JP7497185B2 - 薄膜トランジスタ基板 - Google Patents
薄膜トランジスタ基板 Download PDFInfo
- Publication number
- JP7497185B2 JP7497185B2 JP2020055139A JP2020055139A JP7497185B2 JP 7497185 B2 JP7497185 B2 JP 7497185B2 JP 2020055139 A JP2020055139 A JP 2020055139A JP 2020055139 A JP2020055139 A JP 2020055139A JP 7497185 B2 JP7497185 B2 JP 7497185B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- thin film
- film transistor
- insulating layer
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 217
- 239000010409 thin film Substances 0.000 title claims description 97
- 239000004065 semiconductor Substances 0.000 claims description 492
- 239000010408 film Substances 0.000 claims description 383
- 238000004519 manufacturing process Methods 0.000 claims description 128
- 238000000034 method Methods 0.000 claims description 60
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 239000003990 capacitor Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 291
- 239000011229 interlayer Substances 0.000 description 38
- 238000005530 etching Methods 0.000 description 36
- 238000000206 photolithography Methods 0.000 description 36
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 32
- 239000004973 liquid crystal related substance Substances 0.000 description 25
- 238000004544 sputter deposition Methods 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 18
- 230000037230 mobility Effects 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 238000000059 patterning Methods 0.000 description 15
- 238000007789 sealing Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 102100032566 Carbonic anhydrase-related protein 10 Human genes 0.000 description 4
- 101000867836 Homo sapiens Carbonic anhydrase-related protein 10 Proteins 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005555 GaZnO Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910003077 Ti−O Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/925,477 US11342364B2 (en) | 2019-07-11 | 2020-07-10 | Thin-film transistor substrate |
| CN202010662297.3A CN112216705B (zh) | 2019-07-11 | 2020-07-10 | 薄膜晶体管衬底 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019128954 | 2019-07-11 | ||
| JP2019128954 | 2019-07-11 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021015954A JP2021015954A (ja) | 2021-02-12 |
| JP2021015954A5 JP2021015954A5 (enExample) | 2023-03-14 |
| JP7497185B2 true JP7497185B2 (ja) | 2024-06-10 |
Family
ID=74530750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020055139A Active JP7497185B2 (ja) | 2019-07-11 | 2020-03-25 | 薄膜トランジスタ基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7497185B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023286168A1 (ja) * | 2021-07-13 | 2023-01-19 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
| CN113629070B (zh) * | 2021-07-21 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板、阵列基板的制作方法及显示面板 |
| CN115274689A (zh) * | 2022-07-06 | 2022-11-01 | 深圳市华星光电半导体显示技术有限公司 | 驱动基板及驱动基板的制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011125353A1 (ja) | 2010-04-07 | 2011-10-13 | シャープ株式会社 | 回路基板、表示装置および回路基板の製造方法 |
| JP2014195060A (ja) | 2013-03-01 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | センサ回路及びセンサ回路を用いた半導体装置 |
| WO2016006530A1 (ja) | 2014-07-11 | 2016-01-14 | シャープ株式会社 | 半導体装置およびその製造方法、ならびに液晶表示装置 |
-
2020
- 2020-03-25 JP JP2020055139A patent/JP7497185B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011125353A1 (ja) | 2010-04-07 | 2011-10-13 | シャープ株式会社 | 回路基板、表示装置および回路基板の製造方法 |
| JP2014195060A (ja) | 2013-03-01 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | センサ回路及びセンサ回路を用いた半導体装置 |
| WO2016006530A1 (ja) | 2014-07-11 | 2016-01-14 | シャープ株式会社 | 半導体装置およびその製造方法、ならびに液晶表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2021015954A (ja) | 2021-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11342364B2 (en) | Thin-film transistor substrate | |
| CN107818968B (zh) | 包括测试单元的显示设备 | |
| TWI688091B (zh) | 具有矽及半導電性氧化物薄膜電晶體之顯示器 | |
| CN114639343B (zh) | 有机发光显示装置 | |
| KR20190027978A (ko) | 유기 발광 표시 장치 | |
| JP7497185B2 (ja) | 薄膜トランジスタ基板 | |
| JP7510483B2 (ja) | 有機電界発光表示装置 | |
| US12217700B2 (en) | Display apparatus | |
| CN111009552A (zh) | 显示装置 | |
| CN100530278C (zh) | 显示器件 | |
| WO2020066020A1 (ja) | 表示装置およびその製造方法 | |
| WO2021005855A1 (ja) | 表示装置 | |
| TWI402799B (zh) | 顯示裝置 | |
| CN114649378A (zh) | 有机发光显示面板及有机发光显示装置 | |
| JP4823651B2 (ja) | 発光装置及びその作製方法 | |
| JP7490504B2 (ja) | 表示装置 | |
| US12118935B2 (en) | Display substrate and display apparatus | |
| US20240347684A1 (en) | Display apparatus and method of manufacturing the same | |
| US20250140141A1 (en) | Test circuit and display device including the same | |
| US20240381709A1 (en) | Display Substrate, Preparation Method Therefor, and Display Apparatus | |
| US20230240104A1 (en) | Display device and manufacturing method thereof | |
| US20250089485A1 (en) | Display Panel and Display Apparatus | |
| JP2024077588A (ja) | 薄膜トランジスタ基板 | |
| JP2025102663A (ja) | 表示装置 | |
| JP4849876B2 (ja) | 表示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20200904 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230306 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230306 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231130 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231212 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240311 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240521 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240529 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7497185 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |