TWI402988B - 薄膜電晶體陣列面板以及其製造方法 - Google Patents
薄膜電晶體陣列面板以及其製造方法 Download PDFInfo
- Publication number
- TWI402988B TWI402988B TW095124016A TW95124016A TWI402988B TW I402988 B TWI402988 B TW I402988B TW 095124016 A TW095124016 A TW 095124016A TW 95124016 A TW95124016 A TW 95124016A TW I402988 B TWI402988 B TW I402988B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive film
- electrode
- array panel
- transistor array
- containing gas
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000010408 film Substances 0.000 claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 47
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 13
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 4
- 229910016027 MoTi Inorganic materials 0.000 claims description 3
- 238000003860 storage Methods 0.000 description 45
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 21
- 239000000460 chlorine Substances 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 238000002161 passivation Methods 0.000 description 12
- 239000012212 insulator Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 241001536352 Fraxinus americana Species 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 241000565357 Fraxinus nigra Species 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050062730A KR101189271B1 (ko) | 2005-07-12 | 2005-07-12 | 박막 트랜지스터 표시판 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200715561A TW200715561A (en) | 2007-04-16 |
| TWI402988B true TWI402988B (zh) | 2013-07-21 |
Family
ID=37609731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095124016A TWI402988B (zh) | 2005-07-12 | 2006-06-30 | 薄膜電晶體陣列面板以及其製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7371621B2 (enExample) |
| JP (1) | JP5156203B2 (enExample) |
| KR (1) | KR101189271B1 (enExample) |
| CN (1) | CN1897285B (enExample) |
| TW (1) | TWI402988B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060097381A (ko) * | 2005-03-09 | 2006-09-14 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR101189271B1 (ko) * | 2005-07-12 | 2012-10-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP5247070B2 (ja) * | 2007-06-12 | 2013-07-24 | 株式会社ジャパンディスプレイウェスト | 液晶表示パネル及びその製造方法 |
| CN101593756B (zh) * | 2008-05-28 | 2011-05-18 | 群康科技(深圳)有限公司 | 薄膜晶体管基板、薄膜晶体管基板制造方法及显示装置 |
| US8227278B2 (en) * | 2008-09-05 | 2012-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Methods for manufacturing thin film transistor and display device |
| KR101545460B1 (ko) * | 2008-09-12 | 2015-08-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 생산 방법 |
| KR101628254B1 (ko) * | 2009-09-21 | 2016-06-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
| US8785241B2 (en) * | 2010-07-16 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2693420B1 (en) * | 2011-03-30 | 2019-05-08 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and active matrix substrate manufacturing method |
| CN102184966B (zh) * | 2011-04-15 | 2013-02-13 | 福州华映视讯有限公司 | 晶体管数组基板 |
| CN102508385A (zh) * | 2011-11-17 | 2012-06-20 | 华映视讯（吴江）有限公司 | 像素结构、阵列基板及其制作方法 |
| WO2014054487A1 (ja) * | 2012-10-02 | 2014-04-10 | シャープ株式会社 | 液晶パネル、及び製造方法 |
| US20140199833A1 (en) * | 2013-01-11 | 2014-07-17 | Applied Materials, Inc. | Methods for performing a via reveal etching process for forming through-silicon vias in a substrate |
| CN103811327A (zh) * | 2014-02-14 | 2014-05-21 | 上海和辉光电有限公司 | 薄膜晶体管的制作方法 |
| CN106653772B (zh) * | 2016-12-30 | 2019-10-01 | 惠科股份有限公司 | 一种显示面板及制程 |
| KR102748667B1 (ko) | 2019-10-30 | 2025-01-02 | 삼성디스플레이 주식회사 | 표시 장치, 패턴 형성 방법 및 표시 장치의 제조 방법 |
