,在后期的沉积和温度工艺中很难稳定的维持在一定水平。
所以,现阶段的制造顶栅自对准型薄膜晶体管的方法仍有待改进。
发明内容
本发明旨在至少在一定程度上解决相关技术中的技术问题之一。
本发明是基于发明人的下列发现而完成的:
针对上述技术问题,本发明的申请人致力于研究一种寄生电容较小、源漏电极半导体性能稳定性高的制造薄膜晶体管的方法。经过长期研究发明人发现,在具有缓冲层的基板上形成源漏电极图形,并涂布正性光刻胶,再利用源漏电极图形作为掩模版,可以通过背面曝光的方式对光刻胶进行曝光、显影。随后沉积金属氧化物层、绝缘层和金属导电层,利用去除光刻胶及其上的各层,形成位于源漏电极中间的有源层、栅极绝缘层和栅极图形。通过该方法不但可以简化工艺,减少光掩膜的数量和曝光的次数,而且还可以形成导电性能优良的源漏区域,利于获得性能优良的顶栅结构薄膜晶体管,同时极大的减小寄生电容。
有鉴于此,本发明的一个目的在于提出一种工序少、成本低、无需导电化技术或者寄生电容小的制造薄膜晶体管方法。
在本发明的第一方面,本发明提出了一种制作薄膜晶体管的方法。
根据本发明的实施例,所述方法包括:在基板的一侧依次形成缓冲层和图形化的源漏电极;在所述缓冲层和源漏电极的远离所述基板的一侧,形成光刻胶层;从所述基板远离所述光刻胶层的一侧,对所述光刻胶层进行曝光和显影处理,以得到光刻胶图案;在所述缓冲层和所述光刻胶图案的远离所述基板的一侧,依次形成半导体层、第一绝缘层和导电层;去除所述光刻胶层,以获得有源层、栅极绝缘层和栅极;其中,所述基板和缓冲层由透光材料形成。
发明人意外地发现,采用本发明实施例的制作方法,通过背面曝光光刻胶层的方式,可省去一次光掩模,简化工序、降低制作成本,并且制备的薄膜晶体管直接利用金属作为源漏导电区域,无需额外的导电化技术,也就解决了源漏电极导电化效果稳定性差的问题,而且其栅极和源极漏极不交叠设置,因此不存在寄生电容所带来的显示画质问题。
另外,根据本发明上述实施例的制作方法,还可以具有如下附加的技术特征:
根据本发明的实施例,形成所述基板的材料包括玻璃、石英和柔性材料的至少一种。
根据本发明的实施例,形成所述缓冲层的材料包括SiO2、SiNx和SiONx的至少一种。
根据本发明的实施例,形成所述光刻胶层的材料为正性光刻胶。
根据本发明的实施例,所述制作方法在去除所述光刻胶层之后进一步包括:在所述源漏电极和所述栅极的远离所述基板的一侧,沉积第二绝缘层。
根据本发明的实施例,所述源漏电极、所述半导体层、所述第一绝缘层和所述导电层是各自独立地通过沉积的方法形成的。
根据本发明的实施例,去除所述光刻胶层的方法为剥离法。
在本发明的第二方面,本发明提出了一种薄膜晶体管。
根据本发明的实施例,所述薄膜晶体管通过上述的方法制作的。
发明人意外地发现,本发明实施例的薄膜晶体管,其栅极和源极漏极不交叠设置,因此不存在寄生电容所带来的显示画质问题,而且直接利用金属作为源漏导电区域,无需额外的导体化技术,也就不会出现导电化效果稳定性差的问题。本领域技术人员能够理解的是,前面针对制造薄膜晶体管的方法所描述的特征和优点,仍适用于该薄膜晶体管,在此不再赘述。
在本发明的第三方面,本发明提出了一种阵列基板。
根据本发明的实施例,所述阵列基板包括上述的薄膜晶体管。
发明人意外地发现,本发明实施例的阵列基板良品率更高,并且制作成本更低。本领域技术人员能够理解的是,前面针对制造薄膜晶体管的方法、薄膜晶体管所描述的特征和优点,仍适用于该阵列基板,在此不再赘述。
在本发明的第四方面,本发明提出了一种显示装置。
根据本发明的实施例,所述显示装置包括上述的阵列基板。
发明人意外地发现,本发明实施例的显示装置的显示画质更稳定,并且制造成本降低,从而可提高其产品竞争力。本领域技术人员能够理解的是,前面针对制造薄膜晶体管的方法、薄膜晶体管、阵列基板所描述的特征和优点,仍适用于该显示装置,在此不再赘述。
本发明的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解,其中:
图1是本发明一个实施例的制作薄膜晶体管的方法的流程示意图;
图2是本发明一个实施例的制作方法的步骤S100获得的产品的结构示意图;
图3是本发明一个实施例的制作方法的步骤S200获得的产品的结构示意图;
