CN105572990B - 阵列基板及其制造方法、液晶显示面板 - Google Patents

阵列基板及其制造方法、液晶显示面板 Download PDF

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CN105572990B
CN105572990B CN201510966736.9A CN201510966736A CN105572990B CN 105572990 B CN105572990 B CN 105572990B CN 201510966736 A CN201510966736 A CN 201510966736A CN 105572990 B CN105572990 B CN 105572990B
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metal layer
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liquid crystal
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CN105572990A (zh
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王威
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Wuhan China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种阵列基板的制造方法，采用磁控溅射法在氧气浓度高于21％的氛围中以300～400℃的温度进行热退火处理，从而制得沟道的保护层，其中该保护层的材质包括Al2O3。本发明还提供一种由该方法制得的阵列基板以及具有该阵列基板的液晶显示面板。本发明能够避免氢原子等杂质掺入沟道中，制得的保护层膜质较高，从而确保沟道的电学性能，且工艺简单易实现，有利于产业化。

Description

阵列基板及其制造方法、液晶显示面板
技术领域
本发明涉及液晶显示技术领域，具体而言涉及一种阵列基板及其制造方法、以及具有该阵列基板的液晶显示面板。
背景技术
随着液晶显示器(Liquid Crystal Display，LCD)尺寸和清晰度的增加，具有较大电子迁移率的TFT(Thin Film Transistor，薄膜晶体管)结构已崭露头角并表现出巨大的市场应用前景。当前，业界普遍采用IGZO(Indium Gallium Zinc Oxide,铟镓锌氧化物)制备TFT的非晶态氧化半导体层(Amorphous Oxide Semiconductor,AOS，又称半导体图案层或IGZO沟道)，由于IGZO是一种对水和氧极其敏感的材料，LCD工作环境中的水分子和氧分子极易对其电学性能产生影响，因此为了提高TFT的沟道的电学稳定性需要在沟道上形成一保护层。
现有技术中保护层的材质一般为氧化硅SiO2、氮化硅Si3N4，且通常采用化学气相沉积(Chemical vapor deposition，CVD)、原子层外延(Atom Layer Deposition,ALD)以及磁控溅射(Sputter)等方式制得。然而，化学气相沉积方式容易使氢原子等杂质掺入到沟道中，不仅会损伤沟道，而且影响沟道的电学性能；采用磁控溅射方式制得的保护层的质量较差，对沟道的保护的稳定性较差；原子层外延方式的工艺复杂，耗时较长，因此不利于产业化。
发明内容
有鉴于此，本发明提供一种阵列基板及其制造方法、液晶显示面板，能够避免氢原子等杂质掺入沟道中，制得的保护层膜质较高，确保沟道的电学性能，且工艺简单易实现，有利于产业化。
本发明实施例提供的一种阵列基板的制造方法，包括：在衬底基材上依次形成第一金属层、绝缘层和半导体图案层；在绝缘层和半导体图案层上形成第二金属层，其中第二金属层与半导体图案层对应的区域的表面为铝Al层，且Al层采用磁控溅射法形成；在氧气浓度高于21％的氛围中以300～400℃的温度进行热退火处理，使得Al层发生氧化反应形成Al2O3层；对包含所述Al2O3层的第二金属层进行刻蚀，以在半导体图案层上保留具有预定尺寸的保护层；在Al2O3层上形成第三金属层，第三金属层形成有凹槽，且凹槽暴露其对应区域的Al2O3层。
其中，第一金属层为阵列基板的薄膜晶体管的栅极，第二金属层包括薄膜晶体管的源极和漏极，源极和漏极位于凹槽的两侧。
其中，所述方法还包括：在被暴露的Al2O3层和第三金属层上形成钝化层。
其中，采用化学气相沉积、原子层外延、涂覆、溅射以及蒸镀中的任意组合方式在被暴露的Al2O3层和第三金属层上形成钝化层。
其中，钝化层的材质和第二金属层的材质不相同。
其中，钝化层的材质和第二金属层的材质相同。
本发明实施例提供的一种阵列基板，包括：衬底基材；依次形成于衬底基材上的第一金属层、绝缘层和半导体图案层；保护层，形成于半导体图案层上，保护层的表面为Al2O3层，Al2O3层由采用磁控溅射法形成的Al层在氧气浓度高于21％的氛围中以300～400℃的温度进行热退火处理制得；第三金属层，形成于Al2O3层上，第三金属层形成有凹槽，且凹槽暴露其对应区域的Al2O3层。
其中，第一金属层为阵列基板的薄膜晶体管的栅极，第二金属层包括薄膜晶体管的源极和漏极，源极和漏极位于凹槽的两侧。
本发明实施例提供的一种液晶显示面板，包括上述阵列基板、与所述阵列基板相对间隔设置的彩膜基板以及夹设于两者之间的液晶。
