JP2009158947A5 - - Google Patents

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Publication number
JP2009158947A5
JP2009158947A5 JP2008307050A JP2008307050A JP2009158947A5 JP 2009158947 A5 JP2009158947 A5 JP 2009158947A5 JP 2008307050 A JP2008307050 A JP 2008307050A JP 2008307050 A JP2008307050 A JP 2008307050A JP 2009158947 A5 JP2009158947 A5 JP 2009158947A5
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JP
Japan
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semiconductor film
manufacturing
donor
impurity element
film
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JP2008307050A
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Japanese (ja)
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JP5101471B2 (ja
JP2009158947A (ja
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Priority claimed from JP2008307050A external-priority patent/JP5101471B2/ja
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Publication of JP2009158947A5 publication Critical patent/JP2009158947A5/ja
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Publication of JP5101471B2 publication Critical patent/JP5101471B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008307050A 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法 Expired - Fee Related JP5101471B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008307050A JP5101471B2 (ja) 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007312670 2007-12-03
JP2007312670 2007-12-03
JP2008307050A JP5101471B2 (ja) 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法

Publications (3)

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JP2009158947A JP2009158947A (ja) 2009-07-16
JP2009158947A5 true JP2009158947A5 (enExample) 2011-12-22
JP5101471B2 JP5101471B2 (ja) 2012-12-19

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JP2008307050A Expired - Fee Related JP5101471B2 (ja) 2007-12-03 2008-12-02 微結晶半導体膜及び薄膜トランジスタの作製方法

Country Status (3)

Country Link
US (1) US8187956B2 (enExample)
JP (1) JP5101471B2 (enExample)
KR (1) KR101534099B1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8591650B2 (en) * 2007-12-03 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
US8030655B2 (en) * 2007-12-03 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor
JP5527966B2 (ja) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
TWI371223B (en) * 2008-02-20 2012-08-21 Chimei Innolux Corp Organic light emitting display device and fabrications thereof and electronic device
US7989325B2 (en) * 2009-01-13 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
KR101739154B1 (ko) * 2009-07-17 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US8258025B2 (en) * 2009-08-07 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and thin film transistor
JP5466933B2 (ja) * 2009-12-03 2014-04-09 株式会社ジャパンディスプレイ 薄膜トランジスタおよびその製造方法
WO2011080957A1 (ja) * 2009-12-29 2011-07-07 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示装置
US8383434B2 (en) * 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
JP5709579B2 (ja) * 2010-03-02 2015-04-30 株式会社半導体エネルギー研究所 微結晶半導体膜の作製方法
JP2011210940A (ja) * 2010-03-30 2011-10-20 Casio Computer Co Ltd 薄膜トランジスタ、薄膜トランジスタの製造方法及び発光装置
JP5933188B2 (ja) * 2010-05-14 2016-06-08 株式会社半導体エネルギー研究所 微結晶シリコン膜及びその作製方法、並びに半導体装置
JP5785770B2 (ja) * 2010-05-14 2015-09-30 株式会社半導体エネルギー研究所 微結晶半導体膜の作製方法、及び半導体装置の作製方法
US20130087802A1 (en) * 2010-07-07 2013-04-11 Akihiko Kohno Thin film transistor, fabrication method therefor, and display device
CN102386072B (zh) * 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
US8450158B2 (en) * 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
WO2012086481A1 (ja) * 2010-12-21 2012-06-28 シャープ株式会社 半導体装置およびその製造方法
US9111775B2 (en) 2011-01-28 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Silicon structure and manufacturing methods thereof and of capacitor including silicon structure
JP5832780B2 (ja) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 半導体装置の製造方法
US11387305B2 (en) * 2018-08-10 2022-07-12 Boe Technology Group Co., Ltd. Display substrate, display panel, display apparatus, and method of fabricating display substrate

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2968866A (en) * 1958-05-21 1961-01-24 Sylvania Electric Prod Method of producing thin wafers of semiconductor materials
US4251287A (en) * 1979-10-01 1981-02-17 The University Of Delaware Amorphous semiconductor solar cell
JPS5685792A (en) 1979-12-14 1981-07-13 Citizen Watch Co Ltd Liquid crystal display unit
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
USRE34658E (en) 1980-06-30 1994-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device of non-single crystal-structure
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS6262073A (ja) 1985-09-11 1987-03-18 Ishikawajima Harima Heavy Ind Co Ltd ポペツト弁の温度制御装置
US4859553A (en) * 1987-05-04 1989-08-22 Xerox Corporation Imaging members with plasma deposited silicon oxides
JPH0253941A (ja) 1988-08-17 1990-02-22 Tsudakoma Corp 織機の運転装置
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US5843225A (en) 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6183816B1 (en) 1993-07-20 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the coating
TW303526B (enExample) 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
JP3907726B2 (ja) 1995-12-09 2007-04-18 株式会社半導体エネルギー研究所 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法
KR100257158B1 (ko) 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
JP2000277439A (ja) 1999-03-25 2000-10-06 Kanegafuchi Chem Ind Co Ltd 結晶質シリコン系薄膜のプラズマｃｖｄ方法およびシリコン系薄膜光電変換装置の製造方法
US6346730B1 (en) 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
JP3911971B2 (ja) 1999-09-08 2007-05-09 松下電器産業株式会社 シリコン薄膜、薄膜トランジスタおよびシリコン薄膜の製造方法
US6803585B2 (en) 2000-01-03 2004-10-12 Yuri Glukhoy Electron-cyclotron resonance type ion beam source for ion implanter
GB0017471D0 (en) 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
JP2002206168A (ja) 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
JP2004014958A (ja) 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
EP1445802A1 (en) 2003-02-06 2004-08-11 Centre National De La Recherche Scientifique (Cnrs) Transistor for active matrix display, a display unit comprising the said transistor and a method for producing said transistor
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP2005050905A (ja) 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
KR100752214B1 (ko) * 2003-10-16 2007-08-28 엘지.필립스 엘시디 주식회사 반투과형 액정표시소자의 제조방법
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP4578826B2 (ja) * 2004-02-26 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20050205880A1 (en) * 2004-03-19 2005-09-22 Aya Anzai Display device and electronic appliance
JP2005317855A (ja) * 2004-04-30 2005-11-10 Canon Inc 微結晶シリコン膜の形成方法及び光起電力素子
JP5036173B2 (ja) * 2004-11-26 2012-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7502040B2 (en) * 2004-12-06 2009-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof and electronic appliance
JP5013393B2 (ja) 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
JP4597792B2 (ja) 2005-06-27 2010-12-15 東京エレクトロン株式会社 処理ガス供給構造およびプラズマ処理装置
WO2007000469A1 (en) * 2005-06-29 2007-01-04 Oc Oerlikon Balzers Ag Method for manufacturing flat substrates
JP4777717B2 (ja) 2005-08-10 2011-09-21 東京エレクトロン株式会社 成膜方法、プラズマ処理装置および記録媒体
JP5331389B2 (ja) 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
US8030147B2 (en) 2007-09-14 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and display device including the thin film transistor
US8591650B2 (en) 2007-12-03 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device

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