JP2005243951A5 - - Google Patents

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Publication number
JP2005243951A5
JP2005243951A5 JP2004052284A JP2004052284A JP2005243951A5 JP 2005243951 A5 JP2005243951 A5 JP 2005243951A5 JP 2004052284 A JP2004052284 A JP 2004052284A JP 2004052284 A JP2004052284 A JP 2004052284A JP 2005243951 A5 JP2005243951 A5 JP 2005243951A5
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JP
Japan
Prior art keywords
film
semiconductor film
amorphous semiconductor
forming
resist mask
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Application number
JP2004052284A
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English (en)
Japanese (ja)
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JP2005243951A (ja
JP4578826B2 (ja
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Priority to JP2004052284A priority Critical patent/JP4578826B2/ja
Priority claimed from JP2004052284A external-priority patent/JP4578826B2/ja
Publication of JP2005243951A publication Critical patent/JP2005243951A/ja
Publication of JP2005243951A5 publication Critical patent/JP2005243951A5/ja
Application granted granted Critical
Publication of JP4578826B2 publication Critical patent/JP4578826B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004052284A 2004-02-26 2004-02-26 半導体装置の作製方法 Expired - Fee Related JP4578826B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004052284A JP4578826B2 (ja) 2004-02-26 2004-02-26 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004052284A JP4578826B2 (ja) 2004-02-26 2004-02-26 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005243951A JP2005243951A (ja) 2005-09-08
JP2005243951A5 true JP2005243951A5 (enExample) 2007-03-15
JP4578826B2 JP4578826B2 (ja) 2010-11-10

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ID=35025356

Family Applications (1)

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JP2004052284A Expired - Fee Related JP4578826B2 (ja) 2004-02-26 2004-02-26 半導体装置の作製方法

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JP (1) JP4578826B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8790959B2 (en) 2005-09-29 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7633089B2 (en) * 2007-07-26 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device provided with the same
WO2009063606A1 (ja) * 2007-11-15 2009-05-22 Sharp Kabushiki Kaisha 薄膜トランジスタ、薄膜トランジスタの作製方法、及び表示装置
US8187956B2 (en) * 2007-12-03 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR102413263B1 (ko) 2008-09-19 2022-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8841661B2 (en) * 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
KR102503687B1 (ko) 2009-07-03 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI582951B (zh) * 2009-08-07 2017-05-11 半導體能源研究所股份有限公司 半導體裝置及包括該半導體裝置之電話、錶、和顯示裝置
WO2011027676A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907041A (en) * 1988-09-16 1990-03-06 Xerox Corporation Intra-gate offset high voltage thin film transistor with misalignment immunity
JPH05226362A (ja) * 1992-02-12 1993-09-03 Seiko Epson Corp 半導体装置の製造方法
JP2835798B2 (ja) * 1992-04-15 1998-12-14 キヤノン株式会社 非単結晶シリコン半導体
JPH06168886A (ja) * 1992-11-30 1994-06-14 Tonen Corp プラズマｃｖｄによる薄膜形成方法
JPH07131030A (ja) * 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
JP3380527B2 (ja) * 1994-03-11 2003-02-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH0817738A (ja) * 1994-06-24 1996-01-19 Mitsui Toatsu Chem Inc 結晶性半導体薄膜形成方法
JPH11214699A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4357672B2 (ja) * 1998-11-11 2009-11-04 株式会社半導体エネルギー研究所 露光装置および露光方法および半導体装置の作製方法
JP2001127306A (ja) * 2000-08-21 2001-05-11 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置
JP4789322B2 (ja) * 2000-12-28 2011-10-12 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8790959B2 (en) 2005-09-29 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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