JP5705426B2 - Soi基板の作製方法及び単結晶シリコン層の作製方法 - Google Patents
Soi基板の作製方法及び単結晶シリコン層の作製方法 Download PDFInfo
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- JP5705426B2 JP5705426B2 JP2009219954A JP2009219954A JP5705426B2 JP 5705426 B2 JP5705426 B2 JP 5705426B2 JP 2009219954 A JP2009219954 A JP 2009219954A JP 2009219954 A JP2009219954 A JP 2009219954A JP 5705426 B2 JP5705426 B2 JP 5705426B2
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- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
- Thin Film Transistor (AREA)
Description
本実施の形態では、半導体基板(SOI基板)の作製方法の一例に関して図面を参照して説明する。具体的には、ベース基板上に単結晶半導体層が設けられた半導体基板を作製する場合について説明する。
本実施の形態では、半導体基板(SOI基板)の作製方法の別の一例に関して図面を参照して説明する。
O2+hν(λ1nm)→O(3P)+O(3P) ・・・ (1)
O(3P)+O2→O3 ・・・ (2)
O3+hν(λ2nm)→O(1D)+O2 ・・・ (3)
O2+hν(λ3nm)→O(1D)+O(3P) ・・・ (4)
O(3P)+O2→O3 ・・・ (5)
O3+hν(λ3nm)→O(1D)+O2 ・・・ (6)
本実施の形態では、開示する発明の別の形態である単結晶半導体層の作製方法の一例に関して図面を参照して説明する。なお、本実施の形態に係る単結晶半導体層の作製方法は、実施の形態1や実施の形態2に係る半導体基板の作製方法を応用するものである。
本実施の形態では、単結晶半導体層の作製方法の別の一例に関して図面を参照して説明する。なお、本実施の形態に係る単結晶半導体層の作製方法は、実施の形態1や実施の形態2に係る半導体基板の作製方法を応用するものである。
本実施の形態では、図5乃至7を参照して、半導体装置の作製方法について説明する。ここでは、半導体装置の一例として複数のトランジスタからなる半導体装置の作製方法について説明することとする。なお、以下において示すトランジスタを組み合わせて用いることで、様々な半導体装置を作製することができる。
本実施の形態では、図8を参照して、光電変換装置(例えば、太陽電池)の作製方法について説明する。なお、以下においては、実施の形態1に示す方法を変形して作製した単結晶半導体層を用いて光電変換装置を作製する場合について説明する。
本実施の形態では、図9を参照して、光電変換装置(例えば、太陽電池)の作製方法について説明する。なお、以下においては、実施の形態3又は実施の形態4に示す方法によって作製した単結晶半導体層を用いて光電変換装置を作製する場合について説明する。
本実施の形態では、上記の実施の形態にて作製した半導体装置、特に表示装置を用いた電子機器について、図10及び図11を参照して説明する。
102 窒素含有層
110 単結晶半導体基板
112 単結晶半導体層
114 絶縁層
120 金属層
500 半導体層
502 半導体膜
504 半導体膜
506 ゲート絶縁膜
508 電極
510 電極
512 不純物領域
514 不純物領域
516 サイドウォール
518 サイドウォール
520 高濃度不純物領域
522 低濃度不純物領域
524 チャネル形成領域
526 高濃度不純物領域
528 低濃度不純物領域
530 チャネル形成領域
532 nチャネル型トランジスタ
534 pチャネル型トランジスタ
536 絶縁膜
538 絶縁膜
540 導電膜
542 導電膜
544 導電膜
546 導電膜
800 ベース基板
802 絶縁層
804 導電層
806 不純物半導体層
808 半導体層
810 不純物半導体層
812 導電層
814 補助電極
816 電極
900 単結晶半導体層
902 不純物領域
904 反射防止膜
906 裏面電極
908 不純物領域
910 受光面電極
1601 筺体
1602 支持台
1603 表示部
1604 スピーカー部
1605 ビデオ入力端子
1611 本体
1612 表示部
1613 受像部
1614 操作キー
1615 外部接続ポート
1616 シャッターボタン
1621 本体
1622 筐体
1623 表示部
1624 キーボード
1625 外部接続ポート
1626 ポインティングデバイス
1631 本体
1632 表示部
1633 スイッチ
1634 操作キー
1635 赤外線ポート
1641 本体
1642 筐体
1643 表示部
1644 表示部
1645 記録媒体読み込み部
1646 操作キー
1647 スピーカー部
1651 本体
1652 表示部
1653 操作キー
1661 本体
1662 表示部
1663 筐体
1664 外部接続ポート
1665 リモコン受信部
1666 受像部
1667 バッテリー
1668 音声入力部
1669 操作キー
1671 本体
1672 筐体
1673 表示部
1674 音声入力部
1675 音声出力部
1676 操作キー
1677 外部接続ポート
1678 アンテナ
1700 携帯電子機器
1701 筐体
1702 筐体
1711 表示部
1712 スピーカー
1713 マイクロフォン
1714 操作キー
1715 ポインティングデバイス
1716 カメラ用レンズ
1717 外部接続端子
1721 キーボード
1722 外部メモリスロット
1723 カメラ用レンズ
1724 ライト
1725 イヤフォン端子
Claims (4)
- 単結晶シリコン基板の表面に、気相エピタキシャル成長法を用いて、基板温度200℃以上300℃以下、高周波電源の出力30W、電力周波数27MHzで、圧縮応力を有する単結晶シリコン層を形成し、
絶縁層を介して前記単結晶シリコン層とベース基板とを貼り合わせ、
前記単結晶シリコン基板と前記単結晶シリコン層との界面において、これらを分離して、前記ベース基板上に前記絶縁層を介して前記単結晶シリコン層を形成し、
前記単結晶シリコン層は、シランと水素との混合ガスを原料ガスとして用いて形成され、
前記原料ガスにおいて、前記シランに対する前記水素の流量比を4倍以上10倍以下とすることを特徴とするSOI基板の作製方法。 - 請求項1において、
前記ベース基板として、ガラス基板を用いることを特徴とするSOI基板の作製方法。 - 単結晶シリコン基板の表面に、気相エピタキシャル成長法を用いて、基板温度200℃以上300℃以下、高周波電源の出力30W、電力周波数27MHzで、圧縮応力を有する単結晶シリコン層を形成し、