本发明实施例的阵列基板及其制造方法、液晶显示面板，采用磁控溅射方式在氧气浓度高于21％的氛围中以300～400℃的温度进行热退火处理，以此制得沟道的保护层，且该保护层的材质包括Al2O3，相比较于化学气相沉积方式，能够避免氢原子等杂质掺入沟道中，从而避免损伤沟道，确保沟道的电学性能；并且，氧化反应制得的Al2O3保护层膜质较高，具有较高的致密度，可进一步确保沟道的电学性能；另外，磁控溅射方式和热退火处理的工艺简单，有利于产业化。
附图说明
图1是本发明的阵列基板的制造方法一实施例的流程示意图；
图2是图1所示方法中在衬底基材上依次形成第一金属层、绝缘层和半导体图案层的示意图；
图3是图1所示方法中在绝缘层和半导体图案层上形成第二金属层以及Al2O3层的示意图；
图4是图1所示方法中在Al2O3层上形成第三金属层的示意图；
图5是本发明的液晶显示面板一实施例的结构剖视图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明所提供的示例性的实施例的技术方案进行清楚、完整地描述。
图1是本发明的阵列基板的制造方法一实施例的流程示意图。所述方法用于形成TFT的IGZO沟道的保护层，该保护层的首要作用是防止水分子和氧分子进入并接触IGZO沟道以确保IGZO沟道的电学性能，因此该保护层也可称为水氧阻隔层或刻蚀阻挡(Etch StopLayer,ESL)层。结合图1～图5所示，所述方法包括：
S11：在衬底基材上依次形成第一金属层、绝缘层和半导体图案层。
参阅图2所示，衬底基材21用于形成阵列基板，因此所述衬底基材21可以为玻璃基材、透明塑料基材或可挠式基材。
本实施例可采用例如化学气相沉积、真空蒸镀、等离子化学气相沉积、溅射或低压化学气相沉积等方法在衬底基材21上形成第一金属层22，即形成具有预定图案的TFT的栅极，由于后续需要形成TFT的源极和漏极，因此进一步在包括第一金属层22的衬底基材21上形成绝缘层23，即栅极绝缘层(Gate Insulation Layer，GI)。
在绝缘层23上形成的半导体图案层24为TFT的非晶态氧化半导体层且具有预定图案。该半导体图案层24的材质包括但不限于IGZO、ITZO(InSnZnO)。本发明实施例可以利用包括但不限于具有磷酸、硝酸、醋酸以及去离子水的蚀刻液对形成于绝缘层23上的一整片半导体图案层24进行蚀刻，从而得到具有预定图案的半导体图案层24，当然其他实施例也可以采用干法蚀刻，但并不限于此。
S12：在绝缘层和半导体图案层上形成第二金属层，第二金属层与半导体图案层对应的区域的表面为Al层，Al层采用磁控溅射法形成。
参阅图3所示，第二金属层25用于制得本发明实施例的IGZO沟道的保护层，该第二金属层25优选为采用磁控溅射法在300～400℃的温度下形成的Al层。当然，其他实施例的第二金属层25可以仅在表面设置预定厚度的Al层，或者仅在对应于半导体图案层24的表面设置预定厚度的Al层，而在Al层的下方采用预定方式形成一层衬底，本发明对于该衬底的材质并不予以限制。
磁控溅射方式形成Al层的过程中，不会产生氢原子等杂质，因此相比较于化学气相沉积方式或者等离子增强化学气相沉积(Plasma Enhanced Chemical vapordeposition，PECVD)方式，本发明实施例不仅能够减少对IGZO沟道的损伤，而且可避免氢原子等杂质掺入半导体图案层24(IGZO沟道)，从而确保IGZO沟道的电学性能。
并且，磁控溅射方式的工艺简单易实现，与化学气相沉积方式以及或者等离子增强化学气相沉积相比效率高，有利于产业化。
S13：在氧气浓度高于21％的氛围中以300～400℃的温度进行热退火处理，使得Al层发生氧化反应以形成Al2O3层。
继续参阅图3所示，Al层(第二金属层25)中的Al原子在氧气O2浓度高于21％的富氧氛围中发生氧化反应，能够最大程度的生成Al2O3层26，同时300～400℃的温度能够促使所述氧化反应以使Al层中尽可能多的Al原子被氧化，从而最大程度的保证所形成的Al2O3层26的致密性，使其膜质较高，进一步确保IGZO沟道的电学性能。
在本发明实施例中，在富氧氛围中进行热退火处理可同时具有三个作用：一是，降低IGZO主动层(IGZO沟道)的缺陷态密度(主要是降低氧空位浓度)，获得良好的主动层电学特性；二是，一定程度上修复在第二金属层25沉积和图案化过程中，磁控溅射工艺和刻蚀工艺对主动层的沟道造成的损伤；三是，将Al层氧化为膜质较高的Al2O3层26，形成沟道保护层。
S14：对包含Al2O3层的第二金属层进行刻蚀，以在半导体图案层上保留具有预定尺寸的保护层。
继续参阅图3所示，本发明实施例可以采用包括但不限于湿法刻蚀、干法刻蚀等方式对Al2O3层26进行刻蚀。该预定尺寸为TFT的IGZO沟道的尺寸，该预定尺寸的保护层(图示为Al2O3层26)即为IGZO沟道的保护层。
S15：在Al2O3层上形成第三金属层，第三金属层形成有凹槽，且凹槽暴露其对应区域的Al2O3层。
参阅图4所示，第三金属层27为TFT的源漏电极层，包括源极271和漏极272，源极271和漏极272位于所述保护层的两侧。
进一步地，本发明实施例的制造方法还包括：在被暴露的Al2O3层(预定尺寸的Al2O3层26)和第三金属层27上形成钝化层28。其中，可以采用化学气相沉积、原子层外延、涂覆、溅射以及蒸镀中的任意组合方式在被暴露的Al2O3层26和第三金属层27上形成钝化层28。
本发明实施例还提供一种采用上述方法制得的具有图4所示结构的阵列基板，该阵列基板的其他结构的制造方法可参阅现有技术。
本发明实施例还提供一种液晶显示面板，如图5所示，该液晶显示面板50包括上述阵列基板10、与阵列基板10相对间隔设置的彩膜基板51以及夹设于阵列基板10和彩膜基板51之间的液晶52。
应理解，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (6)

