JP2009124122A5 - - Google Patents

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Publication number
JP2009124122A5
JP2009124122A5 JP2008269014A JP2008269014A JP2009124122A5 JP 2009124122 A5 JP2009124122 A5 JP 2009124122A5 JP 2008269014 A JP2008269014 A JP 2008269014A JP 2008269014 A JP2008269014 A JP 2008269014A JP 2009124122 A5 JP2009124122 A5 JP 2009124122A5
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JP
Japan
Prior art keywords
photoresist pattern
semiconductor film
film
forming
semiconductor
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JP2008269014A
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English (en)
Japanese (ja)
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JP2009124122A (ja
JP5427390B2 (ja
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Priority to JP2008269014A priority Critical patent/JP5427390B2/ja
Priority claimed from JP2008269014A external-priority patent/JP5427390B2/ja
Publication of JP2009124122A publication Critical patent/JP2009124122A/ja
Publication of JP2009124122A5 publication Critical patent/JP2009124122A5/ja
Application granted granted Critical
Publication of JP5427390B2 publication Critical patent/JP5427390B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008269014A 2007-10-23 2008-10-17 半導体装置の作製方法 Expired - Fee Related JP5427390B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008269014A JP5427390B2 (ja) 2007-10-23 2008-10-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007275804 2007-10-23
JP2007275804 2007-10-23
JP2008269014A JP5427390B2 (ja) 2007-10-23 2008-10-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009124122A JP2009124122A (ja) 2009-06-04
JP2009124122A5 true JP2009124122A5 (enExample) 2011-10-27
JP5427390B2 JP5427390B2 (ja) 2014-02-26

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Family Applications (1)

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JP2008269014A Expired - Fee Related JP5427390B2 (ja) 2007-10-23 2008-10-17 半導体装置の作製方法

Country Status (2)

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US (1) US7776664B2 (enExample)
JP (1) JP5427390B2 (enExample)

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JP5357493B2 (ja) * 2007-10-23 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101448903B1 (ko) * 2007-10-23 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
KR101446249B1 (ko) 2007-12-03 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
JP5503995B2 (ja) * 2009-02-13 2014-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2302359A1 (en) 2009-09-24 2011-03-30 Université De Reims Champagne-Ardenne Serum infrared spectroscopy for non invasive assessment of hepatic fibrosis in patients with chronic liver disease
JP5348002B2 (ja) * 2010-02-10 2013-11-20 カシオ計算機株式会社 薄膜トランジスタ基板の製造方法
JP5743064B2 (ja) * 2011-02-17 2015-07-01 株式会社Ｊｏｌｅｄ 薄膜トランジスタおよびその製造方法、並びに表示装置
CN102655146B (zh) * 2012-02-27 2013-06-12 京东方科技集团股份有限公司 阵列基板、阵列基板的制备方法及显示装置
CN102707575B (zh) * 2012-05-18 2015-02-25 北京京东方光电科技有限公司 掩模板及制造阵列基板的方法
CN102738007B (zh) * 2012-07-02 2014-09-03 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
CN104040693B (zh) * 2012-12-04 2017-12-12 深圳市柔宇科技有限公司 一种金属氧化物tft器件及制造方法
GB2561004B (en) 2017-03-31 2022-06-01 Pragmatic Printing Ltd Electronic structures and their methods of manufacture
US20200035709A1 (en) * 2018-07-30 2020-01-30 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method for manufacturing thin-film transistor array substrate and thin-film transistor array substrate

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