图4是本发明一个实施例的制作方法的背面曝光方式的示意图;
图5是本发明一个实施例的制作方法的步骤S300获得的产品的结构示意图;
图6是本发明一个实施例的制作方法的步骤S400获得的产品的结构示意图;
图7是本发明一个实施例的制作方法的步骤S500获得的产品的结构示意图;
图8是本发明一个实施例的制作方法的步骤S600获得的产品的结构示意图。
附图标记
100 基板
200 缓冲层
300 源漏电极
400 光刻胶层
410 光刻胶图案
500 半导体层
510 有源层
600 第一绝缘层
610 栅极绝缘层
700 导电层
710 栅极
800 第二绝缘层
具体实施方式
下面详细描述本发明的实施例,本技术领域人员会理解,下面实施例旨在用于解释本发明,而不应视为对本发明的限制。除非特别说明,在下面实施例中没有明确描述具体技术或条件的,本领域技术人员可以按照本领域内的常用的技术或条件或按照产品说明书进行。所用试剂或仪器未注明生产厂商者,均为可通过市购到的常规产品。
在本发明的一个方面,本发明提出了一种制作薄膜晶体管的方法。参照图1~8,对本发明的制作方法进行详细的描述。根据本发明的实施例,参考图1,该制作方法包括:
S100:在基板的一侧依次形成缓冲层和图形化后的源漏电极。
在该步骤中,参考图2,可在基板100的一侧从下至上依次形成缓冲层200和图形化处理后的源漏电极300。
根据本发明的实施例,基板100是由透光材料形成的。如此,后续采用从背面对光刻胶层进行曝光时,紫外线(UV)可穿过该基板100从而有效地对光刻胶层进行光刻蚀处理。在本发明的一些实施例中,形成基板100的材料可以包括玻璃、石英和柔性材料的至少一种。如此,后续的光刻胶层背面曝光步骤中,紫外线(UV)可更有效地穿过该基板100。
根据本发明的实施例,缓冲层200是由透光材料形成的。如此,后续采用从背面对光刻胶层进行曝光时,紫外线(UV)可穿过该缓冲层200从而有效地对光刻胶层进行光刻蚀处理。在本发明的一些实施例中,形成所述缓冲层的材料可以包括SiO2、SiNx和SiONx的至少一种。如此,后续的光刻胶层背面曝光步骤中,紫外线(UV)可更有效地穿过该缓冲层200。
根据本发明的实施例,在基板100的一侧形成缓冲层200的具体方法,不受特别的限制,本领域内常用的形成缓冲层的方法均可,具体例如沉积法,等等,只要该方法能使透光的基板100的一侧形成透光的缓冲层200即可,本领域技术人员可根据实际的制造工艺需要进行选择,在此不再赘述。
根据本发明的实施例,源漏电极300的具体材料不受特别的限制,只要该材料组成的源漏电极300具有导电功能且使紫外线无法穿过即可,本领域技术人员可根据实际的制造工艺需要进行选择,例如包括但不限于金属、有色合金等,如此,采用上述材料的源漏电极300,其导电性能好且紫外线更无法穿透。
根据本发明的实施例,在缓冲层200远离基板100的一侧形成源漏电极300的具体方法不受特别的限制,本领域内常用的形成源漏电极的方法均可,只要该方法能使透光的缓冲层200的一侧形成不透光的源漏电极300即可,本领域技术人员可根据实际的制造工艺需要进行选择。在本发明的一些实施例中,源漏电极300可以是通过沉积的方法形成的。如此,采用上述方法形成的源漏电极300,不仅具有导电功能,且能使紫外线无法穿过,并且该方法操作简单、制造成本低。
S200:在缓冲层和源漏电极的远离基板的一侧,形成光刻胶层。
在该步骤中,参考图3,可在缓冲层200和源漏电极300的远离基板100的一侧,进一步覆盖光刻胶层400。
根据本发明的实施例,光刻胶层400可以是由正性光刻胶材料形成的。如此,后续以源漏电极300为光掩膜对该光刻胶层400进行背面曝光和显影的处理后,源漏电极300远离基板100的一侧能获得具有相同图案化的光刻胶,从而利于没有光刻胶保护的区域进一步形成其他结构。
根据本发明的实施例,形成该光刻胶层400的具体方法不受特别的限制,本领域内常用的形成光刻胶层的方法均可,只要该方法能使光刻胶层400形成在缓冲层200和源漏电极300的远离基板100的一侧即可,本领域技术人员可根据实际的制造工艺需要进行选择和调整,在此不再赘述。
S300:从基板远离光刻胶层的一侧,对光刻胶层进行曝光和显影处理,以得到光刻胶图案。
