TWI521712B - 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法 - Google Patents
薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法 Download PDFInfo
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- TWI521712B TWI521712B TW097145744A TW97145744A TWI521712B TW I521712 B TWI521712 B TW I521712B TW 097145744 A TW097145744 A TW 097145744A TW 97145744 A TW97145744 A TW 97145744A TW I521712 B TWI521712 B TW I521712B
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- Prior art keywords
- film
- thin film
- ruthenium
- film transistor
- gate insulating
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007312797 | 2007-12-03 |
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| Publication Number | Publication Date |
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| TW200947708A TW200947708A (en) | 2009-11-16 |
| TWI521712B true TWI521712B (zh) | 2016-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW097145744A TWI521712B (zh) | 2007-12-03 | 2008-11-26 | 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法 |
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| US (1) | US20090140251A1 (enExample) |
| JP (1) | JP5395414B2 (enExample) |
| KR (1) | KR101551300B1 (enExample) |
| CN (1) | CN101452961B (enExample) |
| TW (1) | TWI521712B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5527966B2 (ja) | 2007-12-28 | 2014-06-25 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ |
| KR101628254B1 (ko) * | 2009-09-21 | 2016-06-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
| KR102771839B1 (ko) * | 2009-11-13 | 2025-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US8395156B2 (en) * | 2009-11-24 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| US8476744B2 (en) * | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
| WO2011141946A1 (ja) * | 2010-05-10 | 2011-11-17 | パナソニック株式会社 | 薄膜トランジスタ装置及びその製造方法 |
| US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2474643B1 (en) * | 2011-01-11 | 2016-01-06 | Imec | Method for direct deposition of a germanium layer |
| KR101973207B1 (ko) * | 2011-06-23 | 2019-04-29 | 삼성디스플레이 주식회사 | 금속 산화물이 함유된 양극 및 상기 양극을 포함하는 유기발광소자 |
| EP2626917B1 (en) * | 2012-02-10 | 2017-09-27 | IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | A CMOS-compatible germanium tunable Laser |
| US20130280891A1 (en) * | 2012-04-20 | 2013-10-24 | Yihwan Kim | Method and apparatus for germanium tin alloy formation by thermal cvd |
| JP6199583B2 (ja) | 2012-04-27 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102172972B1 (ko) | 2014-02-26 | 2020-11-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
| JP2018006412A (ja) * | 2016-06-28 | 2018-01-11 | 学校法人東北学院 | 半導体装置 |
| US11737954B1 (en) | 2020-10-06 | 2023-08-29 | Verily Life Sciences Llc | Network-connected containers having medication stored therein |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56122123A (en) * | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
| US5514879A (en) * | 1990-11-20 | 1996-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
| KR950013784B1 (ko) * | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
| US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| JPH05175503A (ja) * | 1991-10-23 | 1993-07-13 | Kyocera Corp | 薄膜トランジスタおよびその製造方法 |
| JPH05267662A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 相補型薄膜半導体装置およびそれを用いた画像情報処理装置 |
| US5371380A (en) * | 1992-04-15 | 1994-12-06 | Canon Kabushiki Kaisha | Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less |
| US5648293A (en) * | 1993-07-22 | 1997-07-15 | Nec Corporation | Method of growing an amorphous silicon film |
| KR100226761B1 (ko) * | 1996-07-31 | 1999-10-15 | 김영환 | 반도체 소자의 제조방법 |
| KR100269518B1 (ko) * | 1997-12-29 | 2000-10-16 | 구본준 | 박막트랜지스터 제조방법 |
| JP4472064B2 (ja) * | 1998-08-31 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| KR100399556B1 (ko) * | 1998-12-14 | 2003-10-17 | 엘지.필립스 엘시디 주식회사 | 배선, 이를 사용한 박막 트랜지스터 기판, 및 그제조방법과 액정표시장치 |
| US6104042A (en) * | 1999-06-10 | 2000-08-15 | Chi Mei Optoelectronics Corp. | Thin film transistor with a multi-metal structure a method of manufacturing the same |
| JP3356748B2 (ja) * | 2000-01-21 | 2002-12-16 | 鹿児島日本電気株式会社 | 薄膜トランジスタの製造方法 |
| CN1423841A (zh) * | 2000-12-21 | 2003-06-11 | 皇家菲利浦电子有限公司 | 薄膜晶体管 |
| US7071037B2 (en) * | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP4267266B2 (ja) * | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2005005509A (ja) * | 2003-06-12 | 2005-01-06 | Canon Inc | 薄膜トランジスタ及びその製造方法 |
| TWI368774B (en) * | 2003-07-14 | 2012-07-21 | Semiconductor Energy Lab | Light-emitting device |
| TWI336921B (en) * | 2003-07-18 | 2011-02-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| KR101029944B1 (ko) * | 2003-12-30 | 2011-04-19 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판의 제조 방법 |
| JP4557755B2 (ja) * | 2004-03-11 | 2010-10-06 | キヤノン株式会社 | 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法 |
| JP4200458B2 (ja) * | 2006-05-10 | 2008-12-24 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
| US9176353B2 (en) * | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8921858B2 (en) * | 2007-06-29 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| TWI575293B (zh) * | 2007-07-20 | 2017-03-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP2009049384A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8330887B2 (en) * | 2007-07-27 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US8101444B2 (en) * | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101455304B1 (ko) * | 2007-10-05 | 2014-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막트랜지스터, 및 박막트랜지스터를 가지는 표시장치, 및그들의 제작방법 |
| JP2009105390A (ja) * | 2007-10-05 | 2009-05-14 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US8030655B2 (en) * | 2007-12-03 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device having thin film transistor |
| US8187956B2 (en) * | 2007-12-03 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film |
| JP5527966B2 (ja) * | 2007-12-28 | 2014-06-25 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ |
-
2008
- 2008-11-26 TW TW097145744A patent/TWI521712B/zh not_active IP Right Cessation
- 2008-11-28 KR KR1020080119869A patent/KR101551300B1/ko not_active Expired - Fee Related
- 2008-12-01 US US12/325,620 patent/US20090140251A1/en not_active Abandoned
- 2008-12-02 JP JP2008307037A patent/JP5395414B2/ja not_active Expired - Fee Related
- 2008-12-03 CN CN200810179744.9A patent/CN101452961B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101551300B1 (ko) | 2015-09-08 |
| KR20090057907A (ko) | 2009-06-08 |
| JP5395414B2 (ja) | 2014-01-22 |
| CN101452961B (zh) | 2016-08-24 |
| JP2009158945A (ja) | 2009-07-16 |
| US20090140251A1 (en) | 2009-06-04 |
| CN101452961A (zh) | 2009-06-10 |
| TW200947708A (en) | 2009-11-16 |
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