JP5539765B2 - トランジスタの作製方法 - Google Patents
トランジスタの作製方法 Download PDFInfo
- Publication number
- JP5539765B2 JP5539765B2 JP2010068657A JP2010068657A JP5539765B2 JP 5539765 B2 JP5539765 B2 JP 5539765B2 JP 2010068657 A JP2010068657 A JP 2010068657A JP 2010068657 A JP2010068657 A JP 2010068657A JP 5539765 B2 JP5539765 B2 JP 5539765B2
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- film
- etching
- semiconductor film
- resist mask
- layer
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- 239000011159 matrix material Substances 0.000 description 20
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- 229910052760 oxygen Inorganic materials 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Description
本実施の形態では、薄膜トランジスタを含む表示装置の作製方法の一例について、図1乃至図23を参照して説明する。
本実施の形態では、実施の形態1とは異なる薄膜トランジスタの作製方法及び該薄膜トランジスタがマトリクス状に配置されたEL表示装置の作製方法の一例について、図28乃至図45を参照して説明する。本実施の形態では、異なる導電型を有する薄膜トランジスタを同一基板上に形成する例を示す。
本実施の形態は、実施の形態1または実施の形態2にて説明した作製方法により作製した表示装置を表示部として組み込んだ電子機器について図46乃至図48を参照して説明する。このような電子機器としては、例えば、ビデオカメラ若しくはデジタルカメラなどのカメラ、ヘッドマウントディスプレイ(ゴーグル型ディスプレイ)、カーナビゲーション、プロジェクタ、カーステレオ、パーソナルコンピュータ、携帯情報端末(モバイルコンピュータ、携帯電話または電子書籍など)が挙げられる。それらの一例を図46に示す。
101 第1の絶縁膜
102 第1の導電膜
104 第2の絶縁膜
105 第1の半導体膜
106 第2の半導体膜
108 不純物半導体膜
109 バッファ層
110 第2の導電膜
112 第1のレジストマスク
113 エッチングされた第1の導電膜
114 薄膜積層体
115 エッチングされた第1の絶縁膜
116 第1の配線層
116A 第1の配線層
116B 第1の配線層
116C 第1の配線層
116D 第1の配線層
118 第2のレジストマスク
120 第2の配線層
120A 第2の配線層
120B 第2の配線層
120C 第2の配線層
120D 第2の配線層
122 不純物半導体層
122A 不純物半導体層
122B 不純物半導体層
122C 不純物半導体層
122D 不純物半導体層
124 エッチングされた第2の半導体膜
126 第1の保護膜
128 第2の保護膜
130 第1の開口部
131 第2の開口部
132 画素電極層
140 グレートーンマスク
141 基板
142 遮光部
143 回折格子部
145 ハーフトーンマスク
146 基板
147 半透光部
148 遮光部
150 レーザー光
151 角
160A 第3の開口部
160B 第3の開口部
161 第4の開口部
200 画素
201 第1のトランジスタ
202 第2のトランジスタ
203 容量素子
204 発光素子
205 電源線
206 ゲート配線
207 ソース配線
208 共通電極
209 第2の半導体膜
209A 不純物領域
209B 不純物領域
209C 不純物領域
209D 不純物領域
210 第2の導電膜
211 第1のレジストマスク
212 第2のレジストマスク
213 第3のレジストマスク
214 薄膜積層体
216 第1の配線層
216A 第1の配線層
216B 第1の配線層
216C 第1の配線層
218 第4のレジストマスク
218A 第4のレジストマスク
218B 第4のレジストマスク
218C 第4のレジストマスク
218D 第4のレジストマスク
220 第2の配線層
220A 第2の配線層
220B 第2の配線層
220C 第2の配線層
220D 第2の配線層
226 第1の保護膜
228 第2の保護膜
230 第1の開口部
230A 第1の開口部
230B 第1の開口部
231 第2の開口部
232 画素電極層
232A 画素電極層
232B 画素電極層
240 隔壁
241 開口部
242 EL層
243 画素電極層
244 第3の保護膜
300 携帯電話
301 筐体
302 筐体
303 表示部
304 スピーカ
305 マイクロフォン
306 操作キー
307 ポインティングデバイス
308 表面カメラ用レンズ
309 外部接続端子ジャック
310 イヤホン端子
311 キーボード
312 外部メモリスロット
313 裏面カメラ
314 ライト
321 筐体
322 表示用パネル
323 主画面
324 モデム
325 受信機
326 リモコン操作機
327 表示部
328 サブ画面
329 スピーカ部
331 本体
332 表示部
350 表示パネル
351 画素部
352 信号線駆動回路
353 走査線駆動回路
354 チューナ
355 映像信号増幅回路
356 映像信号処理回路
357 コントロール回路
358 信号分割回路
359 音声信号増幅回路
