CN1897285B - 薄膜晶体管阵列面板及制造方法 - Google Patents

薄膜晶体管阵列面板及制造方法 Download PDF

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Publication number
CN1897285B
CN1897285B CN200610098474XA CN200610098474A CN1897285B CN 1897285 B CN1897285 B CN 1897285B CN 200610098474X A CN200610098474X A CN 200610098474XA CN 200610098474 A CN200610098474 A CN 200610098474A CN 1897285 B CN1897285 B CN 1897285B
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CN
China
Prior art keywords
conducting film
photoresist pattern
ohmic contact
gas
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200610098474XA
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English (en)
Chinese (zh)
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CN1897285A (zh
Inventor
金湘甲
李禹根
金时烈
周振豪
金彰洙
皇甫尙佑
吴旼锡
柳慧英
秦洪基
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1897285A publication Critical patent/CN1897285A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN200610098474XA 2005-07-12 2006-07-07 薄膜晶体管阵列面板及制造方法 Expired - Fee Related CN1897285B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020050062730 2005-07-12
KR1020050062730A KR101189271B1 (ko) 2005-07-12 2005-07-12 박막 트랜지스터 표시판 및 그 제조 방법
KR10-2005-0062730 2005-07-12

Publications (2)

Publication Number Publication Date
CN1897285A CN1897285A (zh) 2007-01-17
CN1897285B true CN1897285B (zh) 2010-05-12

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CN200610098474XA Expired - Fee Related CN1897285B (zh) 2005-07-12 2006-07-07 薄膜晶体管阵列面板及制造方法

Country Status (5)

Country Link
US (3) US7371621B2 (enExample)
JP (1) JP5156203B2 (enExample)
KR (1) KR101189271B1 (enExample)
CN (1) CN1897285B (enExample)
TW (1) TWI402988B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5247070B2 (ja) * 2007-06-12 2013-07-24 株式会社ジャパンディスプレイウェスト 液晶表示パネル及びその製造方法
CN101593756B (zh) * 2008-05-28 2011-05-18 群康科技(深圳)有限公司 薄膜晶体管基板、薄膜晶体管基板制造方法及显示装置
US8227278B2 (en) * 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101628254B1 (ko) * 2009-09-21 2016-06-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US8785241B2 (en) * 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2693420B1 (en) * 2011-03-30 2019-05-08 Sharp Kabushiki Kaisha Active matrix substrate, display device, and active matrix substrate manufacturing method
CN102184966B (zh) * 2011-04-15 2013-02-13 福州华映视讯有限公司 晶体管数组基板
CN102508385A (zh) * 2011-11-17 2012-06-20 华映视讯（吴江）有限公司 像素结构、阵列基板及其制作方法
WO2014054487A1 (ja) * 2012-10-02 2014-04-10 シャープ株式会社 液晶パネル、及び製造方法
US20140199833A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Methods for performing a via reveal etching process for forming through-silicon vias in a substrate
CN103811327A (zh) * 2014-02-14 2014-05-21 上海和辉光电有限公司 薄膜晶体管的制作方法
CN106653772B (zh) * 2016-12-30 2019-10-01 惠科股份有限公司 一种显示面板及制程
KR102748667B1 (ko) 2019-10-30 2025-01-02 삼성디스플레이 주식회사 표시 장치, 패턴 형성 방법 및 표시 장치의 제조 방법
KR20220065949A (ko) * 2020-11-13 2022-05-23 삼성디스플레이 주식회사 표시 장치

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* Cited by examiner, † Cited by third party
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US6287899B1 (en) * 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
CN1434428A (zh) * 2002-01-25 2003-08-06 三洋电机株式会社 显示器
CN1501153A (zh) * 2002-08-27 2004-06-02 ���ǵ�����ʽ���� 薄膜晶体管阵列面板及其制造方法

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US6849872B1 (en) * 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
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JPH06267983A (ja) * 1993-03-16 1994-09-22 Hitachi Ltd 薄膜トランジスタ及びその製法
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KR100552283B1 (ko) 1998-01-22 2006-06-23 삼성전자주식회사 몰리브덴및몰리브덴합금을이용한박막트랜지스터기판및그제조방법
JP2000056284A (ja) 1998-08-10 2000-02-25 Toshiba Corp 液晶表示装置の製造方法
US6380558B1 (en) * 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
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KR100904757B1 (ko) 2002-12-30 2009-06-29 엘지디스플레이 주식회사 액정표시장치 및 그의 제조방법
KR100640211B1 (ko) * 2003-04-03 2006-10-31 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
KR101160823B1 (ko) * 2004-08-24 2012-06-29 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
KR101117979B1 (ko) * 2004-12-24 2012-03-06 엘지디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287899B1 (en) * 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
CN1434428A (zh) * 2002-01-25 2003-08-06 三洋电机株式会社 显示器
CN1501153A (zh) * 2002-08-27 2004-06-02 ���ǵ�����ʽ���� 薄膜晶体管阵列面板及其制造方法

Also Published As

Publication number Publication date
KR20070008868A (ko) 2007-01-18
JP2007027735A (ja) 2007-02-01
US20080203393A1 (en) 2008-08-28
US20070012967A1 (en) 2007-01-18
US7888675B2 (en) 2011-02-15
US20100203715A1 (en) 2010-08-12
JP5156203B2 (ja) 2013-03-06
US8173493B2 (en) 2012-05-08
TW200715561A (en) 2007-04-16
CN1897285A (zh) 2007-01-17
TWI402988B (zh) 2013-07-21
KR101189271B1 (ko) 2012-10-09
US7371621B2 (en) 2008-05-13

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