在该步骤中,参考图4,可采用背面曝光的方式,从基板100远离光刻胶层400的一侧,从下至上地对光刻胶层400进行UV光曝光,再经过显影处理,可获得和源漏电极300具有相同图案化的光刻胶图案410,具体获得的结构参考图5。如此,以源漏电极300为光掩膜,可省去一次光掩模,简化工序、降低制作成本。
根据本发明的实施例,曝光和显影处理的具体方法和工艺参数,不受特别的限制,只要该处理能使源漏电极300的上表面形成具有相同图案化的光刻胶即可,本领域技术人员可根据实际制备过程中对其进行选择和调整,在此不再赘述。
S400:在缓冲层和光刻胶图案的远离基板的一侧,依次形成导体层、第一绝缘层和导电层。
在该步骤中,参考图6,在光刻胶图案410和缓冲层200的上表面,从下至上依次覆盖半导体层500、第一绝缘层600和导电层700。
根据本发明的实施例,形成该半导体层500、第一绝缘层600和导电层700的具体方法,不受特别的限制,本领域内常用地形成半导体层、第一绝缘层以及导电层的方法均可,只要这些方法能在光刻胶和缓冲层的上表面依次形成上述三层结构即可,本领域技术人员可根据实际的制造过程进行选择。在本发明的一些实施例中,有源层、栅极绝缘层和栅极可以是通过沉积的方法形成的。如此,上述沉积法的操作简单、制造成本低。
S500:去除光刻胶层,以获得有源层、栅极绝缘层和栅极。
在该步骤中,将源漏电极层300上表面的光刻胶图案410及光刻胶图案410上表面的其他层状结构(包括部分的半导体层500、第一绝缘层600和导电层700)一并去除,去除后获得的具体结构参考图7。如此,可形成有源层510、栅极绝缘层610和栅极710,由此,无需设计图案的掩膜,且该方法操作简单、制造成本低。
根据本发明的实施例,该去除光刻胶的具体方法不受特别的限制,只要能使光刻胶图案410及其上表面的其他层状结构一并去除即可,本领域技术人员可根据光刻胶图案及其他层状结构的材料与性能进行选择。在本发明的一些实施例中,去除光刻胶图案410的方法可以为剥离法。如此,采用上述方法剥离光刻胶图案,可避免湿法刻蚀的刻蚀液会对阵列基板的性能产生影响,且剥离后源漏电极300的表面性能也更佳。
另外,根据本发明的实施例,该制作方法可进一步包括:
S600:在源漏电极和栅极的远离基板的一侧,沉积第二绝缘层。
在该步骤中,参考图8,可进一步在剥离后的源漏电极300和栅极710的上表面形成第二绝缘层800。如此,形成的第二绝缘层800可保护顶栅结构的源漏电极300和栅极710,防止其暴露在外而容易被损坏。
根据本发明的实施例,形成该第二绝缘层800的具体方法不受特别的限制,本领域内常用的形成绝缘层的方法均可,只要该方法形成的第二绝缘层800能有效地保护源漏电极300和栅极710且不会影响其性能即可,本领域技术人员可根据制造的实际情况进行选择。在本发明的一些实施例中,可在源漏电极300和栅极710的远离基板100的一侧沉积第二绝缘层。如此,采用上述沉积法形成的绝缘层800,与源漏电极300和栅极710上表面的贴附性能更好,且该第二绝缘层800的一体性更好,不仅能起到层间介质的作用,还可作为钝化层保护源漏电极300和栅极710。
综上所述,根据本发明的实施例,本发明提出了一种制作薄膜晶体管的方法,通过背面曝光光刻胶层的方式,可省去一次光掩模,简化工序、降低制作成本,且制备的薄膜晶体管直接利用金属作为源漏导电区域,无需额外的导电化技术,也就解决了源漏电极导电化效果稳定性差的问题,而且其栅极和源极漏极不交叠设置,因此不存在寄生电容所带来的显示画质问题。
在本发明的另一个方面,本发明提出了一种薄膜晶体管。
根据本发明的实施例,该薄膜晶体管通过上述的方法制作的。
综上所述,根据本发明的实施例,本发明提出了一种薄膜晶体管,其栅极和源极漏极不交叠设置,因此不存在寄生电容所带来的显示画质问题,而且直接利用金属作为源漏导电区域,无需额外的导体化技术,也就不会出现导电化效果稳定性差的问题。本领域技术人员能够理解的是,前面针对制造薄膜晶体管的方法所描述的特征和优点,仍适用于该薄膜晶体管,在此不再赘述。
在本发明的另一个方面,本发明提出了一种阵列基板。