前記単結晶シリコン基板及び前記単結晶シリコン層を加熱処理によって所定の温度に保持した状態で、前記単結晶シリコン層上に金属を含有する材料を塗布して金属層を形成し、
前記単結晶シリコン基板、前記単結晶シリコン層及び前記金属層を冷却することにより、前記単結晶シリコン基板と前記単結晶シリコン層との界面において、これらを分離して、前記金属層と前記単結晶シリコン層の積層構造体を形成し、
前記積層構造体から前記金属層を除去し、
前記単結晶シリコン層は、シランと水素との混合ガスを原料ガスとして用いて形成され、
前記原料ガスにおいて、前記シランに対する前記水素の流量比を4倍以上10倍以下とすることを特徴とする単結晶シリコン層の作製方法。 - 請求項3において、
前記金属を含有する材料として、アルミニウム又は銅を含む材料を用いることを特徴とする単結晶シリコン層の作製方法。
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JP5611571B2 (ja) | 2008-11-27 | 2014-10-22 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法及び半導体装置の作製方法 |
JP5755931B2 (ja) * | 2010-04-28 | 2015-07-29 | 株式会社半導体エネルギー研究所 | 半導体膜の作製方法、電極の作製方法、2次電池の作製方法、および太陽電池の作製方法 |
FR2967813B1 (fr) | 2010-11-18 | 2013-10-04 | Soitec Silicon On Insulator | Procédé de réalisation d'une structure a couche métallique enterrée |
US20130247967A1 (en) * | 2012-03-23 | 2013-09-26 | Scott Harrington | Gaseous ozone (o3) treatment for solar cell fabrication |
FR2995444B1 (fr) * | 2012-09-10 | 2016-11-25 | Soitec Silicon On Insulator | Procede de detachement d'une couche |
EP2978028A4 (en) * | 2013-03-19 | 2016-10-26 | Choshu Industry Co Ltd | PHOTOVOLTAIC DEVICE |
JP2019114572A (ja) * | 2016-05-09 | 2019-07-11 | 株式会社カネカ | 積層型光電変換装置の製造方法 |
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JP2994837B2 (ja) | 1992-01-31 | 1999-12-27 | キヤノン株式会社 | 半導体基板の平坦化方法、半導体基板の作製方法、及び半導体基板 |
EP1251556B1 (en) | 1992-01-30 | 2010-03-24 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
JP3085184B2 (ja) | 1996-03-22 | 2000-09-04 | 住友金属工業株式会社 | Soi基板及びその製造方法 |
JPH1093122A (ja) | 1996-09-10 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜太陽電池の製造方法 |
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US6251754B1 (en) | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
JPH1197379A (ja) | 1997-07-25 | 1999-04-09 | Denso Corp | 半導体基板及び半導体基板の製造方法 |
JP3921823B2 (ja) | 1998-07-15 | 2007-05-30 | 信越半導体株式会社 | Soiウェーハの製造方法およびsoiウェーハ |
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FR2817394B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
JP4296726B2 (ja) | 2001-06-29 | 2009-07-15 | 株式会社Sumco | 半導体基板の製造方法及び電界効果型トランジスタの製造方法 |
JP4771510B2 (ja) * | 2004-06-23 | 2011-09-14 | キヤノン株式会社 | 半導体層の製造方法及び基板の製造方法 |
JP2006216896A (ja) * | 2005-02-07 | 2006-08-17 | Canon Inc | 太陽電池の製造方法 |
JP2007123858A (ja) * | 2005-09-29 | 2007-05-17 | Sumitomo Chemical Co Ltd | 3−5族窒化物半導体の製造方法 |
JP2008277477A (ja) * | 2007-04-27 | 2008-11-13 | Fujitsu Microelectronics Ltd | 半導体基板及びその製造方法 |
US7790563B2 (en) * | 2007-07-13 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device and method for manufacturing semiconductor device |
US7795114B2 (en) * | 2007-08-10 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
US7781308B2 (en) * | 2007-12-03 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
CN101504930B (zh) * | 2008-02-06 | 2013-10-16 | 株式会社半导体能源研究所 | Soi衬底的制造方法 |
JP5611571B2 (ja) * | 2008-11-27 | 2014-10-22 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法及び半導体装置の作製方法 |
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