JP2021015954A5 - - Google Patents

Download PDF

Info

Publication number
JP2021015954A5
JP2021015954A5 JP2020055139A JP2020055139A JP2021015954A5 JP 2021015954 A5 JP2021015954 A5 JP 2021015954A5 JP 2020055139 A JP2020055139 A JP 2020055139A JP 2020055139 A JP2020055139 A JP 2020055139A JP 2021015954 A5 JP2021015954 A5 JP 2021015954A5
Authority
JP
Japan
Prior art keywords
oxide semiconductor
tft
insulating layer
source
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020055139A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021015954A (ja
JP7497185B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to US16/925,477 priority Critical patent/US11342364B2/en
Priority to CN202010662297.3A priority patent/CN112216705B/zh
Publication of JP2021015954A publication Critical patent/JP2021015954A/ja
Publication of JP2021015954A5 publication Critical patent/JP2021015954A5/ja
Application granted granted Critical
Publication of JP7497185B2 publication Critical patent/JP7497185B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020055139A 2019-07-11 2020-03-25 薄膜トランジスタ基板 Active JP7497185B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/925,477 US11342364B2 (en) 2019-07-11 2020-07-10 Thin-film transistor substrate
CN202010662297.3A CN112216705B (zh) 2019-07-11 2020-07-10 薄膜晶体管衬底

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019128954 2019-07-11
JP2019128954 2019-07-11

Publications (3)

Publication Number Publication Date
JP2021015954A JP2021015954A (ja) 2021-02-12
JP2021015954A5 true JP2021015954A5 (enExample) 2023-03-14
JP7497185B2 JP7497185B2 (ja) 2024-06-10

Family

ID=74530750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020055139A Active JP7497185B2 (ja) 2019-07-11 2020-03-25 薄膜トランジスタ基板

Country Status (1)

Country Link
JP (1) JP7497185B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023286168A1 (ja) * 2021-07-13 2023-01-19 シャープディスプレイテクノロジー株式会社 表示装置
CN113629070B (zh) * 2021-07-21 2022-07-12 深圳市华星光电半导体显示技术有限公司 阵列基板、阵列基板的制作方法及显示面板
CN115274689A (zh) * 2022-07-06 2022-11-01 深圳市华星光电半导体显示技术有限公司 驱动基板及驱动基板的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581257B2 (en) * 2010-04-07 2013-11-12 Sharp Kabushiki Kaisha Circuit board and display device
JP2014195060A (ja) * 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd センサ回路及びセンサ回路を用いた半導体装置
US20170184893A1 (en) * 2014-07-11 2017-06-29 Sharp Kabushiki Kaisha Semiconductor apparatus, method of manufacturing same, and liquid crystal display apparatus

Similar Documents

Publication Publication Date Title
CN109273409B (zh) 一种显示面板、其制作方法及显示装置
CN107331669B (zh) Tft驱动背板的制作方法
CN107248373B (zh) 一种显示面板及制作方法、显示装置
CN102646633B (zh) 阵列基板及其制作方法
CN103745978A (zh) 显示装置、阵列基板及其制造方法
TWI456663B (zh) 顯示裝置之製造方法
JP6437574B2 (ja) 薄膜トランジスタおよびその製造方法、アレイ基板、並びに表示装置
CN110620120B (zh) 阵列基板及其制作方法、显示装置
CN103311310A (zh) 一种薄膜晶体管及其制备方法、阵列基板
CN108198825B (zh) 一种阵列基板及其制备方法、显示面板
US9842915B2 (en) Array substrate for liquid crystal display device and method of manufacturing the same
JP2021015954A5 (enExample)
CN103137492B (zh) 制造氧化物薄膜晶体管的方法和显示装置
WO2017008347A1 (zh) 阵列基板、阵列基板的制造方法及显示装置
KR102224457B1 (ko) 표시장치와 그 제조 방법
WO2016026207A1 (zh) 阵列基板及其制作方法和显示装置
CN105990332B (zh) 薄膜晶体管基板及其显示面板
KR20090011704A (ko) 박막 트랜지스터 기판 및 그 제조 방법
WO2017028493A1 (zh) 薄膜晶体管及其制作方法、显示器件
WO2018077239A1 (zh) 显示基板及其制造方法、显示装置
CN109728003B (zh) 显示基板、显示装置和显示基板的制造方法
CN107735853A (zh) 薄膜晶体管制造方法及阵列基板
TWI528564B (zh) 薄膜電晶體及其製作方法
CN104681626A (zh) 氧化物薄膜晶体管及其制作方法、阵列基板
WO2014117444A1 (zh) 阵列基板及其制作方法、显示装置