1.一种阵列基板的制造方法，其特征在于，所述方法包括：
在衬底基材上依次形成第一金属层、绝缘层和半导体图案层；其中，所述第一金属层为所述阵列基板的薄膜晶体管的栅极；
在所述绝缘层和所述半导体图案层上形成第二金属层，其中所述第二金属层与所述半导体图案层对应的区域的表面为Al层，且所述Al层采用磁控溅射法形成；
在氧气浓度高于21％的氛围中以300～400℃的温度进行热退火处理，使得所述Al层发生氧化反应形成Al2O3层；
对包含所述Al2O3层的第二金属层进行刻蚀，以在所述半导体图案层上保留具有预定尺寸的保护层；
在所述绝缘层、所述半导体层以及所述Al2O3层上形成第三金属层，所述第三金属层形成有凹槽，且所述凹槽暴露其对应区域的Al2O3层，其中所述第三金属层包括所述薄膜晶体管的源极和漏极，所述源极和所述漏极位于所述保护层的两侧，并与所述绝缘层和所述半导体层接触；
其中，所述保护层还用于阻隔水分子和氧分子。
2.根据权利要求1所述的方法，其特征在于，所述方法还包括：
在被暴露的所述Al2O3层和所述第三金属层上形成钝化层。
3.根据权利要求2所述的方法，其特征在于，采用化学气相沉积、原子层外延、涂覆、溅射以及蒸镀中的任意组合方式在被暴露的所述Al2O3层和所述第三金属层上形成所述钝化层。
4.根据权利要求3所述的方法，其特征在于，所述钝化层的材质和所述第二金属层的材质不相同。
5.一种阵列基板，其特征在于，所述阵列基板包括：
衬底基材；
依次设置于所述衬底基材上的第一金属层、绝缘层和半导体图案层；其中，所述第一金属层为所述阵列基板的薄膜晶体管的栅极；
保护层，设置于所述半导体图案层上，所述保护层的表面为Al2O3层，所述Al2O3层由采用磁控溅射法形成的Al层在氧气浓度高于21％的氛围中以300～400℃的温度进行热退火处理制得；
第三金属层，设置于所述绝缘层、所述半导体层以及所述Al2O3层上，所述第三金属层形成有凹槽，且所述凹槽暴露其对应区域的Al2O3层；其中，所述第三金属层包括所述薄膜晶体管的源极和漏极，所述源极和所述漏极位于所述保护层的两侧，并与所述绝缘层和所述半导体层接触；
其中，所述保护层用于阻隔水分子和氧分子。
6.一种液晶显示面板，其特征在于，所述液晶显示面板包括权利要求5所述的阵列基板、与所述阵列基板相对间隔设置的彩膜基板以及夹设于两者之间的液晶。
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