360 音声信号処理回路
361 制御回路
362 入力部
363 スピーカ
Claims (3)
- 第1の導電膜、絶縁膜、第1の半導体膜を順に積層して形成し、
前記第1の半導体膜を結晶化して第2の半導体膜を形成し、
前記第2の半導体膜上に導電性を付与する元素を含む第3の半導体膜、第2の導電膜を順に積層して形成し、
前記第2の導電膜上に凹部を有する第1のレジストマスクを形成し、
前記第1のレジストマスクを用いて、少なくとも前記絶縁膜、前記第2の半導体膜、前記第3の半導体膜及び前記第2の導電膜を有する積層体に第1のエッチングを行い、
前記第1の導電膜にサイドエッチングを伴う第2のエッチングを行って、ゲート配線として機能する領域と、容量配線として機能する領域と、前記積層体の支持部として機能する領域とを有する第1の配線層を形成し、
前記第1のレジストマスクを縮小させることで前記第1のレジストマスクの凹部と重畳する前記第2の導電膜を露出させつつ第2のレジストマスクを形成し、
前記第2のレジストマスクを用いて前記第2の導電膜、前記第3の半導体膜及び前記第2の半導体膜に第3のエッチングを行って第2の配線層、前記導電性を付与する元素を含む半導体層及び上部がエッチングされた前記第2の半導体膜を形成することを特徴とするトランジスタの作製方法。 - 第1の導電膜、絶縁膜、第1の半導体膜を順に積層して形成し、
前記第1の半導体膜を結晶化して第2の半導体膜を形成し、
前記第2の半導体膜上に導電性を付与する元素を含む第3の半導体膜、第2の導電膜を順に積層して形成し、
前記第2の導電膜上に凹部を有する第1のレジストマスクを形成し、
前記第1のレジストマスクを用いて、少なくとも前記絶縁膜、前記第2の半導体膜、前記第3の半導体膜及び前記第2の導電膜を有する積層体に第1のエッチングを行い、
前記第1のレジストマスクを縮小させることで前記第1のレジストマスクの凹部と重畳する前記第2の導電膜を露出させつつ第2のレジストマスクを形成し、
前記第1の導電膜にサイドエッチングを伴う第2のエッチングを行って、ゲート配線として機能する領域と、容量配線として機能する領域と、前記積層体の支持部として機能する領域とを有する第1の配線層を形成し、
前記第2のレジストマスクを用いて前記第2の導電膜、前記第3の半導体膜及び前記第2の半導体膜に第3のエッチングを行って第2の配線層、前記導電性を付与する元素を含む半導体層及び上部がエッチングされた前記第2の半導体膜を形成することを特徴とするトランジスタの作製方法。 - 第1の導電膜、絶縁膜、第1の半導体膜を順に積層して形成し、
前記第1の半導体膜を結晶化して第2の半導体膜を形成し、
前記第2の半導体膜上に第1のレジストマスクを形成し、
前記第1のレジストマスクに覆われていない領域に一導電型を付与する不純物元素を導入し、
前記第1のレジストマスクを除去した後、第2の半導体膜の不純物元素の活性化を行い、
前記第2の半導体膜上に第2の導電膜を形成し、
前記第2の導電膜上に凹部を有する第2のレジストマスクを形成し、
前記第2のレジストマスクを用いて、少なくとも前記絶縁膜、前記第2の半導体膜、前記第2の導電膜を有する積層体に第1のエッチングを行い、
前記第1の導電膜にサイドエッチングを伴う第2のエッチングを行って、ゲート配線として機能する領域と、容量配線として機能する領域と、前記積層体の支持部として機能する領域とを有する第1の配線層を形成し、
前記第2の導電膜上に第3のレジストマスクを形成し、
前記第3のレジストマスクを用いて前記第2の導電膜及び前記第2の半導体膜に第3のエッチングを行って第2の配線層及び半導体層を形成することを特徴とするトランジスタの作製方法。
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KR102373329B1 (ko) * | 2015-04-30 | 2022-03-11 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
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Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122123A (en) * | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
JPS6269680A (ja) * | 1985-09-24 | 1987-03-30 | Seiko Instr & Electronics Ltd | 薄膜トランジスタの製造方法 |
JPS6484669A (en) * | 1987-09-26 | 1989-03-29 | Casio Computer Co Ltd | Thin film transistor |
JPH03161938A (ja) | 1989-11-20 | 1991-07-11 | Seiko Instr Inc | 薄膜トランジスタの製造方法 |
EP0775931B1 (en) * | 1995-11-21 | 2005-10-05 | Samsung Electronics Co., Ltd. | Method of manufacturing a liquid crystal display |
US6493048B1 (en) * | 1998-10-21 | 2002-12-10 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same |
US6469317B1 (en) * | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100325079B1 (ko) * | 1999-12-22 | 2002-03-02 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 및 고투과율 액정표시장치의 제조방법 |