| KR20220065949A (ko) * | 2020-11-13 | 2022-05-23 | 삼성디스플레이 주식회사 | 표시 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0669236A (ja) * | 1992-07-14 | 1994-03-11 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
| JPH06267983A (ja) * | 1993-03-16 | 1994-09-22 | Hitachi Ltd | 薄膜トランジスタ及びその製法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849872B1 (en) * | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US5923050A (en) * | 1995-02-08 | 1999-07-13 | Samsung Electronics Co., Ltd. | Amorphous silicon TFT |
| JPH08264790A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 薄膜電解効果トランジスタ及び液晶表示装置 |
| KR100552283B1 (ko) | 1998-01-22 | 2006-06-23 | 삼성전자주식회사 | 몰리브덴및몰리브덴합금을이용한박막트랜지스터기판및그제조방법 |
| JP2000056284A (ja) | 1998-08-10 | 2000-02-25 | Toshiba Corp | 液晶表示装置の製造方法 |
| US6380558B1 (en) * | 1998-12-29 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| US6287899B1 (en) * | 1998-12-31 | 2001-09-11 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same |
| KR100321227B1 (ko) | 2000-03-18 | 2004-09-07 | 테크노세미켐 주식회사 | 액정표시장치의전극용식각액 |
| US7095460B2 (en) * | 2001-02-26 | 2006-08-22 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same |
| JP4920140B2 (ja) | 2001-05-18 | 2012-04-18 | ゲットナー・ファンデーション・エルエルシー | 液晶表示装置及びその製造方法 |
| JP3953330B2 (ja) * | 2002-01-25 | 2007-08-08 | 三洋電機株式会社 | 表示装置 |
| KR100870013B1 (ko) * | 2002-08-27 | 2008-11-21 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| JP2004119923A (ja) | 2002-09-30 | 2004-04-15 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| JP4651929B2 (ja) * | 2002-11-15 | 2011-03-16 | Ｎｅｃ液晶テクノロジー株式会社 | 液晶表示装置の製造方法 |
| KR100904757B1 (ko) | 2002-12-30 | 2009-06-29 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 제조방법 |
| KR100640211B1 (ko) * | 2003-04-03 | 2006-10-31 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 제조방법 |
| KR101160823B1 (ko) * | 2004-08-24 | 2012-06-29 | 삼성전자주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 |
| KR101117979B1 (ko) * | 2004-12-24 | 2012-03-06 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 |
| KR101189271B1 (ko) * | 2005-07-12 | 2012-10-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
-
2005
- 2005-07-12 KR KR1020050062730A patent/KR101189271B1/ko not_active Expired - Fee Related
-
2006
- 2006-06-30 TW TW095124016A patent/TWI402988B/zh not_active IP Right Cessation
- 2006-07-07 CN CN200610098474XA patent/CN1897285B/zh not_active Expired - Fee Related
- 2006-07-12 US US11/486,330 patent/US7371621B2/en active Active
- 2006-07-12 JP JP2006191725A patent/JP5156203B2/ja not_active Expired - Fee Related
-
2008
- 2008-04-08 US US12/099,718 patent/US7888675B2/en active Active
-
2010
- 2010-04-22 US US12/765,698 patent/US8173493B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0669236A (ja) * | 1992-07-14 | 1994-03-11 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
| JPH06267983A (ja) * | 1993-03-16 | 1994-09-22 | Hitachi Ltd | 薄膜トランジスタ及びその製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1897285B (zh) | 2010-05-12 |
| KR20070008868A (ko) | 2007-01-18 |
| JP2007027735A (ja) | 2007-02-01 |
| US20080203393A1 (en) | 2008-08-28 |
| US20070012967A1 (en) | 2007-01-18 |
| US7888675B2 (en) | 2011-02-15 |
| US20100203715A1 (en) | 2010-08-12 |
| JP5156203B2 (ja) | 2013-03-06 |
| US8173493B2 (en) | 2012-05-08 |
| TW200715561A (en) | 2007-04-16 |
| CN1897285A (zh) | 2007-01-17 |
| KR101189271B1 (ko) | 2012-10-09 |
| US7371621B2 (en) | 2008-05-13 |
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