KR101189271B1 - 박막 트랜지스터 표시판 및 그 제조 방법 - Google Patents

박막 트랜지스터 표시판 및 그 제조 방법 Download PDF

Info

Publication number
KR101189271B1
KR101189271B1 KR1020050062730A KR20050062730A KR101189271B1 KR 101189271 B1 KR101189271 B1 KR 101189271B1 KR 1020050062730 A KR1020050062730 A KR 1020050062730A KR 20050062730 A KR20050062730 A KR 20050062730A KR 101189271 B1 KR101189271 B1 KR 101189271B1
Authority
KR
South Korea
Prior art keywords
conductive layer
molybdenum
layer
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050062730A
Other languages
English (en)
Korean (ko)
Other versions
KR20070008868A (ko
Inventor
김상갑
이우근
김시열
주진호
김장수
황보상우
오민석
류혜영
진홍기
Original Assignee
삼성디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020050062730A priority Critical patent/KR101189271B1/ko
Priority to TW095124016A priority patent/TWI402988B/zh
Priority to CN200610098474XA priority patent/CN1897285B/zh
Priority to US11/486,330 priority patent/US7371621B2/en
Priority to JP2006191725A priority patent/JP5156203B2/ja
Publication of KR20070008868A publication Critical patent/KR20070008868A/ko
Priority to US12/099,718 priority patent/US7888675B2/en
Priority to US12/765,698 priority patent/US8173493B2/en
Application granted granted Critical
Publication of KR101189271B1 publication Critical patent/KR101189271B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020050062730A 2005-07-12 2005-07-12 박막 트랜지스터 표시판 및 그 제조 방법 Expired - Fee Related KR101189271B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020050062730A KR101189271B1 (ko) 2005-07-12 2005-07-12 박막 트랜지스터 표시판 및 그 제조 방법
TW095124016A TWI402988B (zh) 2005-07-12 2006-06-30 薄膜電晶體陣列面板以及其製造方法
CN200610098474XA CN1897285B (zh) 2005-07-12 2006-07-07 薄膜晶体管阵列面板及制造方法
JP2006191725A JP5156203B2 (ja) 2005-07-12 2006-07-12 薄膜トランジスタ表示板及びその製造方法
US11/486,330 US7371621B2 (en) 2005-07-12 2006-07-12 Thin film transistor array panel and fabrication
US12/099,718 US7888675B2 (en) 2005-07-12 2008-04-08 Thin film transistor array panel and fabrication
US12/765,698 US8173493B2 (en) 2005-07-12 2010-04-22 Thin film transistor array panel and fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050062730A KR101189271B1 (ko) 2005-07-12 2005-07-12 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20070008868A KR20070008868A (ko) 2007-01-18
KR101189271B1 true KR101189271B1 (ko) 2012-10-09

Family

ID=37609731

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050062730A Expired - Fee Related KR101189271B1 (ko) 2005-07-12 2005-07-12 박막 트랜지스터 표시판 및 그 제조 방법

Country Status (5)