KR100494683B1 (ko) * | 2000-05-31 | 2005-06-13 | 비오이 하이디스 테크놀로지 주식회사 | 4-마스크를 이용한 박막 트랜지스터 액정표시장치의제조시에 사용하는 할프톤 노광 공정용 포토 마스크 |
US7223643B2 (en) * | 2000-08-11 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
TW488080B (en) * | 2001-06-08 | 2002-05-21 | Au Optronics Corp | Method for producing thin film transistor |
JP2003179069A (ja) * | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法 |
JP4152396B2 (ja) * | 2005-04-04 | 2008-09-17 | 廣輝電子股▲ふん▼有限公司 | 薄膜トランジスタアレイの製造方法 |
KR101201017B1 (ko) * | 2005-06-27 | 2012-11-13 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR101225440B1 (ko) * | 2005-06-30 | 2013-01-25 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
US8149346B2 (en) * | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
EP1793266B1 (en) * | 2005-12-05 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration |
CN102331639A (zh) * | 2005-12-05 | 2012-01-25 | 株式会社半导体能源研究所 | 液晶显示器 |
JP2007227440A (ja) | 2006-02-21 | 2007-09-06 | Idemitsu Kosan Co Ltd | Tft基板及びその製造方法 |
TWI322288B (en) * | 2006-03-07 | 2010-03-21 | Au Optronics Corp | Manufacture method of pixel array substrate |
WO2008099528A1 (ja) * | 2007-02-13 | 2008-08-21 | Sharp Kabushiki Kaisha | 表示装置、表示装置の製造方法 |
WO2009072451A1 (en) * | 2007-12-03 | 2009-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and manufacturing method of display device |
US8035107B2 (en) * | 2008-02-26 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
CN101939694B (zh) * | 2008-02-27 | 2014-01-29 | 株式会社半导体能源研究所 | 液晶显示器件及其制造方法以及电子装置 |
US8101442B2 (en) * | 2008-03-05 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing EL display device |
US7749820B2 (en) * | 2008-03-07 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof |
US7989275B2 (en) * | 2008-03-10 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof |
US7883943B2 (en) * | 2008-03-11 | 2011-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor and method for manufacturing display device |
US7985605B2 (en) * | 2008-04-17 | 2011-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
US7790483B2 (en) * | 2008-06-17 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof, and display device and manufacturing method thereof |
US8207026B2 (en) * | 2009-01-28 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and manufacturing method of display device |
JP5503995B2 (ja) * | 2009-02-13 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7989234B2 (en) * | 2009-02-16 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor and method for manufacturing display device |
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