JP5503995B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5503995B2 JP5503995B2 JP2010027443A JP2010027443A JP5503995B2 JP 5503995 B2 JP5503995 B2 JP 5503995B2 JP 2010027443 A JP2010027443 A JP 2010027443A JP 2010027443 A JP2010027443 A JP 2010027443A JP 5503995 B2 JP5503995 B2 JP 5503995B2
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Images
Classifications
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
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- H01L29/66409—Unipolar field-effect transistors
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- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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Description
本実施の形態では、薄膜トランジスタの作製方法の一例について、図1乃至図6を参照して説明する。
本実施の形態では、実施の形態1で示した作製方法とは異なる薄膜トランジスタの作製方法の一例について、図7及び図8を参照して説明する。
本実施の形態では、薄膜トランジスタの作製方法及び該薄膜トランジスタがマトリクス状に配置されたEL表示装置の作製方法の一例について、図9乃至図23を参照して説明する。
本実施の形態では、実施の形態3とは異なる薄膜トランジスタの作製方法及び該薄膜トランジスタがマトリクス状に配置されたEL表示装置の作製方法の一例について、図27乃至図44を参照して説明する。
本実施の形態は、実施の形態1乃至実施の形態4にて説明した方法により作製した表示パネル又は表示装置を表示部として組み込んだ電子機器について図45乃至図47を参照して説明する。このような電子機器としては、例えば、ビデオカメラ若しくはデジタルカメラ等のカメラ、ヘッドマウントディスプレイ(ゴーグル型ディスプレイ)、カーナビゲーション、プロジェクタ、カーステレオ、パーソナルコンピュータ、携帯情報端末(モバイルコンピュータ、携帯電話または電子書籍等)が挙げられる。それらの一例を図45に示す。
本実施の形態では、本発明の薄膜トランジスタを用いて作製した半導体装置の一例を示す。
12 トランジスタ
13 トランジスタ
14 容量素子
15 発光素子
16 ゲート配線
17 電源線
18 ソース配線
19 電源線
20 共通電極
21 画素
31 容量素子
32 トランジスタ
33 トランジスタ
34 発光素子
35 電源線
36 ゲート配線
37 ソース配線
40 共通電極
41 画素
100 基板
110 導電膜
114 絶縁層
118 レジストマスク
132 レーザー光
140 グレートーンマスク
141 基板
142 遮光部
143 回折格子部
145 ハーフトーンマスク
146 基板
147 半透光部
148 遮光部
200 単結晶半導体基板
201 絶縁膜
202 導電膜
202A ゲート電極層
210 単結晶半導体基板
212 脆化領域
215 絶縁膜
216 単結晶半導体層
220 単結晶半導体層
221 不純物半導体膜
225 単結晶半導体層
230 イオン
301 レジストマスク
302 レジストマスク
303 レジストマスク
304 レジストマスク
310 導電膜
310A ドレイン電極層
320A ドレイン電極層
320A ドレイン電極層
312 レジストマスク
313 レジストマスク
314 薄膜積層体
318 レジストマスク
330 不純物元素
401 レジストマスク
402 レジストマスク
412 レジストマスク
430 不純物元素
502 単結晶半導体層
516 ゲート電極層
516A ゲート電極層
516B ゲート電極層
516C ゲート電極層
518 レジストマスク
518A レジストマスク
518B レジストマスク
518C レジストマスク
518D レジストマスク
518E レジストマスク
518F レジストマスク
520 単結晶半導体層
526 保護膜
528 保護膜
530 開口部
530A 開口部
530B 開口部
530C 開口部
530D 開口部
531 開口部
532 画素電極層
532A 画素電極層
532B 画素電極層
532C 画素電極層
560A 開口部
560B 開口部
560C 開口部
560D 開口部
561 開口部
620 ドレイン電極層
620A ドレイン電極層
620B ドレイン電極層
620C ドレイン電極層
620D ドレイン電極層
620E ドレイン電極層
620F ドレイン電極層
630 開口部
630A 開口部
630B 開口部
631 開口部
632 画素電極層
632A 画素電極層
632B 画素電極層
632C 画素電極層
632D 画素電極層
670 隔壁
671 開口部
672 EL層
673 画素電極層
674 保護膜
716 ゲート電極層
716A ゲート電極層
716B ゲート電極層
716C ゲート電極層
718 レジストマスク
718A レジストマスク
718B レジストマスク
718C レジストマスク
718D レジストマスク
720 単結晶半導体層
820 ドレイン電極層
820A ドレイン電極層
820B ドレイン電極層
820C ドレイン電極層
820D ドレイン電極層
1200 携帯電話
1201 筐体
1202 筐体
1203 表示部
1204 スピーカ
1205 マイクロフォン
1206 操作キー
1207 ポインティングデバイス
1208 表面カメラ用レンズ
1209 外部接続端子ジャック
1210 イヤホン端子
