WO2009063606A1 - 薄膜トランジスタ、薄膜トランジスタの作製方法、及び表示装置 - Google Patents

薄膜トランジスタ、薄膜トランジスタの作製方法、及び表示装置 Download PDF

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Publication number
WO2009063606A1
WO2009063606A1 PCT/JP2008/003245 JP2008003245W WO2009063606A1 WO 2009063606 A1 WO2009063606 A1 WO 2009063606A1 JP 2008003245 W JP2008003245 W JP 2008003245W WO 2009063606 A1 WO2009063606 A1 WO 2009063606A1
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
contact
microcrystalline silicon
display device
Prior art date
Application number
PCT/JP2008/003245
Other languages
English (en)
French (fr)
Inventor
Masao Moriguchi
Yuichi Saito
Hidayat Kisdarjono
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to CN200880116108.XA priority Critical patent/CN101861642B/zh
Priority to US12/743,059 priority patent/US20100237355A1/en
Publication of WO2009063606A1 publication Critical patent/WO2009063606A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

　オン電流が大きく、かつ、オフ電流が抑えられた薄膜トランジスタを、製造効率よく提供する。 　本発明による薄膜トランジスタは、ゲート電極と、微結晶シリコンを含み、基板面に平行な上面及び下面と、上面と下面とに挟まれた端面とを有する微結晶シリコン層と、それぞれが微結晶シリコン層に接するように形成された、不純物を含む第１及び第２コンタクト層と、第１コンタクト層に接するように形成されたソース電極と、第２コンタクト層に接するように形成されたドレイン電極とを備え、第１及び第２コンタクト層の少なくとも一方が、微結晶シリコン層の上面及び下面に接することなく端面のみに接している。
PCT/JP2008/003245 2007-11-15 2008-11-10 薄膜トランジスタ、薄膜トランジスタの作製方法、及び表示装置 WO2009063606A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880116108.XA CN101861642B (zh) 2007-11-15 2008-11-10 薄膜晶体管、薄膜晶体管的制作方法以及显示装置
US12/743,059 US20100237355A1 (en) 2007-11-15 2008-11-10 Thin film transistor, method for manufacturing thin film transistor, and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99639407P 2007-11-15 2007-11-15
US60/996,394 2007-11-15

Publications (1)

Publication Number Publication Date
WO2009063606A1 true WO2009063606A1 (ja) 2009-05-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003245 WO2009063606A1 (ja) 2007-11-15 2008-11-10 薄膜トランジスタ、薄膜トランジスタの作製方法、及び表示装置

Country Status (3)

Country Link
US (1) US20100237355A1 (ja)
CN (1) CN101861642B (ja)
WO (1) WO2009063606A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011108836A (ja) * 2009-11-17 2011-06-02 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
WO2013118233A1 (ja) * 2012-02-06 2013-08-15 パナソニック株式会社 薄膜半導体装置の製造方法及び薄膜半導体装置
WO2013118234A1 (ja) * 2012-02-06 2013-08-15 パナソニック株式会社 薄膜半導体装置の製造方法及び薄膜半導体装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101380876B1 (ko) * 2008-01-22 2014-04-10 삼성디스플레이 주식회사 금속 배선, 그 형성 방법 및 이를 이용한 표시 장치
CN102184893A (zh) * 2011-04-18 2011-09-14 上海大学 一种基于微晶硅的tft有源矩阵制造工艺
CN102646714A (zh) * 2011-05-16 2012-08-22 京东方科技集团股份有限公司 一种薄膜晶体管、阵列基板及其制备方法
CN103474474B (zh) * 2013-09-16 2016-08-17 北京京东方光电科技有限公司 Tft及其制作方法、阵列基板及其制作方法、x射线探测器
JP6611521B2 (ja) * 2015-08-25 2019-11-27 三菱電機株式会社 薄膜トランジスタ及びアレイ基板
TWI658587B (zh) * 2018-01-25 2019-05-01 友達光電股份有限公司 顯示裝置之薄膜電晶體及其形成方法
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
CN113314615A (zh) * 2021-06-04 2021-08-27 华南理工大学 一种薄膜晶体管以及制备方法

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JPS61171166A (ja) * 1985-01-24 1986-08-01 Sharp Corp 薄膜トランジスタおよびその製造法
JPH0575125A (ja) * 1991-09-12 1993-03-26 Toshiba Corp 薄膜トランジスタ
JPH05218083A (ja) * 1991-08-27 1993-08-27 Gold Star Co Ltd 薄膜トランジスタの製造方法
JPH06181313A (ja) * 1992-12-14 1994-06-28 Hitachi Ltd 薄膜トランジスタとその製法
JPH08228008A (ja) * 1994-07-13 1996-09-03 Hyundai Electron Ind Co Ltd 薄膜トランジスタ及びその製造方法
JPH1117188A (ja) * 1997-06-23 1999-01-22 Sharp Corp アクティブマトリクス基板
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JP2005243951A (ja) * 2004-02-26 2005-09-08 Semiconductor Energy Lab Co Ltd 半導体膜の成膜方法

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US5053347A (en) * 1989-08-03 1991-10-01 Industrial Technology Research Institute Amorphous silicon thin film transistor with a depletion gate
EP0592227A3 (en) * 1992-10-07 1995-01-11 Sharp Kk Manufacture of a thin film transistor and production of a liquid crystal display device.
KR100192593B1 (ko) * 1996-02-21 1999-07-01 윤종용 폴리 실리콘 박막 트랜지스터의 제조방법
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JPS61171166A (ja) * 1985-01-24 1986-08-01 Sharp Corp 薄膜トランジスタおよびその製造法
JPH05218083A (ja) * 1991-08-27 1993-08-27 Gold Star Co Ltd 薄膜トランジスタの製造方法
JPH0575125A (ja) * 1991-09-12 1993-03-26 Toshiba Corp 薄膜トランジスタ
JPH06181313A (ja) * 1992-12-14 1994-06-28 Hitachi Ltd 薄膜トランジスタとその製法
JPH08228008A (ja) * 1994-07-13 1996-09-03 Hyundai Electron Ind Co Ltd 薄膜トランジスタ及びその製造方法
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011108836A (ja) * 2009-11-17 2011-06-02 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法
WO2013118233A1 (ja) * 2012-02-06 2013-08-15 パナソニック株式会社 薄膜半導体装置の製造方法及び薄膜半導体装置
WO2013118234A1 (ja) * 2012-02-06 2013-08-15 パナソニック株式会社 薄膜半導体装置の製造方法及び薄膜半導体装置
US9035385B2 (en) 2012-02-06 2015-05-19 Joled Inc. Method for fabricating thin-film semiconductor device and thin-film semiconductor device
US9209309B2 (en) 2012-02-06 2015-12-08 Joled Inc. Method for fabricating thin-film semiconductor device and thin-film semiconductor device

Also Published As

Publication number Publication date
CN101861642B (zh) 2013-04-17
US20100237355A1 (en) 2010-09-23
CN101861642A (zh) 2010-10-13

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