Country Link
US (3) US7371621B2 (enExample)
JP (1) JP5156203B2 (enExample)
KR (1) KR101189271B1 (enExample)
CN (1) CN1897285B (enExample)
TW (1) TWI402988B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP5247070B2 (ja) * 2007-06-12 2013-07-24 株式会社ジャパンディスプレイウェスト 液晶表示パネル及びその製造方法
CN101593756B (zh) * 2008-05-28 2011-05-18 群康科技(深圳)有限公司 薄膜晶体管基板、薄膜晶体管基板制造方法及显示装置
US8227278B2 (en) * 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101628254B1 (ko) * 2009-09-21 2016-06-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US8785241B2 (en) * 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2693420B1 (en) * 2011-03-30 2019-05-08 Sharp Kabushiki Kaisha Active matrix substrate, display device, and active matrix substrate manufacturing method
CN102184966B (zh) * 2011-04-15 2013-02-13 福州华映视讯有限公司 晶体管数组基板
CN102508385A (zh) * 2011-11-17 2012-06-20 华映视讯（吴江）有限公司 像素结构、阵列基板及其制作方法
WO2014054487A1 (ja) * 2012-10-02 2014-04-10 シャープ株式会社 液晶パネル、及び製造方法
US20140199833A1 (en) * 2013-01-11 2014-07-17 Applied Materials, Inc. Methods for performing a via reveal etching process for forming through-silicon vias in a substrate
CN103811327A (zh) * 2014-02-14 2014-05-21 上海和辉光电有限公司 薄膜晶体管的制作方法
CN106653772B (zh) * 2016-12-30 2019-10-01 惠科股份有限公司 一种显示面板及制程
KR102748667B1 (ko) 2019-10-30 2025-01-02 삼성디스플레이 주식회사 표시 장치, 패턴 형성 방법 및 표시 장치의 제조 방법
KR20220065949A (ko) * 2020-11-13 2022-05-23 삼성디스플레이 주식회사 표시 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849872B1 (en) * 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP2558995B2 (ja) * 1992-07-14 1996-11-27 松下電器産業株式会社 薄膜トランジスタの製造方法
JPH06267983A (ja) * 1993-03-16 1994-09-22 Hitachi Ltd 薄膜トランジスタ及びその製法
US5923050A (en) * 1995-02-08 1999-07-13 Samsung Electronics Co., Ltd. Amorphous silicon TFT
JPH08264790A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 薄膜電解効果トランジスタ及び液晶表示装置
KR100552283B1 (ko) 1998-01-22 2006-06-23 삼성전자주식회사 몰리브덴및몰리브덴합금을이용한박막트랜지스터기판및그제조방법
JP2000056284A (ja) 1998-08-10 2000-02-25 Toshiba Corp 液晶表示装置の製造方法
US6380558B1 (en) * 1998-12-29 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6287899B1 (en) * 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
KR100321227B1 (ko) 2000-03-18 2004-09-07 테크노세미켐 주식회사 액정표시장치의전극용식각액
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
JP4920140B2 (ja) 2001-05-18 2012-04-18 ゲットナー・ファンデーション・エルエルシー 液晶表示装置及びその製造方法
JP3953330B2 (ja) * 2002-01-25 2007-08-08 三洋電機株式会社 表示装置
KR100870013B1 (ko) * 2002-08-27 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
JP2004119923A (ja) 2002-09-30 2004-04-15 Seiko Epson Corp 半導体装置およびその製造方法
JP4651929B2 (ja) * 2002-11-15 2011-03-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
KR100904757B1 (ko) 2002-12-30 2009-06-29 엘지디스플레이 주식회사 액정표시장치 및 그의 제조방법
KR100640211B1 (ko) * 2003-04-03 2006-10-31 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
KR101160823B1 (ko) * 2004-08-24 2012-06-29 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
KR101117979B1 (ko) * 2004-12-24 2012-03-06 엘지디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Also Published As

Publication number Publication date
CN1897285B (zh) 2010-05-12
KR20070008868A (ko) 2007-01-18
JP2007027735A (ja) 2007-02-01
US20080203393A1 (en) 2008-08-28
US20070012967A1 (en) 2007-01-18
US7888675B2 (en) 2011-02-15
US20100203715A1 (en) 2010-08-12
JP5156203B2 (ja) 2013-03-06
US8173493B2 (en) 2012-05-08
TW200715561A (en) 2007-04-16
CN1897285A (zh) 2007-01-17
TWI402988B (zh) 2013-07-21
US7371621B2 (en) 2008-05-13

Similar Documents

Publication Publication Date Title
KR101189271B1 (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20120090368A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR101326128B1 (ko) 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법
US8389454B2 (en) Manufacturing and cleansing of thin film transistor panels
KR20060131071A (ko) 표시 장치용 배선, 이를 포함하는 박막 트랜지스터 표시판및 그 제조 방법
KR101251995B1 (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR101171187B1 (ko) 박막 트랜지스터 표시판, 그 제조 방법 및 이를 포함하는액정 표시 장치
KR20080019398A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR101184640B1 (ko) 박막 트랜지스터 표시판 및 그 제조 방법
US20060065894A1 (en) Thin film transistor array panel and manufacturing method thereof
KR20070092455A (ko) 표시 장치 및 그 제조 방법
KR20080034598A (ko) 박막 트랜지스터 표시판의 제조 방법
KR101282404B1 (ko) 액정 표시 장치의 제조 방법
KR20070008869A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20070046321A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20070039275A (ko) 박막 트랜지스터 표시판
KR20080030761A (ko) 박막 트랜지스터 표시판의 제조 방법
KR20070039758A (ko) 박막 트랜지스터 표시판의 제조 방법
KR20070079377A (ko) 박막 트랜지스터 표시판 및 그 의 제조 방법
KR20080053645A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20070007563A (ko) 박막 트랜지스터 표시판의 제조 방법
KR20080049985A (ko) 액정 표시 장치 및 그 제조 방법
KR20060040327A (ko) 박막 트랜지스터 표시판 및 그 제조 방법
KR20080051483A (ko) 박막 트랜지스터 기판의 제조 방법
KR20060099143A (ko) 액정 표시 장치 및 그 제조 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20150930

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20161003

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20161003

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000