JP5427390B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5427390B2
JP5427390B2 JP2008269014A JP2008269014A JP5427390B2 JP 5427390 B2 JP5427390 B2 JP 5427390B2 JP 2008269014 A JP2008269014 A JP 2008269014A JP 2008269014 A JP2008269014 A JP 2008269014A JP 5427390 B2 JP5427390 B2 JP 5427390B2
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Prior art keywords
photoresist pattern
film
semiconductor film
forming
photomask
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Expired - Fee Related
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JP2008269014A
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English (en)
Japanese (ja)
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JP2009124122A (ja
JP2009124122A5 (enExample
Inventor
最史 藤川
邦雄 細谷
陽子 千葉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008269014A priority Critical patent/JP5427390B2/ja
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Publication of JP2009124122A5 publication Critical patent/JP2009124122A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2008269014A 2007-10-23 2008-10-17 半導体装置の作製方法 Expired - Fee Related JP5427390B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008269014A JP5427390B2 (ja) 2007-10-23 2008-10-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007275804 2007-10-23
JP2007275804 2007-10-23
JP2008269014A JP5427390B2 (ja) 2007-10-23 2008-10-17 半導体装置の作製方法

Publications (3)

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JP2009124122A JP2009124122A (ja) 2009-06-04
JP2009124122A5 JP2009124122A5 (enExample) 2011-10-27
JP5427390B2 true JP5427390B2 (ja) 2014-02-26

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JP2008269014A Expired - Fee Related JP5427390B2 (ja) 2007-10-23 2008-10-17 半導体装置の作製方法

Country Status (2)

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US (1) US7776664B2 (enExample)
JP (1) JP5427390B2 (enExample)

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JP5357493B2 (ja) * 2007-10-23 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101448903B1 (ko) * 2007-10-23 2014-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제작방법
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
KR101446249B1 (ko) 2007-12-03 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
JP5503995B2 (ja) * 2009-02-13 2014-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2302359A1 (en) 2009-09-24 2011-03-30 Université De Reims Champagne-Ardenne Serum infrared spectroscopy for non invasive assessment of hepatic fibrosis in patients with chronic liver disease
JP5348002B2 (ja) * 2010-02-10 2013-11-20 カシオ計算機株式会社 薄膜トランジスタ基板の製造方法
JP5743064B2 (ja) * 2011-02-17 2015-07-01 株式会社Ｊｏｌｅｄ 薄膜トランジスタおよびその製造方法、並びに表示装置
CN102655146B (zh) * 2012-02-27 2013-06-12 京东方科技集团股份有限公司 阵列基板、阵列基板的制备方法及显示装置
CN102707575B (zh) * 2012-05-18 2015-02-25 北京京东方光电科技有限公司 掩模板及制造阵列基板的方法
CN102738007B (zh) * 2012-07-02 2014-09-03 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
CN104040693B (zh) * 2012-12-04 2017-12-12 深圳市柔宇科技有限公司 一种金属氧化物tft器件及制造方法
GB2561004B (en) 2017-03-31 2022-06-01 Pragmatic Printing Ltd Electronic structures and their methods of manufacture
US20200035709A1 (en) * 2018-07-30 2020-01-30 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method for manufacturing thin-film transistor array substrate and thin-film transistor array substrate

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TWI400758B (zh) * 2005-12-28 2013-07-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
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KR101277218B1 (ko) * 2006-06-29 2013-06-24 엘지디스플레이 주식회사 박막 트랜지스터 제조방법 및 액정표시소자의 제조방법

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Publication number Publication date
US7776664B2 (en) 2010-08-17
JP2009124122A (ja) 2009-06-04
US20090117691A1 (en) 2009-05-07

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