1211 キーボード
1212 外部メモリスロット
1213 裏面カメラ
1214 ライト
1221 筐体
1222 表示用パネル
1223 主画面
1224 モデム
1225 受信機
1226 リモコン操作機
1227 表示部
1228 サブ画面
1229 スピーカ部
1231 本体
1232 表示部
1250 表示パネル
1251 画素部
1252 信号線駆動回路
1253 走査線駆動回路
1254 チューナ
1255 映像信号増幅回路
1256 映像信号処理回路
1257 コントロール回路
1258 信号分割回路
1259 音声信号増幅回路
1260 音声信号処理回路
1261 制御回路
1262 入力部
1263 スピーカ
1500 マイクロプロセッサ
1501 演算回路
1502 演算回路制御部
1503 命令解析部
1504 制御部
1505 タイミング制御部
1506 レジスタ
1507 レジスタ制御部
1508 バスインターフェース
1509 専用メモリ
1510 メモリインターフェース
1611 RFCPU
1612 アナログ回路部
1613 デジタル回路部
1614 共振回路
1615 整流回路
1616 定電圧回路
1617 リセット回路
1618 発振回路
1619 復調回路
1620 変調回路
1621 RFインターフェース
1622 制御レジスタ
1623 クロックコントローラ
1624 インターフェース
1625 中央処理ユニット
1625 中央処理ユニット
1626 ランダムアクセスメモリ
1627 専用メモリ
1628 アンテナ
1629 容量部
1630 電源管理回路
Claims (1)
- 基板の上方に第1の導電層が設けられる工程が行われ、
前記第1の導電層の上方に第1の絶縁層が設けられる工程が行われ、
前記第1の絶縁層の上方に、第1の領域と第2の領域と第3の領域とを有する第1の半導体層が設けられる工程が行われ、
前記第1の領域の上方に第1のマスクが設けられる工程が行われ、
前記第2の領域と前記第3の領域とに元素が導入される工程が行われ、
前記第1のマスクがエッチングされる工程が行われ、
前記第1の半導体層の上方に第2の導電層が設けられる工程が行われ、
前記第2の導電層の上方に、第4の領域と第5の領域と第6の領域とを有する第2のマスクが設けられる工程が行われ、
前記第2の導電層がエッチングされて第4の導電層となり、前記第1の半導体層がエッチングされて第2の半導体層となり、前記第1の絶縁層がエッチングされて第2の絶縁層となり、前記第1の導電層がエッチングされて第3の導電層となる工程が行われ、
前記第3の導電層がサイドエッチングされて第5の導電層となる工程が行われ、
前記第2のマスクがエッチングされて第3のマスクと第4のマスクとなる工程が行われ、
前記第4の導電層がエッチングされて第6の導電層と第7の導電層となる工程が行われ、
前記第3のマスクと前記第4のマスクとがエッチングされる工程が行われ、
前記元素は、前記第1の半導体層にn型又はp型を付与することができる元素であり、
前記第1の領域は、トランジスタのチャネル形成領域となることができる領域であり、
前記第2の領域は、前記トランジスタのソース領域となることができる領域であり、
前記第3の領域は、前記トランジスタのドレイン領域となることができる領域であり、
前記第4の領域は、前記第5の領域よりも薄く、
前記第4の領域は、前記第6の領域よりも薄く、
前記第4の領域は、前記第1の領域と重なる領域を有し、
前記第5の領域は、前記第2の領域と重なる領域を有し、
前記第6の領域は、前記第3の領域と重なる領域を有し、
前記第5の導電層は、前記トランジスタのゲート電極として機能することができる領域を有し、
前記第6の導電層は、前記第2の領域と重なる領域を有し、
前記第6の導電層は、前記トランジスタのソース電極として機能することができる領域を有し、
前記第7の導電層は、前記第3の領域と重なる領域を有し、
前記第7の導電層は、前記トランジスタのドレイン電極として機能することができる領域を有することを特徴とする半導体装置の作製方法。
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JP5427390B2 (ja) | 2007-10-23 | 2014-02-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5380037B2 (ja) | 2007-10-23 | 2014-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7824939B2 (en) | 2007-10-23 | 2010-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device comprising separated and electrically connected source wiring layers |
KR101448903B1 (ko) | 2007-10-23 | 2014-10-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 및 그의 제작방법 |
EP2232561A4 (en) | 2007-12-03 | 2015-05-06 | Semiconductor Energy Lab | METHOD OF MANUFACTURING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING A DISPLAY ARRANGEMENT |
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2010
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US8143170B2 (en) | 2012-03-27 |
US20100210078A1 (en) | 2010-08-19 |
JP2010212670A (ja) | 2010-09-24 |
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