根据本发明的实施例,该阵列基板包括上述的薄膜晶体管。需要说明的是,该阵列基板除了薄膜晶体管以外,还可以包括其他必要的组成和结构,具体例如像素电极、数据线或者外围电路区,等等,本领域技术人员可根据该阵列基板的具体使用要求进行设计和补充,在此不再过多地进行赘述。
综上所述,根据本发明的实施例,本发明提出了一种阵列基板的良品率更高,并且制作成本更低。本领域技术人员能够理解的是,前面针对制造薄膜晶体管的方法、薄膜晶体管所描述的特征和优点,仍适用于该阵列基板,在此不再赘述。
在本发明的另一个方面,本发明提出了一种显示装置。根据本发明的实施例,该显示装置包括上述的阵列基板。
根据本发明的实施例,该显示装置的具体种类,不受特别的限制,本领域内任何已知的显示装置类型均可,具体例如电视、手机、电脑显示屏、平板显示器、游戏机、可穿戴设备及具有显示面板的生活、家用电器等等,本领域技术人员可根据显示装置的实际使用条件进行选择,在此不再赘述。
需要说明的是,该显示装置除了阵列基板以外,还可以包括其他必要的组成和结构,以液晶显示器为例,具体例如彩膜基板、液晶显示层、光源组件、控制组件、电路和外壳,等等,本领域技术人员可根据该阵列基板的具体使用要求进行补充,在此不再过多赘述。
综上所述,根据本发明的实施例,本发明提出了一种显示装置的显示画质更稳定,并且制造成本降低,从而可提高其产品竞争力。本领域技术人员能够理解的是,前面针对制造薄膜晶体管的方法、薄膜晶体管、阵列基板所描述的特征和优点,仍适用于该显示装置,在此不再赘述。
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例,可以理解的是,上述实施例是示例性的,不能理解为对本发明的限制,本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。
Claims (9)
1.一种制作薄膜晶体管的方法,其特征在于,包括:
在基板的一侧依次形成缓冲层和图形化后的源漏电极,且所述源漏电极不被紫外线穿过;
在所述缓冲层和源漏电极的远离所述基板的一侧,形成光刻胶层,且所述光刻胶层由正性光刻胶形成;
从所述基板远离所述光刻胶层的一侧,对所述光刻胶层进行曝光和显影处理,以得到光刻胶图案;
在所述缓冲层和所述光刻胶图案的远离所述基板的一侧,依次形成半导体层、第一绝缘层和导电层;
去除所述光刻胶层,以获得有源层、栅极绝缘层和栅极;
其中,所述基板和缓冲层由透光材料形成。
2.根据权利要求1所述的方法,其特征在于,形成所述基板的材料包括玻璃、石英和柔性材料的至少一种。
3.根据权利要求1所述的方法,其特征在于,形成所述缓冲层的材料包括SiO2、SiNx和SiONx的至少一种。
4.根据权利要求1~3中任一项所述的方法,其特征在于,所述制作方法在去除所述光刻胶层之后进一步包括:
在所述源漏电极和所述栅极的远离所述基板的一侧,沉积第二绝缘层。
5.根据权利要求1所述的方法,其特征在于,所述源漏电极、所述半导体层、所述第一绝缘层和所述导电层是各自独立地通过沉积的方法形成的。
6.根据权利要求1~3或5中任一项所述的方法,其特征在于,去除所述光刻胶层的方法为剥离法。
7.一种薄膜晶体管,其特征在于,通过权利要求1~6任一项所述的方法制作的,且所述薄膜晶体管包括基板、缓冲层、源漏电极、有源层、栅极绝缘层和栅极;
所述缓冲层覆盖所述基板的一个表面,所述源漏电极设置在所述缓冲层远离所述基板的表面,且所述源漏电极不被紫外线穿过;
所述有源层设置在所述缓冲层远离所述基板的表面,且所述有源层和所述源漏电极在所述基板上的正投影无交叠;
所述栅极绝缘层和所述栅极层叠设置在所述有源层远离所述基板的表面,并且,所述栅极绝缘层在所述基板上的正投影、所述栅极在所述基板上的正投影都与所述有源层在所述基板上的正投影重合。
8.一种阵列基板,其特征在于,包括权利要求7所述的薄膜晶体管。
9.一种显示装置,其特征在于,包括权利要求8所述的阵列基板。
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US10833107B2 (en) | 2020-11-10 |
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