JP5156203B2 - 薄膜トランジスタ表示板及びその製造方法 - Google Patents

薄膜トランジスタ表示板及びその製造方法 Download PDF

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Publication number
JP5156203B2
JP5156203B2 JP2006191725A JP2006191725A JP5156203B2 JP 5156203 B2 JP5156203 B2 JP 5156203B2 JP 2006191725 A JP2006191725 A JP 2006191725A JP 2006191725 A JP2006191725 A JP 2006191725A JP 5156203 B2 JP5156203 B2 JP 5156203B2
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JP
Japan
Prior art keywords
conductive layer
thin film
film transistor
molybdenum
transistor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006191725A
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English (en)
Japanese (ja)
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JP2007027735A (ja
JP2007027735A5 (enExample
Inventor
湘 甲 金
禹 根 李
時 烈 金
振 豪 周
彰 洙 金
尚佑 皇甫
▲皎▼ 錫 呉
慧 英 柳
洪 基 秦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
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Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of JP2007027735A publication Critical patent/JP2007027735A/ja
Publication of JP2007027735A5 publication Critical patent/JP2007027735A5/ja
Application granted granted Critical
Publication of JP5156203B2 publication Critical patent/JP5156203B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006191725A 2005-07-12 2006-07-12 薄膜トランジスタ表示板及びその製造方法 Expired - Fee Related JP5156203B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050062730A KR101189271B1 (ko) 2005-07-12 2005-07-12 박막 트랜지스터 표시판 및 그 제조 방법
KR10-2005-0062730 2005-07-12

Publications (3)

Publication Number Publication Date
JP2007027735A JP2007027735A (ja) 2007-02-01
JP2007027735A5 JP2007027735A5 (enExample) 2009-08-27
JP5156203B2 true JP5156203B2 (ja) 2013-03-06

Family

ID=37609731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006191725A Expired - Fee Related JP5156203B2 (ja) 2005-07-12 2006-07-12 薄膜トランジスタ表示板及びその製造方法

Country Status (5)

Country Link
US (3) US7371621B2 (enExample)
JP (1) JP5156203B2 (enExample)
KR (1) KR101189271B1 (enExample)
CN (1) CN1897285B (enExample)
TW (1) TWI402988B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5247070B2 (ja) * 2007-06-12 2013-07-24 株式会社ジャパンディスプレイウェスト 液晶表示パネル及びその製造方法
CN101593756B (zh) * 2008-05-28 2011-05-18 群康科技(深圳)有限公司 薄膜晶体管基板、薄膜晶体管基板制造方法及显示装置
US8227278B2 (en) * 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101628254B1 (ko) * 2009-09-21 2016-06-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US8785241B2 (en) * 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2693420B1 (en) * 2011-03-30 2019-05-08 Sharp Kabushiki Kaisha Active matrix substrate, display device, and active matrix substrate manufacturing method
CN102184966B (zh) * 2011-04-15 2013-02-13 福州华映视讯有限公司 晶体管数组基板
CN102508385A (zh) * 2011-11-17 2012-06-20 华映视讯（吴江）有限公司 像素结构、阵列基板及其制作方法
WO2014054487A1 (ja) * 2012-10-02 2014-04-10 シャープ株式会社 液晶パネル、及び製造方法
US20140199833A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Methods for performing a via reveal etching process for forming through-silicon vias in a substrate
CN103811327A (zh) * 2014-02-14 2014-05-21 上海和辉光电有限公司 薄膜晶体管的制作方法
CN106653772B (zh) * 2016-12-30 2019-10-01 惠科股份有限公司 一种显示面板及制程
KR102748667B1 (ko) 2019-10-30 2025-01-02 삼성디스플레이 주식회사 표시 장치, 패턴 형성 방법 및 표시 장치의 제조 방법
KR20220065949A (ko) * 2020-11-13 2022-05-23 삼성디스플레이 주식회사 표시 장치

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KR101160823B1 (ko) * 2004-08-24 2012-06-29 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
KR101117979B1 (ko) * 2004-12-24 2012-03-06 엘지디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Also Published As

Publication number Publication date
CN1897285B (zh) 2010-05-12
KR20070008868A (ko) 2007-01-18
JP2007027735A (ja) 2007-02-01
US20080203393A1 (en) 2008-08-28
US20070012967A1 (en) 2007-01-18
US7888675B2 (en) 2011-02-15
US20100203715A1 (en) 2010-08-12
US8173493B2 (en) 2012-05-08
TW200715561A (en) 2007-04-16
CN1897285A (zh) 2007-01-17
TWI402988B (zh) 2013-07-21
KR101189271B1 (ko) 2012-10-09
US7371621B2 (en) 2008-05-13

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